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ics83947-147i

LVCMOS/LVTTL F ANOUT B UFFER

G ENERAL D ESCRIPTION

The ICS83947I-147 is a low skew, 1-to-9 LVCMOS/LVTTL Fanout Buffer and a member of the

HiPerClockS? family of High Performance Clock Solutions from ICS. The low impedance LVCMOS/LVTTL outputs are designed to drive 50? series

or parallel terminated transmission lines. The effective fanout can be increased from 9 to 18 by utilizing the ability of the outputs to drive two series terminated lines.

Guaranteed output and part-to-part skew characteristics make the ICS83947I-147 ideal for high performance, single ended appli-cations that also require a limited output voltage.

B LOCK D IAGRAM

P IN A SSIGNMENT

F EATURES

?9 LVCMOS/LVTTL outputs

?Selectable CLK0 and CLK1 can accept the following input levels: LVCMOS and LVTTL ?Maximum output frequency: 350MHz ?Output skew: 150ps (maximum)?Part-to-part skew: 500ps (maximum)?Full 3.3V or 2.5V operating supply

?-40°C to 85°C ambient operating temperature ?Pin compatible with the MPC947

32-Lead LQFP

7mm x 7mm x 1.4mm package body

Y Package Top View

32 31 30 29 28 27 26 25

9 10 11 12 13 14 15 1612345678

2423222120191817

GND Q3V DDO Q4GND Q5V DDO GND

GND CLK_SEL

CLK0CLK1CLK_EN

OE V DD GND

GND

V DDO

GND

V DDO

GND

V DDO

GND

V DDO

GND

ICS83947I-147

Q0Q1

Q2Q3Q4Q5Q6Q7Q8

CLK0CLK1

CLK_EN

CLK_SEL

The Preliminary Information presented herein represents a product in prototyping or pre-production. The noted characteristics are based on initial product characterization. Integrated Circuit Systems, Incorporated (ICS) reserves the right to change any circuitry or specifications without notice.

LVCMOS/LVTTL F ANOUT B UFFER

T ABLE 1. P IN D ESCRIPTIONS

T ABLE 2. P IN C HARACTERISTICS

T ABLE 3. O UTPUT E NABLE AND C LOCK E NABLE F UNCTION T ABLE

r e b m u N e m a N e p y T n

o i t p i r c s e D ,71,61,21,9,8,12

3,92,52,42,02D

N G r e w o P .

d n u o r g y l p p u s r

e w o P 2L E S _K L C t u p n I p

u l l u P ,W O L n e h W .1K L C s t c e l e s ,H G I H n e h W .t u p n i t c e l e s k c o l C .

s l e v e l e c a f r e t n i L T T V L /S O M C V L .0K L C s t c e l e s 4,31K L C ,0K L C t u p n I p u l l u P .

s l e v e l e c a f r e t n i L T T V L /S O M C V L .s t u p n i k c o l c e c n e r e f e R 5N E _K L C t u p n I p u l l u P .s l e v e l e c a f r e t n i L T T V L /S O M C V L .e l b a n e k c o l C 6E O t u p n I p u l l u P .

s l e v e l e c a f r e t n i L T T V L /S O M C V L .e l b a n e t u p t u O 7

V D

D r

e w o P .

n i p y l p p u s e r o C 13,72,22,81,41,01V O D D r e w o P .s n i p y l p p u s t u p t u O ,12,91,51,31,1103,82,62,32,5Q ,6Q ,7Q ,8Q 0Q ,1Q ,2Q ,3Q ,4Q t

u p t u O .

s t u p t u o k c o l c 8Q u r h t 0Q .s l e v e l e c a f r e t n i L T T V L /S O M C V L :E T O N p u l l u P .

s e u l a v l a c i p y t r o f ,s c i t s i r e t c a r a h C n i P ,2e l b a T e e S .s r o t s i s e r t u p n i l a n r e t n i o t s r e f e r s t u p n I l o r t n o C t u p t u O E O N

E _K L C 8Q :0Q 0X Z -i H 10W O L 1

u p n i K L C s w o l l o F l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m

u m i x a M s t i n U C N I e

c n a t i c a p a C t u p n I 4

F p C D P e c n a t i c a p a C n o i t a p i s s i D r e w o P )

t u p t u o r e p (V D D V ,O D D V 6.3=52F p V D D V ,O D D V

526.2=D B T F p R P U L L U P r o t s i s e R p u l l u P t u p n I 15K ?R N W O D L L U P r o t s i s e R n w o d l l u P t u p n I 15K ?R T

U O e

c n a

e p m I t u p t u O 7

LVCMOS/LVTTL F ANOUT B UFFER

T ABLE 4A. P OWER S UPPLY DC C HARACTERISTICS , V DD = V DDO = 3.3V±0.3V, T A = -40°C TO 85°C

T ABLE 4B. LVCMOS/LVTTL DC C HARACTERISTICS , V DD = V DDO = 3.3V±0.3V, T A = -40°C TO 85°C

l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l a c i p y T m

u m i x a M s t i n U V D D e g a t l o V y l p p u S e r o C 0.33.36.3V V O D D e g a t l o V y l p p u S t u p t u O 0

.33.36

.3V I D D t n e r r u C y l p p u S t u p n I 33A m I O

D D t

n e r r u C y l p p u S t u p t u O 8

m l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m u m i x a M s t i n U V H I e g a t l o V h g i H t u p n I 1

K L C ,0K L C 2V D D 3.0+V E O ,N E _K L C ,L E S _K L C 2V D D 3.0+V V L I e g a t l o V w o L t u p n I 1

K L C ,0K L C 3.0-3.1V E O ,N E _K L C ,L E S _K L C 3

.0-8.0V I H I t n e r r u C h g i H t u p n I ,L E S _K L C ,1K L C ,0K L C N

E _K L C ,E O V D D V =N I V 6.3=5

A μI L I t n e r r u C w o L t u p n I ,L E S _K L C ,1K L C ,0K L C N

E _K L C ,E O V D D V ,V 6.3=N I V

0=051-A μV H O e g a t l o V h g i H t u p t u O I H O A m 02-=5

.2V V L

O e

g a t l o V w o L t u p t u O I L O A

m 02=4

.0V

A BSOLUTE M AXIMUM R ATINGS

Supply Voltage, V DD 4.6V

Inputs, V I -0.5V to V DD + 0.5 V Outputs, V O

-0.5V to V DDO + 0.5V Package Thermal Impedance, θJA 47.9°C/W (0 lfpm)Storage T emperature, T STG

-65°C to 150°C

NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions be-yond those listed in the DC Characteristics or AC Character-istics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.

LVCMOS/LVTTL F ANOUT B UFFER

T ABLE 5A. AC C HARACTERISTICS , V DD = V DDO = 3.3V±0.3V, T A = -40°C TO 85°C

l o b m y S r e t e m a r a P s n o i t i d n o C t s e T m

u m i n i M l a c i p y T m u m i x a M s t i n U f X A M y c n e u q e r F t u p t u O 0

53z H M t D

P 1E T O N ,y a l e D n o i t a g a p o r P f ≤Z H M 0522

.35.4s n t )o (k s 5,2E T O N ;w e k S t u p t u O n o d e r u s a e M V @e g d e g n i s i r O D D 2

/051s p t )p p (k s 5,3E T O N ;w e k S t r a P -o t -t r a P n o d e r u s a e M V @e g d e g n i s i r O D D 2

05s p t R t /F e m i T l l a F /e s i R t u p t u O V 0.2o t V 8.02

.01

s n t W P h t d i W e s l u P t u p t u O f ≥z H M 051t d o i r e P 2

/s p c d o e

l c y C y t u D t u p t u O z

H M 051

1s n t S

m i T p u t e S e l b a n E k c o l C 0

n t S

e m i T d l o H e l b a n E k c o l C 1s n .e s i w r e h t o d e t o n s s e l n u z H M 052o t l a u q e r o n a h t s s e l s e i c n e u q e r

f t a d e r u s a e m s r e t e m a r a p l l A V m o r f d e r u s a e M :1E T O N D D V o t t u p n i e h t f o 2/O D D .

t u p t u o e h t f o 2/V t a d e r u s a e M .s n o i t i d n o c d a o l l a u q e h t i w d n a e g a t l o v y l p p u s e m a s e h t t a s t u p t u o n e e w t e b w e k s s a d e n i f e D :2E T O N O D D .2/h t i w d n a s e g a t l o v y l p p u s e m a s e h t t a g n i t a r e p o s e c i v e d t n e r e f f i d n o s t u p t u o n e e w t e b w e k s s a d e n i f e D :3E T O N V t a d e r u s a e m e r a s t u p t u o e h t ,e c i v e d h c a e n o s t u p n i f o e p y t e m a s e h t g n i s U .s n o i t i d n o c d a o l l a u q e O D D .2/.n o i t c u d o r p n i d e t s e t t o N .n o i t a z i r e t c a r a h c y b d e e t n a r a u g e r a s r e t e m a r a p e s e h T :4E T O N .

56d r a d n a t S C E D E J h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h T :5E T O N T ABLE 4C. P OWER S UPPLY DC C HARACTERISTICS , V DD = V DDO = 2.5V ± 5%, T A = -40°C TO 85°C

T ABLE 4D. LVCMOS/LVTTL DC C HARACTERISTICS , V DD = V DDO = 2.5V ± 5%, T A = -40°C TO 85°C

l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l a c i p y T m u m i x a M s t i n U V D D e g a t l o V y l p p u S e r o C 573.25.2526.2V V O D D e g a t l o V y l p p u S t u p t u O 5

73.25

.2526.2V I D

D t

n e r r u C y l p p u S t u p n I 5

m l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m u m i x a M s t i n U V H I e g a t l o V h g i H t u p n I 1

K L C ,0K L C 2V D D 3.0+V E O ,N E _K L C ,L E S _K L C 2V D D 3.0+V V L I e g a t l o V w o L t u p n I 1

K L C ,0K L C 3.0-3.1V E O ,N E _K L C ,L E S _K L C 3

.0-8.0V I H I t n e r r u C h g i H t u p n I ,L E S _K L C ,1K L C ,0K L C N

E _K L C ,E O V D D V =N I V 6.3=5

A μI L I t n e r r u C w o L t u p n I ,L E S _K L C ,1K L C ,0K L C N

E _K L C ,E O V D D V ,V 6.3=N I V

0=051-A μV H O e g a t l o V h g i H t u p t u O I H O A m 02-=8

.1V V L

O e

g a t l o V w o L t u p t u O I L O A

m 02=4

.0V

LVCMOS/LVTTL F ANOUT B UFFER

T ABLE 5B. AC C HARACTERISTICS , V DD = V DDO = 2.5V ± 5%, T A = -40°C TO 85°C

l o b m y S r e t e m a r a P s n o i t i d n o C t s e T m u m i n i M l

a c i p y T m u m i x a M s t i n U f X A M y c n e u q e r F t u p t u O 0

53z H M t D

P 1E T O N ,y a l e D n o i t a g a p o r P f ≤Z H M 0524

.25.4s n t )o (k s 5,2E T O N ;w e k S t u p t u O n o d e r u s a e M V @e g d e g n i s i r O D D 2

/051s p t )p p (k s 5,3E T O N ;w e k S t r a P -o t -t r a P n o d e r u s a e M V @e g d e g n i s i r O D D 2

06s p t R t /F e m i T l l a F /e s i R t u p t u O V 0.2o t V 8.02

.01

s n t W P h t d i W e s l u P t u p t u O f ≥z H M 051t d o i r e P 2/s p c d o e

l c y C y t u D t u p t u O z

H M 051

5%t N E 4E T O N ;e m i T e l b a n E t u p t u O 01s n t S I D 4E T O N ;e m i T e l b a s i D t u p t u O 0

1s n t S

m i T p u t e S e l b a n E k c o l C 0

n t S

e m i T d l o H e l b a n E k c o l C 1s n .e s i w r e h t o d e t o n s s e l n u z H M 052o t l a u q e r o n a h t s s e l s e i c n e u q e r

f t a d e r u s a e m s r e t e m a r a p l l A V m o r f d e r u s a e M :1E T O N D D V o t t u p n i e h t f o 2/O D D .

56d r a d n a t S C E D E J h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h T :5E T O N

LVCMOS/LVTTL F ANOUT B UFFER

P ARAMETER M EASUREMENT I NFORMATION

LVCMOS/LVTTL F ANOUT B UFFER

R ELIABILITY I NFORMATION

T RANSISTOR C OUNT

The transistor count for ICS83947I-147 is: 1040

T ABLE 6. θJA VS . A IR F LOW T ABLE

q JA by Velocity (Linear Feet per Minute)

200

500

Single-Layer PCB, JEDEC Standard Test Boards 67.8°C/W 55.9°C/W 50.1°C/W Multi-Layer PCB, JEDEC Standard Test Boards

47.9°C/W

42.1°C/W

39.4°C/W

NOTE: Most modern PCB designs use multi-layered boards. The data in the second row pertains to most designs.

LVCMOS/LVTTL F ANOUT B UFFER

P ACKAGE O UTLINE - Y S UFFIX

T ABLE 7. P ACKAGE D IMENSIONS

O I T A I R A V C E D E J S

R E T E M I L L I M N I S N O I S N E M I D L L A L

O B M Y S A

B B M

U M I N I M L

A N I M O N M

U M I X A M N 23A ----06.11A 50.0--51.02A 53.104.154.1b 03.073.054.0c 9

0.0--02.0D C I S A B 00.91D C I S A B 00.72D .f e R 06.5E C I S A B 00.91E C I S A B 00.72E .f e R 06.5e C

I S A B 08.0L 54.006.057.0q 0°--7°c

c c ----01.0Reference Document: JEDEC Publication 95, MS-026

LVCMOS/LVTTL F ANOUT B UFFER

T ABLE 8. O RDERING I NFORMATION

While the information presented herein has been checked for both accuracy and reliability, Integrated Circuit Systems, Incorporated (ICS) assumes no responsibility for either its use or for infringement of any patents or other rights of third parties, which would result from its use. No other circuits, patents, or licenses are implied. This product is intended for use in normal commercial and industrial applications. Any other applications such as those requiring high reliability or other extraordinary environmental requirements are not recommended without additional processing by ICS. ICS reserves the right to change any circuitry or specifications without notice. ICS does not authorize or warrant any ICS product for use in life support devices or critical medical instruments.r e b m u N r e d r O /t r a P g n i k r a M e g a k c a P t n u o C e r u t a r e p m e T 741-I Y A 74938S C I 741I A 74938S C I P

F Q L d a e L 23y

a r t r e p 052C °58o t C °04-T

741-I Y A 74938S C I 7

41I A 74938S C I l

e e R d n a e p a T n o P F Q L d a e L 230

001C

°58o t C °04-

ics83947-147i

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