ECG040B-G中文资料

InGaP HBT Gain Block

Product Features

? DC – 4 GHz

? +18.5 dBm P1dB at 1 GHz ? +35 dBm OIP3 at 1 GHz ? 16 dB Gain at 1 GHz ? 5.5 dB Noise Figure ? Available in Lead-free / green SOT-89 Package Style

? Internally matched to 50 Ω

Applications

? Mobile Infrastructure ? CATV / FTTX ? W-LAN / ISM ? RFID

? WiMAX / WiBro

Product Description

The ECG040 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1 GHz, the ECG040B typically provides 15.8 dB of gain, +35 dBm Output IP3, and +18.5 dBm P1dB.

The ECG040 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in a low- cost, surface-mountable lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested.

The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG040 will work for other various applications within the DC to 4 GHz frequency range such as CATV and mobile wireless.

Functional Diagram

Function Pin No. Input 1 Output/Bias 3 Ground 2, 4

Specifications (1)

Parameter

Units

Min

Typ

Max

Operational Bandwidth MHz DC 4000 Test Frequency MHz 1000

Gain dB 15.8

Output P1dB dBm +18.5

Output IP3 (2) dBm +35

Test Frequency MHz 2000

Gain dB 12.8 15.3

Input Return Loss dB 22 Output Return Loss dB 16 Output P1dB dBm +18

Output IP3 (2)

dBm +35

Noise Figure dB 5.5

Device Voltage V 4.8 Device Current mA 70

1. Test conditions unless otherwise noted: 25 oC, Supply Voltage = +6 V, Rbias = 16 Ω, 50 Ω System.

2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature -40 to +85 °C Storage Temperature

-65 to +150 °C RF Input Power (continuous) +12 dBm Device Current

130 mA Junction Temperature

+250 °C

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance (1)

Parameter

Units

Typical

Frequency MHz 500 900 1900 2140

S21 dB 16.0 15.8 15.3 15.1 S11 dB -24 -24 -23 -21 S22 dB -27 -23 -16 -16 Output P1dB dBm +18.5 +18.5 +18 +19 Output IP3 (2)

dBm +35.5 +35 +34.5 +30.5 Noise Figure dB 4.6 5.5 5.8 3.8

Ordering Information

Part No.

Description

ECG040B-G InGaP HBT Gain Block

(lead-free/green/RoHS-compliant SOT-89 package)

ECG040B-PCB

700 –2400 MHz Fully Assembled Eval. Board

InGaP HBT Gain Block

Typical Device RF Performance

Supply Bias = +6 V, R bias = 16 Ω, I cc = 70 mA

Frequency MHz 100 500 900 1900 2140 2400 3500 S21 dB 16.2 16.0 15.8 15.3 15.1 14.8 13.9 S11 dB -23 -24 -24 -23 -21 -20 -17 S22 dB -32 -27 -23 -16 -16 -15 -11 Output P1dB dBm +18.4 +18.5 +18 +18 +18 +18 +17.5 Output IP3 dBm +35.6 +35.5 +35 +33.2 +32.9 +32.4 Noise Figure dB 4.6 4.7 4.9 5.1 5.3 5.4

1. Test conditions: T = 25 oC, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 16 Ω, Icc = 70 mA typical, 50 Ω System.

2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.

Gain

8

10121416180

1

2

3

4

5

6

Frequency (GHz)G a i n (d B )

Return Loss -40

-30

-20-1000123456

Frequency (GHz)

S 11, S 22 (d B )

Ic c vs. V cc

24681012141618200

12

3456

V cc (V )

I c c (m A )

O IP 3 vs. F re q u e n cy

22334500

1000

1500

2000

2500

3000

F req u e n cy (M H z)O I P 3 (d B m )

N o ise F ig u re vs. F req u e n cy

500

100015002000

F re q u e n cy

(M H z)N F (d B )P 1d B vs . F req u en cy

1111222500

1000

1500

2000

2500

3000

F req u en c y (M H z)

P 1d B (d B m )

InGaP HBT Gain Block

Recommended Application Circuit

Recommended Component Values

Reference Frequency (MHz)

Designator

50 500 900 1900 2200 2500 3500 L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH C1, C2, C4

.018 μF 1000 pF 100 pF 68 pF 68 pF 56 pF

39 pF

1. The proper values for the components are dependent upon the intended frequency of operation.

2. The following values are contained on the evaluation board to achieve optimal broadband performance:

Ref. Desig. Value / Type

Size L1 39 nH wirewound inductor 0603 C1, C2 56 pF chip capacitor 0603 C3 0.018 μF chip capacitor 0603 C4 Do Not Place

R4

16 Ω 1% tolerance 0805

The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended.

Typical Device S-Parameters

S-Parameters (V device = +4.8 V, I CC = 70 mA, T = 25 °C, calibrated to device leads) Freq (MHz)

S11 (dB)

S11 (ang)

S21 (dB)

S21 (ang)

S12 (dB)

S12 (ang)

S22 (dB)

S22 (ang)

50 -23.31 -179.51 16.19 177.81 -19.40 -0.03 -36.95 -170.80 500

-23.69 170.90 16.04 158.74 -19.30 -5.83 -27.31 -130.75 1000 -23.45 162.60 15.79 138.37 -19.12 -12.26 -21.40 -141.51 1500 -22.70 156.61 15.50 118.53 -19.03 -19.16 -18.24 -153.77 2000 -22.13 148.64 15.16 99.02 -18.71 -26.80 -16.09 -175.02 2500 -19.60 139.22 14.76 79.46 -18.36 -32.98 -14.17 167.68 3000 -19.24 121.52 14.31 61.06 -18.13 -41.04 -12.61 152.88 3500 -16.99 115.00 13.86 41.97 -17.78 -51.05 -11.16 130.54 4000 -15.40 97.66 13.33 23.55 -17.23 -58.84 -10.31 115.55 4500 -13.81 84.99 12.88 4.82 -16.82 -68.93 -9.04 97.41 5000 -11.78 64.76 12.19 -13.55 -16.84 -79.74 -7.54 76.41 5500 -11.08 52.37 11.70 -30.90 -16.58 -89.82 -7.37 64.41 6000 -9.31 35.87 10.98 -50.95 -16.15 -102.41 -6.42 46.46

Device S-parameters are available for download off of the website at: https://www.sodocs.net/doc/181235088.html,

Vcc

InGaP HBT Gain Block

ECG040B-G Mechanical Information

This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.

°C convection reflow