STP12NM50FD中文资料

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June 2002STP12NM50FD-STP12NM50FDFP-STW14NM50FD

STB12NM50FD - STB12NM50FD-1

N-CHANNEL500V-0.32?-12ATO-220/FP/D 2PAK/I 2PAK/TO-247

FDmesh? Power MOSFET (with FAST DIODE)

s TYPICAL R DS (on) = 0.32 ?

s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED

s

LOW INPUT CAPACITANCE AND GATE CHARGE

s LOW GATE INPUT RESISTANCE

s

TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

DESCRIPTION

The FDmesh ? associates all advantages of re-duced on-resistance and fast switching with an in-trinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in par-ticular ZVS phase-shift converters.

APPLICATIONS

s ZVS PHASE-SHIFT FULL BRIDGE

CONVERTERS FOR SMPS AND WELDING EQUIPMENT

ORDERING INFORMATION

TYPE V DSS R DS(on)I D Pw STP12NM50FD STP12NM50FDFP STB12NM50FD STB12NM50FD-1STW14NM50FD

500 V 500 V 500 V 500 V 500 V

< 0.4 ?< 0.4 ?< 0.4 ?< 0.4 ?< 0.4 ?

12 A 12 A 12 A 12 A 14 A

160 W 35 W 160 W 160 W 175 W

SALES TYPE MARKING PACKAGE PACKAGING

STP12NM50FD P12NM50FD TO-220TUBE STP12NM50FDFP P12NM50FDFP TO-220FP TUBE STB12NM50FD B12NM50FD D 2PAK TUBE STB12NM50FDT4B12NM50FD D 2PAK TAPE & REEL

STB12NM50FD-1B12NM50FD I 2PAK TUBE STW14NM50FD

W14NM50FD

TO-247

TUBE

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ABSOLUTE MAXIMUM RATINGS

(l ) Pulse width limited by safe operating area

(1) I SD ≤12A, di/dt ≤ 400 μA, V DD ≤ V (BR)DSS , T j ≤ T JMAX.(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Value

Unit

TO-220 / D 2

PAK / I 2PAK

TO-220FP

TO-247

V DS Drain-source Voltage (V GS = 0)500V V DGR Drain-gate Voltage (R GS = 20 k ?)500V V GS Gate- source Voltage

± 30V I D Drain Current (continuous) at T C = 25°C 1212 (*)14A I D Drain Current (continuous) at T C = 100°C 7.57.5 (*)8.8A I DM (l )Drain Current (pulsed)4848 (*)56A P TOT Total Dissipation at T C = 25°C 16035175W Derating Factor

1.28

0.28 1.4

W/°C dv/dt (1)Peak Diode Recovery voltage slope 20V/ns V ISO Insulation Withstand Voltage (DC)-2500V T j T stg

Operating Junction Temperature Storage Temperature

- 65 to 150- 65 to 150

°C °C

TO-220I 2PAK

D 2PAK

TO-220FP TO-247Rthj-case Thermal Resistance Junction-case Max 0.78

3.57

0.715

°C/W Rthj-pcb Thermal Resistance Junction-pcb Max

(When mounted on minimum Footprint)

30°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

30

°C/W T l

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol Parameter

Max Value

Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)

6A E AS

Single Pulse Avalanche Energy

(starting T j = 25 °C, I D = I AR , V DD = 50 V)

400

mJ

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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1.Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS Drain-source

Breakdown Voltage I D = 1 mA, V GS = 0

500

V I DSS Zero Gate Voltage

Drain Current (V GS = 0)V DS = Max Rating

V DS = Max Rating, T C = 125 °C 110μA μA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 30V

±100nA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250μA 3

45V R DS(on)

Static Drain-source On Resistance

V GS = 10V, I D = 6A

0.32

0.4

?

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs (1)Forward Transconductance V DS = 15 V , I D =6 A

9.8S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance

V DS = 25V, f = 1 MHz, V GS = 0

102720524pF pF pF R G

Gate Input Resistance

f=1 MHz Gate DC Bias = 0Test Signal Level = 20mV Open Drain

3.7

?

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)t r Turn-on Delay Time Rise Time

V DD = 250 V, I D = 6 A R G =4.7? V GS = 10 V

(Resistive Load see, Figure 3)1910ns ns Q g Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

V DD = 400V, I D = 12 A,V GS = 10V

27.5812

38.5nC nC nC

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t r(Voff)t f t c

Off-voltage Rise Time Fall Time

Cross-over Time

V DD = 400 V, I D = 12 A, R G =4.7?, V GS = 10V

(Inductive Load see, Figure 5)

391829

ns ns ns

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD I SDM (2)Source-drain Current

Source-drain Current (pulsed)1248A A V SD (1)Forward On Voltage I SD = 12 A, V GS = 0 1.5

V t rr Q rr I RRM

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD = 12 A, di/dt = 100A/μs V DD = 30V, T j = 150°C (see test circuit, Figure 5)

2241.312

ns μC A

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5/14

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Source-drain Diode Forward Characteristics

Normalized BVDSS vs Temperature

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Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 1:

Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

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1

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TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

D 2PAK FOOTPRINT

* on sales type

DIM.mm inch MIN.

MAX.MIN.

MAX.A 330

12.992

B 1.50.059

C 12.813.20.5040.520

D 20.20795G 24.426.40.960 1.039N 100

3.937

T

30.4 1.197

BASE QTY BULK QTY 1000

1000REEL MECHANICAL DATA

DIM.mm inch MIN.MAX.MIN.

MAX.

A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F 11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.1

0.0750.082R 50 1.574

T 0.250.350.00980.0137

W

23.7

24.30.9330.956

TAPE MECHANICAL DATA

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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