SI4835BDY-T1中文资料
FEATURES
D TrenchFET r Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
D Load Switches
-Notebook PCs -Desktop PCs
Vishay Siliconix
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P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V)
r DS(on) (W )
I D (A)
0.018 @ V GS = -10 V -9.6-30
0.030 @ V GS = -4.5 V
-7.5
S D S D S D G
D
SO-8
5
678Top View
234
1S
G
P-Channel MOSFET
Ordering Information:Si4835BDY
Si4835BDY -T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Unit
Drain-Source Voltage V DS -30
Gate-Source Voltage
V GS "25
V
T A = 25_C -9.6-7.4Continuous Drain Current (T J = 150_C)a T A = 70_C
I D -7.7
-5.9
Pulsed Drain Current
I DM -50
A
continuous Source Current (Diode Conduction)a I S -2.1-1.3Maximum Power Dissipation T A = 25_C 2.5 1.5a
T A = 70_C P D 1.6
0.9
W Operating Junction and Storage Temperature Range
T J , T stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical
Maximum
Unit
M i
J ti t A bi t t v 10 sec
3950Maximum Junction-to-Ambient a Steady State R thJA 7085_Maximum Junction-to-Foot (Drain)Steady State
R thJF
18
22
C/W
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SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V GS(th)V DS = V GS , I D = -250 m A -1.0
-3.0V Gate-Body Leakage
I GSS V DS = 0 V, V GS = "25
V "100nA V DS = -24 V, V GS = 0 V -1Zero Gate Voltage Drain Current I DSS V DS = -24 V, V GS = 0 V, T J = 55_C
-5
m A On-State Drain Current a
I D(on)V DS v -5 V, V GS = -10 V -50
A Drain Source On State Resistance DS()V GS = -10 V, I D = -9.6 A 0.0140.018Drain-Source On-State Resistance a r DS(on)V GS = -4.5 V, I D = -7.5 A 0.0230.030
W Forward Transconductance a g fs V DS = -15 V, I D = -9.6 A 30S Diode Forward Voltage a
V SD
I S = -2.1 A, V GS = 0 V
-0.8
-1.2V
Dynamic b
Total Gate Charge Q g 2537
Gate-Source Charge Q gs V DS = -15 V, V GS = -5 V, I D = -9.6 A
6.5nC
Gate-Drain Charge Q gd 12.5Gate Resistance R g 1.0
2.9 4.9W
Turn-On Delay Time t d(on)1525Rise Time
t r V 1320Turn-Off Delay Time t d(off)DD = -15 V, R L = 15 W
I D ^ -1 A, V GEN = -10 V, R G = 6 W
60100ns Fall Time
t f 4570Source-Drain Reverse Recovery Time
t rr
I F = -2.1 A, di/dt = 100 A/m s 45
80
Notes
a.Pulse test; pulse width v 300 m s, duty cycle v 2%.
b.Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
010
20
30
4050
1
2
3
4
5
010
2030
40
50
1
2
3
4
5
6
- D r a i n C u r r e n t (A )
I D - D r a i n C u r r e n t (A )
I D
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- O n -R e s i s t a n c e (r D S (o n )W )
0800
1600
2400
3200
6
12182430
0.60.8
1.0
1.2
1.4
1.6
-50
-250255075100125150
0246
8
10
10
20
30
40
50
0.00
0.01
0.02
0.03
0.04
0.05
10
20
30
40
50
V DS
- Drain-to-Source Voltage (V)
I D - Drain Current (A)
Gate Charge
On-Resistance vs. Drain Current
- G a
t e -t o -S o u r c e V o l t a g e (V )
Q g - Total Gate Charge (nC)
C - C a p a c i t a n c e (p F )
V G S Capacitance
On-Resistance vs. Junction Temperature
(N o r m a l i z e d )
- O n -R e s i s t a n c e (r D S (o n )W )0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.01
0.02
0.03
0.04
0.05
2
4
6
8
10
60
10
1Source-Drain Diode Forward Voltage
- O n -R e s i s t a n c e (r D S (o n )W )
- S o u r c e C u r r e n t (A )
I S
Single Pulse Power, Junction-to-Ambient
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
21
0.1
0.01
Normalized Thermal Transient Impedance, Junction-to-Foot
N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c e