FMS2016-005中文资料
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
High Power Reflective GaAs SP4T Switch
Features:
? 3x3x0.9mm Packaged pHEMT Switch ? NiPdAu finish for Military and High
reliability applications
? Excellent low control voltage performance ? Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels ? Very high isolation: >29dB at 1.8GHz ? Very low Insertion loss: 0.65dB at 1.8GHz ? Very low control current
Functional Schematic
Description and Applications:
The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5μm switch process technology, which offers excellent performance optimised for switch applications. The FMS2016QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary.
Electrical Specifications: (T AMBIENT = 25°C,V ctrl = 0V/2.5V, Z IN = Z OUT = 50?)
Parameter
Test Conditions
Min Typ Max
Units
Insertion Loss
0.5 – 1.0 GHz 1.0 – 2.0 GHz
<0.55 <0.65
dB
dB Return Loss 0.5 – 2.5 GHz
20
dB
Isolation
RF1 – RF3 and RF2 – RF4
0.5 – 1.0 GHz 1.0 – 2.0 GHz 34 32
dB
dB
Isolation RF1 – RF2 0.5 – 1.0 GHz 1.0 – 2.0 GHz 34 32
dB
dB
Isolation RF3 – RF4 0.5 – 1.0 GHz 1.0 – 2.0 GHz
34 30
dB
dB
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75 -75
dBc
dBc
3rd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75 -75
dBc
dBc Switching speed : Trise, Tfall Ton, Toff
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
<0.3
1.0
μs μs Control Current
+35dBm RF input @1GHz
<10
μA
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)
RF1
RF3
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Absolute Maximum Ratings:
Parameter
Symbol
Absolute Maximum
Max Input Power Pin +38dBm Control Voltage V ctrl +5V Operating Temp T oper -40°C to +100°C Storage Temp
T stor
-55°C to +150°C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
Truth Table:
Switch State
V1 V2 V3 V4
ANT TO RF1
ANT TO RF2 ANT TO RF1 ANT TO RF2
(A)
HIGH LOW LOW LOW Insertion Loss
Isolation Isolation
Isolation
(B) LOW HIGH
LOW LOW Isolation
Insertion
Loss Isolation Isolation (C) LOW LOW HIGH
LOW Isolation Isolation
Insertion Loss Isolation (D) LOW LOW LOW HIGH Isolation Isolation
Isolation
Insertion Loss
General Test Conditions:
Bias Voltages LOW = 0V to 0.2V HIGH +2.5V to +5V
Port Impedances 50? Off arm termination
50?
Typical Measured Performance on Evaluation Board (De-Embedded): (Measurement Conditions V CTRL = 2.5V (high) & 0V (low), T AMBIENT = 25°C unless otherwise stated)
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Pad Layout:
*View from the top of the package
QFN 12 Lead 3*3 Package Outline:
? NiPdAu finish for Military and High reliability applications
Pin Number
Description
1 RF1
2 GND
3 RF3
4 V3
5 N/C
6 V4
7 RF4 8 GND 9 RF2 10 V2 11 ANT RF
12 V1 PADDLE GND
V1 RF1
V2
ANT GND RF3 V4
V3
Evaluation Board:
Evaluation Board De-Embedding Data (Measured):
BOM
Label
Component
C10, C11, C12,
C13
Capacitor, 470pF, 0603
C1,C2, C3,C4,C5 Capacitor, 100pF, 0402
C6, C7, C8, C9
Capacitor, 47pF, 0402
BOARD Preferred evaluation board material is 0.25 mm thick
ROGERS RT4350. All RF tracks should be 50 ohm
characteristic impedance.
C11 C12 C7
C10
C3 C4
C6 C5
C8 C2
C1
C9
C13
6
Preliminary specifications subject to change without notice
Ordering Information:
Part Number
Description
FMS2016-005 Packaged Die FMS2016-005-EB
Packaged die mounted on evaluation board
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A as defined in Jedec Standard No.22-A114 (0-500V).
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
Preferred Assembly Instructions:
Please refer to FCSL applications note: FAN 003 (handling and assembly of Filtronic QFN devices)
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.