DG2516DQ-T1-E3中文资料

Vishay Siliconix

DG2515, DG2516

3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch

FEATURES

? 1.8 V to 5.5 V single supply operation

?Low

R ON : 3 Ω at 4.2 V

?235 MHz, - 3 dB bandwidth

?Low off-isolation, - 51 dB at 10 MHz ?+ 1.6 V logic compatible

BENEFITS

?High linearity

?Low power consumption ?High bandwidth

?

Full rail signal swing range

APPLICATIONS

?USB/UART signal switching ?Audio/video switching ?Cellular phone ?Media players ?Modems ?Hard drives ?PCMCIA DESCRIPTION

The DG2515, DG2516 are low-voltage dual single-pole/double-throw monolithic CMOS analog switches. Designed to operate from 1.8 V to 5.5 V power supply, the DG2515,DG2516 achieves a bandwidth of 235 MHz while providing low on-resistance (3 Ω), excellent on-resistance matching (0.2 Ω) and flatness (1 Ω) over the entire signal range.The DG2515, DG2516 offers the advantage of high linearity that reduces signal distortion, making ideal for audio, video,and USB signal routing applications. Additionally, the DG2515, DG2516 are 1.6 V logic compatible within the full operation voltage range.

Built on Vishay Siliconix’s proprietary sub-micron high-density process, the DG2515, DG2516 brings low power consumption at the same time as reduces PCB spacing with the MSOP10 package.

As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with 100 % matte tin device termination, the lead (Pb)-free "- E3" suffix is being used as a designator.

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

TRUTH TABLE

Logic NC1 and NC2

NO1 and NO2

0ON OFF 1

OFF

ON

ORDERING INFORMATION

Temp Range Package Part Number - 40 °C to 85 °C

MSOP-10

DG2515DQ-T1-E3DG2516DQ-T1-E3

Vishay Siliconix

DG2515, DG2516

Notes:

a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b. All leads welded or soldered to PC board.

c. Derate 4.0 mW/°C above 70 °C.

ABSOLUTE MAXIMUM RATINGS

Parameter Limit

Unit

Reference to GND V+

- 0.3 to + 6V IN, COM, NC, NO a

- 0.3 to (V+ + 0.3)

Continuous Current (Any terminal)

± 50mA Peak Current (Pulsed at 1 ms, 10 % Duty Cycle)± 200Storage T emperature (D Suffix)- 65 to 150

°C Power Dissipation (Packages)b

MSOP-10c

320

mW

SPECIFICATIONS V+ = 3 V

Parameter Symbol

Test Conditions

Otherwise Unless Specified V+ = 3 V, ± 10 %, V IN = 0.5 or 1.4 V e Temp.a Limits - 40 °C to 85 °C

Unit Min.b Typ.c Max.b Analog Switch

Analog Signal Range d V NO , V NC ,

V COM Full 0

V+V

On-Resistance R ON V+ = 2.7 V , V COM = 1.5 V

I NO/NC = 10 mA Room Full 3.2 4.55.0ΩR ON Flatness

R ON

Flatness V+ = 2.7 V, V COM = 1.5, 2 V

I NO/NC = 10 mA Room Full 1.0 1.416R ON Match Between Channels

ΔR ON V+ = 2.7 V , V COM = 1.5 V

I NO/NC = 10 mA Room Full 0.1

0.30.4Switch Off Leakage Current f

I NO(off), I NC(off)V+ = 3.6 V , V NO , V NC = 0.3 V/3 V

V COM = 3 V/0.3 V Room Full - 1- 10110nA I COM(off)

Room Full - 1- 10110Channel-On Leakage Current f I COM(on)

V+ = 3.6 V , V NO , V NC = V COM = 0.3 V/3 V

Room Full

- 1- 10

110

Digital Control Input High Voltage d V INH Full 1.4

V Input Low Voltage V INL Full 0.5

Input Capacitance C in Full 12

pF Input Current

I INL or I INH

V IN = 0 V or V+

Full

1

1

μA

Dynamic Characteristics Turn-On Time t ON V+ = 2.7 V , V NO or V NC = 1.5 V

R L = 300 Ω, C L = 35 pF Room Full 3070100ns

Turn-Off Time

t OFF Room Full 25

5070

Break-Before-Make Time t d V NO or V NC = 1.5 V , R L = 300 Ω, C L = 35 pF

Full 1

Charge Injection d Q INJ C L = 1 nF , V GEN = 0 V, R GEN = 0 ΩRoom 24pC - 3 dB Bandwidth BW 0 dBm, C L = 5 pF , R L = 50 ΩRoom 235MHz

Off-Isolation d OIRR R L = 50 Ω, C L = 5 pF f = 1 MHz Room - 71dB f = 10 MHz Room - 51Crosstalk d

X TALK R L = 50 Ω, C L = 5 pF

f = 1 MHz Room - 74f = 10 MHz

Room - 52N O , N C Off Capacitance d C NO(off)V IN = 0 or V+, f = 1 MHz Room 17pF C NC(off)Room 17Channel-On Capacitance d C NO(on)Room 40C NC(on)

Room

40

Power Supply Power Supply Current I+

V IN = 0 or V+

Full

0.01

1.0

μA

Vishay Siliconix

DG2515, DG2516

Notes:

a. Room = 25 °C, Full = as determined by the operating suffix.

b. Typical values are for design aid only, not guaranteed nor subject to production testing.

c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

d. Guarantee by design, nor subjected to production test.

e. V IN = input voltage to perform proper function.

f. Guaranteed by 5 V leakage testing, not production tested.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS V+ = 5 V

Parameter Symbol Test Conditions

Otherwise Unless Specified

V+ = 5 V , ± 10 %, V IN = 0.8 or 2.0 V e Temp.a

Limits - 40 °C to 85 °C Unit

Min.b Typ.c

Max.b

Analog Switch Analog Signal Range d V NO , V NC ,

V COM

Full 0

V+V

On-Resistance R ON V+ = 4.2 V , V COM = 3.5 V , I NO/NC = 10 mA

Room Full 3 4.04.3ΩR ON Flatness

R ON Flatness V+ = 4.2 V , V COM = 1, 2, 3.5 V

I NO/NC = 10 mA Room Full 1.1 1.41.6R ON Match Between Channels

ΔR ON V+ = 4.2 V , V COM = 3.5 V , I NO/NC = 10 mA Room Full 0.1

0.30.4Switch Off Leakage Current

I NO(off), I NC(off)V+ = 5.5 V

V NO , V NC = 1 V/4.5 V , V COM = 4.5 V/1 V Room Full - 1- 10110nA I COM(off)

Room Full - 1- 10110Channel-On Leakage Current I COM(on)

V+ = 5.5 V , V NO , V NC = V COM = 1 V/4.5 V

Room Full

- 1- 10110

Digital Control Input High Voltage d V INH Full 2.0

V Input Low Voltage V INL Full 0.8

Input Capacitance C in Full 12

pF Input Current

I INL or I INH

V IN = 0 V or V+

Full

1

1

μA

Dynamic Characteristics T urn-On Time t ON V+ = 4.2 V, V NO or V NC = 3 V R L = 300 Ω, C L = 35 pF Room Full 255070ns

T urn-Off Time

t OFF Room Full 20

4050

Break-Before-Make Time t d V NO or V NC = 3 V , R L = 300 Ω, C L = 35 pF

Full 1

Charge Injection d Q INJ C L = 1 nF , V GEN = 0 V , R GEN = 0 ΩRoom 49pC - 3 dB Bandwidth BW 0 dBm, C L = 5 pF , R L = 50 ΩRoom 235MHz

Off-Isolation d OIRR R L = 50 Ω, C L = 5 pF f = 1 MHz Room - 71dB f = 10 MHz Room - 51Crosstalk d

X T ALK R L = 50 Ω, C L = 5 pF

f = 1 MHz Room - 74f = 10 MHz

Room - 52Source Off Capacitance d C NO(off)V IN = 0 or V+, f = 1 MHz Room 17pF C NC(off)Room 17Channel-On Capacitance d C NO(on)Room 40C NC(on)

Room

40

Power Supply Power Supply Range V+ 1.8

5.5V Power Supply Current

I+

V IN = 0 or V+

Full

0.01

1.0

μA

Vishay Siliconix

DG2515, DG2516

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

R ON vs. V COM and Supply Voltage

Supply Current vs. Temperature

Leakage Current vs. Temperature

ON Supply Current vs. Input Switching Frequency

Leakage vs. Analog Voltage

Vishay Siliconix

DG2515, DG2516

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Switching Time vs. Temperature

Off-Isolation and Crosstalk vs. Frequency

Insertion Loss vs. Frequency

Charge Injection vs. Analog Voltage

Switching Threshold vs. Supply Voltage

DG2515, DG2516

Vishay Siliconix

TEST CIRCUITS

Figure 1. Switching Time

Figure 2. Break-Before-Make Interval

Figure 3. Charge Injection

Vishay Siliconix

DG2515, DG2516

TEST CIRCUITS

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.sodocs.net/doc/266780436.html,/ppg?73453.

Figure 4. Off-Isolation

Figure 5. Channel Off/On Capacitance

Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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