SS8P3L-M386A;SS8P2L-M386A;SS8P2LHM387A;SS8P2L-M387A;SS8P3L-M387A;中文规格书,Datasheet资料

SS8P2L, SS8P3L

Vishay General Semiconductor

Document Number: 89001For technical questions within your region, please contact one of the following:https://www.sodocs.net/doc/2710535768.html,

High Current Density Surface Mount

Schottky Barrier Rectifiers

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,freewheeling, dc-to-dc converters, and polarity protection applications.

FEATURES

?Very low profile - typical height of 1.1 mm ?Ideal for automated placement

?Low forward voltage drop, low power losses

?High efficiency ?Low thermal resistance

?Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ?AEC-Q101 qualified

?Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC ?Halogen-free according to IEC 61249-2-21definition

MECHANICAL DATA Case: TO-277A (SMPC)Molding compound meets UL 94 V-0 flammability

rating

Base P/N-M3 - halogen-free and RoHS compliant,commercial grade

Base P/NHM3 - halogen-free and RoHS compliant,automotive grade

Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3suffix meets JESD 201 class 2 whisker test

PRIMARY CHARACTERISTICS

I F(AV)8.0 A

V RRM 20 V , 30 V I FSM

150 A E AS 20 mJ V F at I F = 8.0 A

0.472 V T J max.

150 °C

TO-277A (SMPC)

Anode 1Anode 2

Cathode

K K

2

1

eSMP

TM Series

MAXIMUM RATINGS (T A = 25°C unless otherwise noted)

PARAMETER SYMBOL

SS8P2L SS8P3L UNIT

Device marking code

S82S83Maximum repetitive peak reverse voltage V RRM 20

30

V Maximum average forward rectified current (fig. 1)I F(AV)8.0A Peak forward surge current 10 ms single half sine-wave superimposed on rated load I FSM 150A Non-repetitive avalanche energy at I AS = 2 A, T J = 25 °C

E AS 20mJ Operating junction and storage temperature range

T J, T STG - 55 to + 150

°C

SS8P2L, SS8P3L

Vishay General Semiconductor

https://www.sodocs.net/doc/2710535768.html, For technical questions within your region, please contact one of the following:Document Number: 89001

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2)

Pulse test: Pulse width ≤ 40 ms

Note

(1) Units mounted on recommended P.C.B. 1 oz. pad layout

Note

(1)

Automotive grade

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL

TYP.MAX.UNIT

Maximum instantaneous forward voltage (1)

I F = 4.0 A I F = 8.0 A T A = 25 °C

V F

0.4470.533-0.57V

I F = 4.0 A I F = 8.0 A T A = 125 °C 0.3570.472-0.49Maximum reverse current (2) V R = 30 V T A = 25 °C T A = 125 °C

I R 5524

20035μA mA

Typical junction capacitance 4.0 V , 1 MHz

C J 330

-pF

THERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

PARAMETER

SYMBOL SS8P2L

SS8P3L UNIT Typical thermal resistance R θJA (1)R θJL

603.5

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

SS8P3L-M3/86A 0.1086A 15007" diameter plastic tape and reel SS8P3L-M3/87A 0.1087A 650013" diameter plastic tape and reel SS8P3LHM3/86A (1)0.1086A 15007" diameter plastic tape and reel SS8P3LHM3/87A (1)0.10

87A

6500

13" diameter plastic tape and reel

SS8P2L, SS8P3L

Vishay General Semiconductor

Document Number: 89001For technical questions within your region, please contact one of the following:https://www.sodocs.net/doc/2710535768.html,

RATINGS AND CHARACTERISTICS CURVES (T A = 25°C unless otherwise noted)

Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Figure 3. Typical Instantaneous Forward Characteristics

Figure 4. Typical Reverse Leakage Characteristics

Figure 5. Typical Junction Capacitance

Figure 6. Typical Transient Thermal Impedance

SS8P2L, SS8P3L

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

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Material Category Policy

Vishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-121Document Number: 91000

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VISHAY-GENERAL-SEMICONDUCTOR

SS8P3L-M3/86A SS8P2L-M3/86A SS8P2LHM3/87A SS8P2L-M3/87A SS8P3L-M3/87A SS8P2LHM3/86A SS8P3LHM3/86A SS8P2L-E3/86A SS8P3L-E3/86A