BAS70-04中文资料
BAS70-00 to BAS70-06
Document Number 85702Rev. 1.6, 12-Dec-05
Vishay Semiconductors
https://www.sodocs.net/doc/2617351410.html,
1
Small Signal Schottky Diodes, Single & Dual
Features
?These diodes feature very low turn-on voltage and fast switching
?These devices are protected by a PN
junction guard ring against excessive volt-age, such as electrostatic discharges ?Lead (Pb)-free component
?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Mechanical Data
Case: SOT-23 Plastic case Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
T amb = 25°C, unless otherwise specified
1) Device on fiberglass substrate, see layout on next page
Thermal Characteristics
T amb = 25°C, unless otherwise specified
1) Device on fiberglass substrate, see layout on next page
Part
Ordering code
T ype Marking
Remarks
BAS70-00BAS70-00-GS18 or BAS70-00-GS0873Tape and Reel BAS70-04BAS70-04-GS18 or BAS70-04-GS0874Tape and Reel BAS70-05BAS70-05-GS18 or BAS70-05-GS0875Tape and Reel BAS70-06
BAS70-06-GS18 or BAS70-06-GS08
76
Tape and Reel
Parameter
T est condition
Symbol Value Unit Repetitive peak reverse voltage V RRM = V RWM = V R
70V Forward continuous current T amb = 25°C I F 2001)mA Surge forward current t p < 1 s, T amb = 25°C I FSM 6001)mA Power dissipation 1)
T amb = 25°C
P tot
2001)
mW
Parameter
Test condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 4301)K/W Junction temperature T j 125°C Storage temperature range
T stg
- 65 to + 125
°C
https://www.sodocs.net/doc/2617351410.html, 2
Document Number 85702
Rev. 1.6, 12-Dec-05
BAS70-00 to BAS70-06
Vishay Semiconductors Electrical Characteristics
T amb = 25°C, unless otherwise specified
1) Pulse test; t p
≤ 300 μs
Layout for R thJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)Copper leads 0.3 mm (0.012 in.)
Parameter
Test condition
Symbol Min Typ.Max Unit Reverse breakdown voltage I R = 10 μA (pulsed)V (BR)70
V Leakage current V R = 50 V I R 20
100nA Forward voltage I F = 1.0 mA V F 410mV Forward voltage 1)I F = 15 mA,V F 1000
mV Diode capacitance V R = 0 V , f = 1 MHz C tot 1.52pF Reverse recovery time
I F = 10 mA, I R = 10 mA, I rr = 1 mA, R L = 100 Ω
t rr
5
ns
BAS70-00 to BAS70-06
Document Number 85702Rev. 1.6, 12-Dec-05
Vishay Semiconductors
https://www.sodocs.net/doc/2617351410.html,
3
Package Dimensions in mm (Inches)
https://www.sodocs.net/doc/2617351410.html, 4Document Number 85702
Rev. 1.6, 12-Dec-05
BAS70-00 to BAS70-06
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Notice
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