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DG9431DV-T1-E3中文资料

Vishay Siliconix

DG9431

Low-Voltage Single SPDT Analog Switch

FEATURES

?Low Voltage Operation (+ 2.7 to + 5 V) ?Low On-Resistance - r DS(on): 20 Ω

?Fast Switching - t ON : 35 ns, t OFF : 20 ns ?Low Leakage - I COM(on): 200-pA max ?Low Charge Injection - Q INJ : 1 pC ?Low Power Consumption ?TTL/CMOS Compatible

?ESD Protection > 2000 V (Method 3015.7) ?Available in TSOP-6 and SOIC-8

?

Lead (Pb)-Free Version is RoHS Compliant

BENEFITS

?Reduced Power Consumption ?Simple Logic Interface ?High Accuracy

?

Reduce Board Space (TSOP-6)

APPLICATIONS

?Battery Operated Systems ?Portable Test Equipment ?Sample and Hold Circuits ?Cellular Phones

?Communication Systems ?Military Radio

?

PBX, PABX Guidance and Control Systems

DESCRIPTION

The DG9431 is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (t ON :35ns, t OFF : 20 ns), low on-resistance (r DS(on): 20 Ω)and small physical size (TSOP-6), the DG9431 is ideal for portable and battery powered applications requiring high performance and efficient use of board space.

The DG9431 is built on Vishay Siliconix’s low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7, is 2000 V. An epitaxial layer prevents latchup.Break-before -make is guaranteed for DG9431.

Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. F or analog switching products manufactured with 100 % matte tin device terminations, the lead (Pb)-free “-E3” suffix is being used as a designator.

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

Logic "0" ≤ 0.8 V Logic "1" ≥ 2.4 V

* Pb containing terminations are not RoHS compliant, exemptions may apply

TRUTH TABLE

Logic NC NO 0ON OFF 1

OFF

ON

ORDERING INFORMATION

Temp Range Package Part Number

- 40 to 85 °C

TSOP-6

DG9431DV-T1

DG9431DV-T1-E3 (Lead (Pb)-free)SOIC-8DG9431DY -T1

DG9431DY -T1-E3 (Lead (Pb)-free)

Vishay Siliconix

DG9431

Notes:

a. Signals on S X , D X , or IN X exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.

b. All leads welded or soldered to PC Board.

c. Derate 6.5 mW/°C above 75 °C.

ABSOLUTE MAXIMUM RATINGS

Parameter

Limit Unit Reference V+ to GND

- 0.3 to + 13V IN, COM, NC, NO a

- 0.3 to (V+ + 0.3)

Continuous Current (Any Terminal)

± 20mA Peak Current (Pulsed at 1 ms, 10 % duty cycle)± 40ESD (Method 3015.7)

> 2000V Storage T emperature (D Suffix)- 65 to 125

°C Power Dissipation (Packages)b

8-Pin Narrow Body SOIC c

400

mW

SPECIFICATIONS (V+ = 3 V)

Parameter Symbol Test Conditions

Unless Otherwise Specified V+ = 3 V , ± 10 %, V IN = 0.8 or 2.4 V e Temp a

D Suffix - 40 to 85 °C

Unit

Min c

Typ b

Max c

Analog Switch Analog Signal Range d V ANALOG Full 0

3V

Drain-Source On–Resistance r DS(on)V NO or V NC = 1.5 V, V+ = 2.7 V

I COM = 5 mA

Room Full 305080Ωr DS(on)Match d Δr DS(on)V NO or V NC = 1.5 V Room 0.42r DS(on) Flatness f

r DS(on)Flatness V NO or V NC = 1 and 2 V

Room 48NO or NC Off Leakage Current g

I NO/NC(off)V NO or V NC = 1 V/2 V , V COM = 2 V/1 V Room Full - 100- 500051005000pA COM Off Leakage Current g I COM(off)V COM = 1 V/2 V, V NO or V NC = 2 V/1 V

Room Full - 100- 500051005000Channel-On Leakage Current g I COM(on)

V COM = V NO or V NC = 1 V/2 V

Room Full

- 200- 1000010

20010000

Digital Control Input Current

I INL or I INH

Full

1

μA

Dynamic Characteristics Turn-On Time t ON V NO or V NC = 1.5 V

Room

Full 50120200ns

Turn-Off Time

t OFF Room Full 2050120

Break-Before-Make Time t d Room 3

20Charge Injection Q INJ C L = 1 nF , V gen = 0 V, R gen = 0 ΩRoom 15

pC Off-Isolation

OIRR R L = 50 Ω, C L = 5 pF , f = 1 MHz

Room - 74dB Source Off Capacitance C S(off) f = 1 MHz Room 7pF

Channel-On Capacitance C D(on)

Room

32

Power Supply Power Supply Range V+ 2.7

12V Power Supply Current

I+

V+ = 3.3 V , V IN = 0 or 3.3 V

1

μA

Vishay Siliconix

DG9431

Notes:

a. Room = 25 °C, Full = as determined by the operating suffix.

b. Typical values are for design aid only, not guaranteed nor subject to production testing.

c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

d. Guarantee by design, nor subjected to production test.

e. V IN = input voltage to perform proper function.

f. Difference of min and max values.

g. Guraranteed by 5-V leakage testing, not production tested.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (V+ = 5 V)

Parameter Symbol Test Conditions

Unless Otherwise Specified V+ = 5 V , ± 10 %, V IN = 0.8 or 2.4 V e Temp a

D Suffix - 40 to 85 °C

Unit

Min c

Typ b

Max c

Analog Switch Analog Signal Range d V ANALOG Full 0

5V

Drain-Source On–Resistance r DS(on)V NO or V NC = 3.5 V , V+ = 4.5 V

I COM = 5 mA

Room Full 203050Ωr DS(on)Match d Δr DS(on)V NO or V NC = 1.5 V Room 0.42r DS(on) Flatness f

r DS(on)Flatness V NO or V NC = 1, 2 and 3 V Room 26NO or NC Off Leakage Current I NO/NC(off)V NO or V NC = 1 V/4 V , V COM = 4 V/1 V Room Full - 100- 5000101005000pA COM Off Leakage Current I COM(off)V COM = 1 V/4 V , V NO or V NC = 4 V/1 V

Room Full - 100- 500010

1005000Channel-On Leakage Current I COM(on)

V COM = V NO or V NC = 1 V/4 V

Room Full

- 200- 1000020010000

Digital Control Input Current

I INL or I INH

Full

1

μA

Dynamic Characteristics T urn-On Time t ON V NO or V NC = 3.0 V

Room

Full 3575150ns

T urn-Off Time

t OFF Room Full 2050100

Break-Before-Make Time t d Room 3

10Charge Injection Q INJ C L = 1 nF , V gen = 0 V , R gen = 0 ΩRoom 25

pC Off-Isolation

OIRR R L = 50 Ω, C L = 5 pF , f = 1 MHz

Room - 74dB NC and NO Capacitance C (off) f = 1 MHz Room - 7pF

Channel-On Capacitance C D(on)

Room

32

Power Supply Power Supply Range V+ 2.7

12V Power Supply Current

I+

V+ = 5.5 V , V IN = 0 or 5.5 V

1

μA

Vishay Siliconix

DG9431

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Leakage Current vs. Temperature

IN Off-Isolation vs. Frequency

r DS vs. V

COM

Vishay Siliconix

DG9431

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

DS COM

t ON /t OFF vs. Power Supply Voltage

Switching Time vs. Temperature

DG9431

Vishay Siliconix

TEST CIRCUITS

Figure 1. Switching Time

Figure 2. Break-Before-Make Interval

Figure 3. Charge Injection

Vishay Siliconix

DG9431

TEST CIRCUITS

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.sodocs.net/doc/3e6545537.html,/ppg?70831.

Figure 4. Off-Isolation

Figure 5. Channel Off/On Capacitance

Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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