2SK2330中文资料
2SK2330(L), 2SK2330(S)
Silicon N-Channel MOS FET
November 1996
Application
High speed power switching
Features
? Low on-resistance ? High speed switching ? No secondary breakdown
?
Suitable for Switching regulator, DC-DC converter
Outline
HDPAK
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
D
G
S
2SK2330(L), 2SK2330(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Ratings Unit Drain to source voltage V DSS 500V Gate to source voltage V GSS ±30V Drain current I D 15A Drain peak current
I D(pulse)*1
60A Body to drain diode reverse drain current I DR 15A Channel dissipation Pch*2100W Channel temperature Tch 150°C Storage temperature
Tstg
–55 to +150
°C
Notes 1.PW ≤ 10 μs, duty cycle ≤ 1 %
2.Value at Tc = 25 °C
2SK2330(L), 2SK2330(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage
V (BR)DSS 500——V I D = 10 mA, V GS = 0Gate to source breakdown voltage
V (BR)GSS ±30——V I G = ±100 μA, V DS = 0Gate to source leak current I GSS ——±10μA V GS = ±25 V, V DS = 0Zero gate voltage drain current I DSS ——250μA V DS = 400 V, V GS = 0Gate to source cutoff voltage
V GS(off)
2.0—
3.0V I D = 1 mA, V DS = 10 V Static drain to source on state resistance
R DS(on)—0.30.4?I D = 8 A
V GS = 10 V*1
Forward transfer admittance |y fs |813—S I D = 8 A
V DS = 10 V*1
Input capacitance
Ciss
—
2050
—
pF
V DS = 10 V V GS = 0f = 1 MHz
Output capacitance
Coss —600—pF Reverse transfer capacitance Crss —75—pF Turn-on delay time
t d(on)
—
30
—
ns
I D = 8 A V GS = 10 V R L = 3.75 ?
Rise time
t r —110—ns Turn-off delay time t d(off)—150—ns Fall time
t f —70—ns Body to drain diode forward voltage
V DF — 1.0—V I F = 15 A, V GS = 0Body to drain diode reverse recovery time t rr
—
500
—
μs
I F = 15 A, V GS = 0,diF / dt = 100 A / μs
Note
1.Pulse Test
See characteristic curves of 2SK1168.
2SK2330(L), 2SK2330(S)
4
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