Solar cell efficiency tables (Version 38)
RESEARCH:SHORT COMMUNICATION:ACCELERATED PUBLICATION
Solar cell ef?ciency tables(Version38)
Martin A.Green1*,Keith Emery2,Yoshihiro Hishikawa3,Wilhelm Warta4and Ewan D.Dunlop5 1ARC Photovoltaics Centre of Excellence,University of New South Wales,Sydney2052,Australia
2National Renewable Energy Laboratory,1617Cole Boulevard,Golden,CO80401,USA
3National Institute of Advanced Industrial Science and Technology(AIST),Research Center for Photovoltaics(RCPV),Central2, Umezono1-1-1,Tsukuba,Ibaraki305-8568,Japan
4Fraunhofer-Institute for Solar Energy Systems,Department of Solar Cells–Materials and Technology,Heidenhofstr.2,D-79110 Freiburg,Germany
5European Commission–Joint Research Centre,Renewable Energy Unit,Institute for Energy,Via E.Fermi2749,IT-21027Ispra (VA),Italy
ABSTRACT
Consolidated tables showing an extensive listing of the highest independently con?rmed ef?ciencies for solar cells and modules are presented.Guidelines for inclusion of results into these tables are outlined and new entries since January,2011 are reviewed.Copyright#2011John Wiley&Sons,Ltd.
KEYWORDS
solar cell efficiency;photovoltaic efficiency;energy conversion efficiency
*Correspondence
Martin A.Green,ARC Photovoltaics Centre of Excellence,University of New South Wales,Sydney2052,Australia.
E-mail:m.green@https://www.sodocs.net/doc/4e3068361.html,.au
Received23May2011
1.INTRODUCTION
Since January,1993,‘‘Progress in Photovoltaics’’has published six monthly listings of the highest con?rmed ef?ciencies for a range of photovoltaic cell and module technologies[1–3].By providing guidelines for the inclusion of results into these tables,this not only provides an authoritative summary of the current state-of-the-art but also encourages researchers to seek independent con?r-mation of results and to report results on a standardized basis.In a recent version of these Tables(Version33)[2], results were updated to the new internationally accepted reference spectrum(IEC60904-3,Ed.2,2008),where this was possible.
The most important criterion for inclusion of results into the Tables is that they must have been measured by a recognized test centre listed elsewhere[1].A distinction is made between three different eligible areas:total area, aperture area,and designated illumination area[1].‘‘Active area’’ef?ciencies are not included.There are also certain minimum values of the area sought for the different device types(above0.05cm2for a con-centrator cell,1cm2for a1-sun cell,and800cm2for a module)[1].
Results are reported for cells and modules made from different semiconductors and for sub-categories within each semiconductor grouping(e.g.,crystalline,polycrys-talline,and thin?lm).From Version36onwards,spectral response information is included when available in the form of a plot of the external quantum ef?ciency(EQE) versus wavelength,normalized to the peak measured value. Starting from the present version,current–voltage(IV) curves will also be included when possible.
2.NEW RESULTS
Highest con?rmed‘‘one sun’’cell and module results are reported in Tables I and II.Any changes in the Tables from those previously published[3]are set in bold type.In most cases,a literature reference is provided that describes either the result reported or a similar result.Table I summarizes the best measurements for cells and sub-modules while Table II shows the best results for modules. Table III contains what might be described as‘‘notable exceptions.’’While not conforming to the requirements to be recognized as a class record,the cells and modules in this Table have notable characteristics that will be of
PROGRESS IN PHOTOVOLTAICS:RESEARCH AND APPLICATIONS
Prog.Photovolt:Res.Appl.2011;19:565–572
Published online in Wiley Online Library(https://www.sodocs.net/doc/4e3068361.html,).DOI:10.1002/pip.1150 Copyright?2011John Wiley&Sons,Ltd.565
Table I.Con?rmed terrestrial cell and submodule ef?ciencies measured under the global AM1.5spectrum(1000W/m2)at
258C(IEC60904-3:2008,ASTM G-173-03global).
Classi?cation a Ef?c.b
(%)Area c
(cm2)
V oc
(V)
J sc
(mA/cm2)
FF d
(%)
Test Centre e
(and date)
Description
Silicon
Si(crystalline)25.0?0.5 4.00(da)0.70642.7f82.8Sandia(3/99)g UNSW PERL[13]
Si(multicrystalline)20.4?0.5 1.002(ap)0.66438.080.9NREL(5/04)g FhG-ISE[14]
Si(thin?lm transfer)19.1W0.4 3.983(ap)0.65037.8h77.6FhG-ISE(2/11)ISFH(43m m thick)[4]
Si(thin?lm submodule)10.5?0.394.0(ap)0.492i29.7i72.1FhG-ISE(8/07)g CSG Solar(1–2m m
on glass;20cells)[15]
III–V cells
GaAs(thin?lm)28.1W0.80.998(ap) 1.11129.4h85.9NREL(3/11)Alta Devices[5]
GaAs(multicrystalline)18.4?0.5 4.011(t)0.99423.279.7NREL(11/95)g RTI,Ge substrate[16]
InP(crystalline)22.1?0.7 4.02(t)0.87829.585.4NREL(4/90)g Spire,epitaxial[17]
Thin?lm chalcogenide
CIGS(cell)19.6?0.6j0.996(ap)0.71334.8k79.2NREL(4/09)NREL,CIGS on glass[18] CIGS(submodule)16.7?0.416.0(ap)0.661i33.6i75.1FhG-ISE(3/00)g U.Uppsala,4serial cells[19] CdTe(cell)16.7?0.5j 1.032(ap)0.84526.175.5NREL(9/01)g NREL,mesa on glass[20] Amorphous/nanocrystalline Si
Si(amorphous)10.1?0.3l 1.036(ap)0.88616.75f67.0NREL(7/09)Oerlikon Solar Lab,
Neuchatel[21]
Si(nanocrystalline)10.1?0.2m 1.199(ap)0.53924.476.6JQA(12/97)Kaneka(2m m on glass)[22] Photochemical
Dye-sensitized10.9W0.3n 1.008(da)0.73621.7h68.0AIST(1/11)Sharp[6]
Dye-sensitized(submodule)9.9?0.4n17.11(ap)0.719i19.4i,k71.4AIST(8/10)Sony,eight parallel cells[23] Organic
Organic polymer8.3?0.3n 1.031(ap)0.81614.46k70.2NREL(11/10)Konarka[24]
Organic(submodule) 3.5?0.3n208.4(ap)8.6200.84748.3NREL(7/09)Solarmer[25]
Multijunction devices
GaInP/GaAs/Ge32.0?1.5m 3.989(t) 2.62214.3785.0NREL(1/03)Spectrolab(monolithic) GaAs/CIS(thin?lm)25.8?1.3m 4.00(t)–––NREL(11/89)Kopin/Boeing(four
terminal)[26]
a-Si/nc-Si/nc-Si(thin?lm)12.4W0.7o 1.050(ap) 1.9368.9671.5NREL(3/11)United Solar[7]
a-Si/nc-Si(thin?lm cell)11.9?0.8p 1.227(ap) 1.34612.92k68.5NREL(8/10)Oerlikon Solar Lab,
Neuchatel[27]
a-Si/nc-Si(thin?lm
submodule)
11.7?0.4m,q14.23(ap) 5.462 2.9971.3AIST(9/04)Kaneka(thin?lm)[28] Organic(two-cell tandem)8.3?0.3n 1.087(ap) 1.7338.03k59.5FhG-ISE(10/10)Heliatek[29]
a CIGS,CuInGaSe2;a-Si,amorphous silicon/hydrogen alloy.
b Ef?c.,ef?ciency.
c(ap),aperture area;(t),total area;(da),designated illumination area.
d FF,?ll factor.
e FhG-ISE,Fraunhofer Institut fu¨r Solare Energiesysteme;JQA,Japan Quality Assurance;AIST,Japanese National Institute o
f Advanced Industrial Science and Technology.
f Spectral response reported in Version36of these Tables.
g Recalibrated from original measurement.
h Spectral response and current-voltage curve reported in present version of these Tables.
i Reported on a‘‘per cell’’basis.
j Not measured at an external laboratory.
k Spectral response reported in Version37of these Tables.
l Light soaked at Oerlikon prior to testing at NREL(1000h,1sun,508C).
m Measured under IEC60904-3Ed.1:1989reference spectrum.
n Stability not investigated.Refs.[30,31]review the stability of similar devices.
o Light soaked under100mW/cm2white light at508C for over1000h.
p Stabilized by1000h,1sun illumination at a sample temperature of508C.
q Stabilized by174h,1sun illumination after20h,5sun illumination at a sample temperature of508C.
566Prog.Photovolt:Res.Appl.2011;19:565–572?2011John Wiley&Sons,Ltd.
DOI:10.1002/pip Solar cell efficiency tables M.A.Green et al.
Table II.Con?rmed terrestrial module ef?ciencies measured under the global AM1.5spectrum(1000W/m2)at a cell temperature of
258C(IEC60904-3:2008,ASTM G-173-03global).
Classi?cation a Ef?c.b(%)Area c
(cm2)V oc
(V)
I sc(A)FF d
(%)
Test Centre
(and date)
Description
Si(crystalline)22.9?0.6778(da) 5.60 3.9780.3Sandia(9/96)e UNSW/Gochermann[32] Si(large crystalline)21.4?0.615780(ap)68.6 6.29378.4NREL(10/09)SunPower[33]
Si(multicrystalline)17.8W0.414920(ap)38.869.04f75.7ESTI(2/11)Q-Cells(60serial cells)[8] Si(thin-?lm polycrystalline)8.2?0.2661(ap)25.00.32068.0Sandia(7/02)e Paci?c Solar
(1–2m m on glass)[34] GaAs(crystalline)21.1W0.6921(ap)12.69 1.98f77.1NREL(4/11)Alta Devices[5]
CIGS15.7?0.59703(ap)28.247.254g72.5NREL(11/10)Miasole[35]
CIGSS(Cd free)13.5?0.73459(ap)31.2 2.1868.9NREL(8/02)e Showa Shell[36]
CdTe12.8W0.46687(ap)94.1 1.2771.4NREL(1/11)PrimeStar monolithic[9] a-Si/a-SiGe/a-SiGe(tandem)10.4?0.5h,i905(ap) 4.353 3.28566.0NREL(10/98)e USSC[37]
a CIGSS,CuInGaSSe;a-Si,amorphous silicon/hydrogen alloy;a-SiGe,amorphous silicon/germanium/hydrogen alloy.
b Ef?c.,ef?ciency.
c(ap),aperture area;(da),designated illumination area.
d FF,?ll factor.
e Recalibrated from original measurement.
f Spectral response and current–voltage curve reported in present version of these Tables.
g Spectral response reported in Version37of these Tables.
h Light soaked at NREL for1000h at508C,nominally1-sun illumination.
i Measured under IEC60904-3Ed.1:1989reference spectrum.
Table III.‘‘Notable Exceptions’’:‘‘Top ten’’con?rmed cell and module results,not class records measured under the global AM1.5 spectrum(1000W/m2)at258C(IEC60904-3:2008,ASTM G-173-03global).
Classi?cation a Ef?c.b
(%)Area c
(cm2)
V oc
(V)
J sc
(mA/cm2)
FF
(%)
Test Centre
(and date)
Description
Cells(silicon)
Si(MCZ crystalline)24.7?0.5 4.0(da)0.70442.083.5Sandia(7/99)d UNSW PERL,SEH MCZ
substrate[38]
Si(large crystalline)24.2?0.7155.1(t)0.72140.5e82.9NREL(5/10)Sunpower n-type CZ
substrate[39]
Si(large crystalline)23.0?0.6100.4(t)0.72939.680.0AIST(2/09)Sanyo HIT,n-type
substrate[40]
Si(large multicrystalline)19.5W0.4242.7(t)0.65239.0f76.7FhG ISE(3/11)Q-Cells,laser
?red contacts[8]
Cells(others)
GaInP/GaAs/GaInAs(tandem)35.8?1.50.880(ap) 3.01213.985.3AIST(9/09)Sharp,monolithic[41] CIGS(thin?lm)20.3?0.60.5015(ap)0.74035.4e77.5FhG-ISE(6/10)ZSW Stuttgart,
CIGS on glass[42]
CZTSS(thin?lm)9.7W0.30.4362(ap)0.51628.6f65.4NREL(8/09)IBM solution grown[10]
a-Si/nc-Si/nc-Si(tandem)12.5?0.7g0.27(da) 2.0109.1168.4NREL(3/09)United Solar stabilized[43] Dye-sensitized11.2?0.3h0.219(ap)0.73621.072.2AIST(3/06)d Sharp[44]
Luminescent submodule7.1?0.2h25(ap) 1.0088.84e79.5ESTI(9/08)ECN Petten,GaAs cells[45] a CIGS,CuInGaSe
2
;CZTSS,Cu2ZnSnS4ày Se y.
b Ef?c.,ef?ciency.
c(ap),aperture area;(t),total area;(da),designated illumination area.
d Recalibrated from original measurement.
e Spectral response reported in Version37o
f these Tables.
f Spectral response and current-voltage curve reported in the present version of these Tables.
g Light soaked under100mW/cm2white light at508C for1000h.
h Stability not investigated.
Prog.Photovolt:Res.Appl.2011;19:565–572?2011John Wiley&Sons,Ltd. DOI:10.1002/pip 567
M.A.Green et al.Solar cell ef?ciency tables
interest to sections of the photovoltaic community,with entries based on their signi?cance and timeliness.
To ensure discrimination,Table III is limited to nominally10entries with the present authors having voted for their preferences for inclusion.Readers who have suggestions of results for inclusion into this Table are welcome to contact any of the authors with full details. Suggestions conforming to the guidelines will be included on the voting list for a future issue.
Table IV shows the best results for concentrator cells and concentrator modules(a smaller number of‘‘notable exceptions’’for concentrator cells and modules addition-ally is included in Table IV).
Ten new results are reported in the present version of these Tables.
The?rst new result in Table I is for a layer transfer, 43m m thick silicon solar cell with19.1%ef?ciency measured for a4cm2cell fabricated by the Institute for Solar Energy Research,Hamelin(ISFH)[4]and measured by the Fraunhofer Institute for Solar Energy Systems(FhG-ISE),representing a large improvement on the previously best result of16.7%for a cell of this type.
The second new result in Table I is an outright record for solar conversion by any single-junction photovoltaic device,following on from the27.6%result reported in the previous version of these Tables[3].An ef?ciency of 28.1%has been measured at the National Renewable Energy Laboratory(NREL)for a1cm2thin-?lm GaAs device fabricated by Alta Devices,Inc.Alta Devices is a Santa Clara based‘‘start-up’’seeking to develop low-cost, 30%ef?cient solar modules[5].
A third new result in Table I is for a dye-sensitized cell with ef?ciency of10.9%reported for a1cm2cell fabricated by Sharp[6]and measured by the Japanese National Institute of Advanced Industrial Science and Technology(AIST).
The?nal new result in Table I is for a small area (1.05cm2)triple junction amorphous/nanocrystalline sili-con solar cell(a-Si/nc-Si/nc-Si)fabricated by United Solar (USlr)[7]where a stabilized ef?ciency of12.4%has been measured by NREL.
Following a vigorous burst of activity in the multi-crystalline silicon module area reported in the three previous versions of these Tables,where?ve groups exceeded the previous record for module ef?ciency over an 18month period,one of these groups has done even better. In Table II,a new ef?ciency record of17.8%is reported for
a large(1.5m2aperture area)module fabricated by Q-Cells
[8]and measured by the European Solar Test Installation, Ispra(ESTI).
Also reported in Table II is a record result for a thin-?lm GaAs module,with an ef?ciency of21.1%reported for a 0.92m2module fabricated by Alta Devices[5]and measured by NREL.With the recent improvement in GaAs cell performance reported in Table I,this ef?ciency might also be expected to improve rapidly in the future.
Table IV.Terrestrial concentrator cell and module ef?ciencies measured under the ASTM G-173-03direct beam AM1.5spectrum at
a cell temperature of258C.
Classi?cation Ef?c.a
(%)Area b
(cm2)
Intensity c
(suns)
Test Centre
(and date)
Description
Single Cells
GaAs29.1?1.3d,e0.0505(da)117FhG-ISE(3/10)Fraunhofer ISE
Si27.6?1.0f 1.00(da)92FhG-ISE(11/04)Amonix back-contact[46] Multijunction cells
GaInP/GaAs/GaInNAs
(2-terminal)
43.5W2.60.3124(ap)418NREL(3/11)Solar Junction,triple cell[11]
GaInP/GaInAs/Ge(2-terminal)41.6?2.5e0.3174(da)364NREL(8/09)Spectrolab,lattice-matched[47] Submodules
GaInP/GaAs;GaInAsP/GaInAs38.5?1.9g0.202(ap)20NREL(8/08)DuPont et al.,split spectrum[48] GaInP/GaAs/Ge27.0?1.5h34(ap)10NREL(5/00)ENTECH[49]
Modules
Si20.5?0.8d1875(ap)79Sandia(4/89)i Sandia/UNSW/ENTECH(12cells)[50]‘‘Notable Exceptions’’
Si(large area)21.7?0.720.0(da)11Sandia(9/90)i UNSW laser grooved[51]
a Ef?c.,ef?ciency.
b(da),designated illumination area;(ap),aperture area.
c One sun corresponds to direct irradiance of1000W/m2.
d Not measured at an external laboratory.
e Spectral response reported in Version36o
f these Tables.
f Measured under a low aerosol optical depth spectrum similar to ASTM G-173-03direct[52].
g Spectral response reported in Version37of these Tables.
h Measured under old ASTM E891-87reference spectrum.
i Recalibrated from original measurement.
568Prog.Photovolt:Res.Appl.2011;19:565–572?2011John Wiley&Sons,Ltd.
DOI:10.1002/pip Solar cell efficiency tables M.A.Green et al.
The ?nal new result in Table II is a new record for a thin-?lm CdTe module.An ef?ciency of 12.8%was measured by NREL for a 0.7m 2module fabricated by PrimeStar Solar [9].
The ?rst new result in Table III relates to an ef?ciency increase to 19.5%for a large 243cm 2multicrystalline silicon cell fabricated by Q-Cells [8]and measured by FhG-ISE.The cell is described as using screen-printed contacts with a dielectrically passivated rear,with local rear contacts formed by laser ?ring.
Another new result in Table III is the improvement of a small area (0.45cm 2)Cu 2ZnSnS 4ày Se y (CZTSS)cell fabricated by IBM T.J.Watson Research Center [10]to 9.7%ef?ciency as measured by NREL.This cell is smaller than the 1cm 2size required for classi?cation as an outright record.
Yet another new result is reported in Table IV for a high performance concentrator cell.This is a new ef?ciency record for any photovoltaic cell with 43.5%ef?ciency measured by NREL at 418suns concentration (418kW/m 2irradiance)for a 0.3cm 2cell fabricated by Solar Junction using a proprietary approach [11].This cell maintained ef?ciency above 43%to 1000suns concentration.
The external quantum ef?ciencies (EQE),in some cases normalized to the peak EQE values,for the new GaAs cell and module results of Tables I and II are shown in Figure 1a as well as the response for the dye-sensitized cell of Table I and the CdTe module of Table II.Figure 1b shows the EQE of the new silicon cell and modules results in the present issue of these Tables together with the new CZTSS result (normalized)of Table III.The wavelength at which the EQE drops to 50%of its peak value at long wavelength provides a reasonable estimate of the cell bandgap,estimated in this way as 1.27eV for the CZTSS cell.The bandgaps of CZTSS and CZTS are commonly quoted as circa 1.0and 1.5eV ,respectively [12],suggesting a mid-range composition for the record cell.
Figure 2shows the current density–voltage (JV )curves for the corresponding devices.For the case of modules and tandem cells,the measured current–voltage data has been reported on a ‘‘per cell’’basis (voltage has been divided by the number of cells in series per series string,while
current
Figure 1.(a)EQE for the new GaAs cell and module results in this issue,as well as for the new dye-sensitized cell and the new CdTe module results;and (b)EQE for the new silicon cell and module entries in this issue plus for the new CZTSS cell result
(?normalized
data).
Figure 2.(a)Current density–voltage (JV )curve for the new GaAs cell and module results in this issue,as well as for the new dye-sensitized cell and the new CdTe module results;and (b)JV curves for the new silicon cell and module entries in this issue plus for the new CZTSS cell result (?cells per series string
estimated).
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M.A.Green et al.Solar cell ef?ciency tables
has been multiplied by this quantity and divided by the cell or module area).In some cases the number of cells per series string has been estimated.
3.DISCLAIMER
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