Q67040-S4751中文资料
Cool MOS?=Power Transistor ?=New revolutionary high voltage technology
? Worldwide best R DS(on) in TO 220
? Ultra low gate charge
?=Improved periodic avalanche rating
? Extreme d v/d t rated
Product Summary
V DS @ T jmax650V R DS(on)0.19?I D20A
P-TO220-3-1
G,1
D,2
S,3
Maximum Ratings,at T j = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current T C=25°C
T C=100°C I D
20
13
A
Pulsed drain current1)
T C=25°C
I D puls40
Avalanche energy, single pulse
I D = 10 A, V DD = 50 V
E AS690mJ
Avalanche energy (repetitive, limited by T jmax)
I D = 20 A, V DD = 50 V
E AR1
Avalanche current (repetitive, limited by T jmax)I AR20A Reverse diode d v/d t
I S=20A, V DS d v/d t6kV/μs Gate source voltage V GS±20V Power dissipation T C=25°C P tot208W Operating and storage temperature T j , T stg-55... +150°C Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.typ.max. Thermal Characteristics Thermal resistance, junction - case R thJC --0.6K/W Thermal resistance, junction - ambient (Leaded and through-hole packages) R thJA--62 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2)R thJA - - - 35 62 - Static Characteristics, at T j = 25 °C, unless otherwise specified Drain-source breakdown voltage V GS = 0 V, I D = 0.25 mA V(BR)DSS600--V Gate threshold voltage, V GS = V DS I D = 1 mA, T j = 25 °C V GS(th) 3.5 4.5 5.5 Zero gate voltage drain current, V DS=V DSS V GS = 0 V, T j = 25 °C V GS = 0 V, T j = 150 °C I DSS - - 0.5 - 25 250 μA Gate-source leakage current V GS = 20 V, V DS = 0 V I GSS--100nA Drain-source on-state resistance V GS = 10 V, I D = 13 A R DS(on)-0.160.19? 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain connection. PCB is vertical without blown air. Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min.typ.max. Dynamic Characteristics Transconductance g fs V DS≥2*I D*R DS(on)max , I D=13A -12-S Input capacitance C iss V GS=0V, V DS=25V, f=1MHz -3000-pF Output capacitance C oss-1170-Reverse transfer capacitance C rss-28- Turn-on delay time t d(on)V DD=350V, V GS=10V, I D=20A, R G=5.7?-120-ns Rise time t r-25- Turn-off delay time t d(off)-140210 Fall time t f-3045 Gate Charge Characteristics Gate to source charge Q gs V DD=350V, I D=20A-21-nC Gate to drain charge Q gd-47- Total gate charge Q g V DD=350V, I D=20A, V GS=0 to 10V -79103 Reverse Diode Inverse diode continuous forward current I S T C=25°C--20A Inverse diode direct current,pulsed I SM--40 Inverse diode forward voltage V SD V GS=0V, I F=20A-1 1.2V Reverse recovery time t rr V R=100V, I F=l S, d i F/d t=100A/μs -610-ns Reverse recovery charge Q rr-12-μC Power dissipation P tot = f (T C) P t o t Drain current I D = f (T C ) parameter: V GS≥ 10 V SPP20N60S5 I D Safe operating area I D=f (V DS) parameter: D=0.01, T =25°C I D Transient thermal impedance Z thJC = f (t p) parameter : D = t/T Typ. output characteristic I D = f (V DS) Parameter: V GS, T j = 25 °C I D Drain-source on-resistance R DS(on) = f (T j) parameter : I D = 13 A, V GS = 10 V SPP20N60S5 R D S ( o n ) Typ. capacitances C = f (V DS) parameter: V GS=0 V, f=1 MHz 10 10 10 10 10 10 p F Typ. transfer characteristics I D= f ( V GS ) V DS ≥ 2 x I D x R DS(on)max I D Avalanche Energy E AS = f (T j) par.: I D = 10 A, V DD = 50 V mJ 750 E A S Avalanche SOA I AR = f (t AR) par.: T j≤ 150 °C 4 I A R Drain-source breakdown voltage V(BR)DSS = f (T j) SPP20N60S5 V ( B R ) D S S Gate threshold voltage V GS(th) = f (T j) parameter: V GS = V DS, I D = 1 mA V G S ( t h ) Forward characteristics of reverse diode I F = f (V SD) parameter: T , t p = 10 μs I F Typ. gate charge V GS = f (Q Gate) parameter: I Dpuls = 20 A V G S Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München ? Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.