IXFH10N90中文资料
Symbol Test Conditions
Maximum Ratings
V DSS T J = 25°C to 150°C
900V V DGR T J = 25°C to 150°C; R GS = 1 M W 900V V GS Continuous ±20V V GSM Transient ±30V I D25T C = 25°C
10N9010A 12N9012A 13N9013A I DM T C = 25°C,
10N9040A pulse width limited by T JM 12N9048A 13N9013A I AR
T C = 25°C
10N9010A 12N9012A 13N90
13A E AR T C = 25°C
30mJ dv/dt I S ￡ I
DM , di/dt ￡ 100 A/m s, V DD ￡ V DSS ,5V/ns T J ￡ 150°C, R G = 2 W P D T C = 25°C
300
W T J -55 ... +150
°C T JM 150
°C T stg -55 ... +150
°C T L 1.6 mm (0.062 in.) from case for 10 s 300
°
C
M d Mounting torque
1.13/10Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.typ.max.
V DSS V GS = 0 V, I D = 3 mA 900V V GS(th)V DS = V GS , I D = 4 mA 2.0
4.5V I GSS V GS = ±20 V DC , V DS = 0±100nA I DSS V DS = V DSS T J
=25°C 25m A V GS = 0 V
T J =125°C
1mA R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
10N90 1.1W 12N900.9W 13N90
0.8
W
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
HiPerFET TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate, D = Drain,S = Source,
TAB = Drain
Features
l International standard packages l Low R DS (on) HDMOS TM process
l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS)rated
l Low package inductance -easy to drive and to protect l
Fast intrinsic Rectifier
Applications
l DC-DC converters
l Synchronous rectification l Battery chargers
l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control
l Temperature and lighting controls l
Low voltage relays
Advantages
l Easy to mount with 1 screw (TO-247)(isolated mounting screw hole)l Space savings l
High power density
D
G
V DSS
I D25R DS(on)IXFH/IXFM
10
N90900 V 10 A 1.1 W IXFH/IXFM
12
N90900 V 12 A 0.9 W IXFH13
N90
900 V
13 A
0.8 W
t rr ￡ 250 ns
91530G (3/98)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.typ.max.
g fs V DS = 10 V; I D = 0.5 ? I D25, pulse test
6
12S C iss 4200
pF C oss V GS
= 0 V, V DS = 25 V, f = 1 MHz
315pF C rss 90pF t d(on)1850ns t r V GS
= 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
1250ns t d(off)R G = 2 W (External)
51100ns t f 1850ns Q g(on)123
155nC
Q gs
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
2745nC Q gd 49
80nC R thJC 0.42K/W R thCK
0.25
K/W
Source-Drain Diode Characteristic Values
(T J = 25°C, unless otherwise specified)
Symbol Test Conditions min.typ.max.I S
V GS = 0 V
10N9010A 12N9012A 13N9013A I SM
Repetitive;
10N9040A pulse width limited by T JM
12N9048A 13N90
52A V SD I F = I S , V GS = 0 V,
1.5V Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
t rr T J
=25°C 250ns T J =125°C 400ns Q RM T J
=25°C 1m C T J =125°C 2m C I RM
T J
=25°C 10A T J =125°C
15
A
I F = I S
-di/dt = 100 A/m s,V R = 100 V
TO-247 AD (IXFH) Outline
https://www.sodocs.net/doc/6512102093.html,limeter
Inches Min.Max.Min.Max.A 19.8120.320.7800.800B 20.8021.460.8190.845C 15.7516.260.6100.640D 3.55 3.650.1400.144E 4.32 5.490.1700.216F 5.4 6.20.2120.244G 1.65 2.130.0650.084H
- 4.5-0.177J 1.0 1.40.0400.055K 10.811.00.4260.433L 4.7 5.30.1850.209M 0.4
0.8
0.0160.031N
1.5
2.49
0.0870.102
https://www.sodocs.net/doc/6512102093.html,limeter Inches Min.Max.Min.Max.A 38.6139.12 1.520 1.540
B 19.4319.94-0.785
C 6.409.140.2520.360
D 0.97 1.090.0380.043
E 1.53 2.920.0600.115
F 30.15BSC 1.187BSC
G 10.6711.170.4200.440
H 5.21 5.710.2050.225J 16.6417.140.6550.675K 11.1812.190.4400.480Q 3.84 4.190.1510.165R 25.1625.900.991 1.020
Fig. 1Output Characteristics
Fig. 2Input Admittance
Fig. 5Drain Current vs.
Fig. 6Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
Fig. 3R DS(on) vs. Drain Current
Fig. 4Temperature Dependence
of Drain to Source Resistance
T J - Degrees C
-50
-250255075100125150
B V /V G (t h ) - N o r m a l i z e d
0.50.6
0.70.80.91.01.1
1.2BV DSS
V GS(th)
T C - Degrees C -50
-250
25
50
75
100125150
I D - A m p e r e s
0246810121416
18
20T J - Degrees C
-50
-250255075100125150
R D S (o n ) - N o r m a l i z e d
0.50
0.75
1.001.251.501.75
2.002.25
2.50I D - Amperes 0
5
10
152025
R D S (o n ) - N o r m a l i z e d
0.9
1.01.11.2
1.31.4
1.5
V GS - Volts
012345678910
I D - A m p e r e s
246810121416
1820V DS - Volts 05101520I D - A m p e r e s
24681012141618206V
7V
V GS = 10V
5V
T J = 25°
C
Fig.7Gate Charge Characteristic Curve
Fig.8Forward Bias Safe Operating Area
Fig.9Capacitance Curves
Fig.10Source Current vs. Source
to Drain Voltage
Fig.11 Transient Thermal Impedance
V DS - Volts
1
10
100
1000
I D - A m p e r e s
0.1
1
10Gate Charge - nCoulombs
25
50
75
100
125
150
V G E - V o l t s
02468
10V SD - Volts
0.0
0.20.40.60.8 1.0 1.2 1.4
I D - A m p e r e s
024********
1618V CE - Volts 0
5
10
15
20
25
C a p a c i t a n c e - p F
05001000150020002500300035004000
4500Pulse Width - Seconds
0.00001
0.00010.0010.010.1110
T h e r m a l R e s p o n s e - K /W
0.001
0.010.1
1
C rss
C
oss
C iss
f = 1 MHz V DS = 25V