SMF13A中文资料

Document Number https://www.sodocs.net/doc/6014347271.html,

17249

Surface Mount ESD Protection Diodes

Features

?For surface mounted applications ?Low-profile package

?Optimized for LAN protection applications ?

Ideal for ESD protection of data lines in accordance with IEC 61000-4-2 (IEC801-2) ?Ideal for EFT protection of data lines in accordance with IEC 61000-4-4 (IEC801-4) ?IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) ?Low incremental surge resistance, excellent clamping capability ?200 W peak pulse power capability with a 10/1000 μs waveform, repetition rate (duty cycle): 0.01 % ?Very fast response time

?High temperature soldering guaranteed:260°C/ 10 seconds at terminals ?Lead (Pb)-free component

?Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Mechanical Data

Case: JEDEC DO-219AB (SMF ?) Plastic case Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

Polarity:The band denotes the cathode, which is positive with respect to the anode under normal TVS operation

Mounting Position: Any Weight: approx. 15 mg

Packaging Codes/Options:

GS18 / 10 k per 13 " reel (8 mm tape), 50 k/box GS08 / 3 k per 7 " reel (8 mm tape), 30 k/box

Absolute Maximum Ratings

Ratings at 25°C, ambient temperature unless otherwise specified

1)

Non-repetitive current pulse and derated above T A = 25°C

Thermal Characteristics

Ratings at 25°C, ambient temperature unless otherwise specified

2) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( ≥ 40 μm thick)

Parameter

T est condition

Symbol Value Unit Peak pulse power dissipation 10/1000 μs waveform 1)P PPM 200W 8/20 μs waveform 1)P PPM 1000W Peak pulse current 10/1000 μs waveform 1)I PPM next Table A Peak forward surge current

8.3 ms single half sine-wave

I FSM

20

A

Parameter

T est condition

Symbol Value Unit Thermal resistance 2)

R thJA 180K/W Operation junction and storage temperature range

T stg , T J

- 55 to + 150

°C

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Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified. V F = 3.5 V at I F = 12 A (uni-directional only)1) Pulse test t p

≤ 5.0 ms

2)

Surge current waveform 10/1000 μs

3) All terms and symbols are consistent with ANSI/IEEE C62.35

Partnumber

Marking Code UNI

Breakdown Voltage 1)

Test Current

Stand-off Voltage

Maximum Reverse Leakage Maximum Peak Pulse Surge Current 2,3)

Maximum Clamping Voltage

Junction Capacitance

V (BR)

@ I T

V WM

@ V WM

I D I PPM

@ I PPM V C

C j @ V R = 0 V, f = 1 MHz

V mA V μA A

V pF min

typ

SMF5V0A AE 6.4010 5.040021.79.21030SMF6V0A AG 6.6710 6.040019.410.31010SMF6V5A AK 7.2210 6.525017.911.2850SMF7V0A AM 7.78107.010016.712.0750SMF7V5A AP 8.33 1.07.55015.512.9730SMF8V0A AR 8.89 1.08.02514.713.6670SMF8V5A AT 9.44 1.08.51013.914.4660SMF9V0A AV 10.0 1.09.0 5.013.515.4620SMF10A AX 11.1 1.010 2.511.817.0570SMF11A AZ 12.2 1.011 2.511.018.2460SMF12A BE 13.3 1.012 2.510.119.9440SMF13A BG 14.4 1.013 1.09.321.5420SMF14A BK 15.6 1.014 1.08.623.2370SMF15A BM 16.7 1.015 1.08.224.4350SMF16A BP 17.8 1.016 1.07.726.0340SMF17A BR 18.9 1.017 1.07.227.6310SMF18A BT 20.0 1.018 1.0 5.829.2305SMF20A BV 22.2 1.020 1.0 6.232.4207SMF22A BX 24.4 1.022 1.0 5.635.5265SMF24A BZ 26.7 1.024 1.0 5.138.9240SMF26A CE 28.9 1.026 1.0 4.842.1225SMF28A CG 31.1 1.028 1.0 4.445.4210SMF30A CK 33.3 1.030 1.0 4.148.4205SMF33A CM 36.7 1.033 1.0 3.853.3190SMF36A CP 40.0 1.036 1.0 3.458.1180SMF40A CR 44.4 1.040 1.0 3.164.5165SMF43A CT 47.8 1.043 1.0 2.969.4160SMF45A CV 50.0 1.045 1.0 2.872.7155SMF48A CX 53.3 1.048 1.0 2.677.4150SMF51A

CZ

56.7

1.0

51

1.0

2.4

82.4

145

Document Number https://www.sodocs.net/doc/6014347271.html,

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Figure 1. Peak Pulse Power Rating

Figure 2. Pulse Derating Curve

Figure 3. Pulse Waveform

P P P M -P e a k P u l s e P o w e r (k W )

0.1

1

10

0.1μ s 1.0μ s 10μ s t d -Pulse Width (sec.)

100μ s 1.0ms 10ms

17250

25

50

75

100

0752550100125150175200

P e a k P u l s e P o w e r (P P P )o r C u r r e n t (I P P M )D e r a t i n g i n P e r c e n t a g e ,%

T A -Ambient Temperature (°C)

17251

I P P M -P e a k P u l s e C u r r e n t ,%I R S M

2.0

t -Time (ms)

17252

Package Dimensions in mm (Inches)

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Blistertape for SMF

Document Number https://www.sodocs.net/doc/6014347271.html,

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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