SB5H90-E354;SB5H100-E354;SB5H100-E373;SB5H90-E373;SB5H1004;中文规格书,Datasheet资料

Document Number: 88722For technical questions within your region, please contact one of the following:https://www.sodocs.net/doc/7a8222033.html,

High-Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

SB5H90, SB5H100

Vishay General Semiconductor

FEATURES

?Guardring for overvoltage protection

?Low power losses and high efficiency ?Low forward voltage drop ?Low leakage current

?High forward surge capability ?High frequency operation

?Solder dip 275 °C max. 10 s, per JESD 22-B106?AEC-Q101 qualified

?Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in middle voltage high frequency inverters,freewheeling, dc-to-dc converters, and polarity protection applications.

MECHANICAL DATA

Case: DO-201AD

Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

PRIMARY CHARACTERISTICS

I F(AV) 5.0 A V RRM 90 V, 100 V I FSM 200 A V F 0.70 V I R 200 μA T J max.

175 °C

DO-201AD

MAXIMUM RATINGS (T A = 25°C unless otherwise noted)

PARAMETER

SYMBOL SB5H90SB5H100UNIT Maximum repetitive peak reverse voltage V RRM 90100V Working peak reverse voltage V RWM 90100V Maximum DC blocking voltage

V DC 90

100

V Maximum average forward rectified current at T C = 80 °C I F(AV) 5.0A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load

I FSM 200A Peak repetitive reverse surge current at t p = 2.0 μs, 1 kHz I RRM 1.0A Storage temperature range

T STG - 55 to + 175

°C Maximum operating junction temperature

T J

175

°C

https://www.sodocs.net/doc/7a8222033.html, For technical questions within your region, please contact one of the following:Document Number: 88722

SB5H90, SB5H100

Vishay General Semiconductor

Notes

(1)Pulse test: 300 μs pulse width, 1 % duty cycle (2)Pulse test: Pulse width ≤ 40 ms

Note

(1)

P.C.B. mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

Note

(1)AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(T A = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL SB5H90 SB5H100 U NIT Maximum instantaneous forward voltage

I F = 5.0 A

T A = 25 °C V F (1)

0.80V T A = 125 °C 0.70

Maximum reverse current at rated V R

T A = 25 °C I R (2)

200μA T A = 125 °C

10

mA

THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)

PARAMETER

SYMBOL SB5H90

SB5H100

UNIT Maximum thermal resistance

R θJA (1)25°C/W

R θJL (1)

8

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g)

PPREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

SB5H100-E3/54 1.154140013" diameter paper tape and reel

SB5H100-E3/73 1.1731000Ammo pack packaging SB5H100HE3/54 (1) 1.154140013" diameter paper tape and reel

SB5H100HE3/73 (1) 1.1

73

1000

Ammo pack packaging

Document Number: 88722For technical questions within your region, please contact one of the following:https://www.sodocs.net/doc/7a8222033.html,

SB5H90, SB5H100

Vishay General Semiconductor

Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Transient Thermal Impedance

Fig. 6 - Typical Junction Capacitance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

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Disclaimer

ALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Material Category Policy

Vishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-121Document Number: 91000

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VISHAY-GENERAL-SEMICONDUCTOR

SB5H90-E3/54SB5H100-E3/54SB5H100-E3/73 SB5H90-E3/73SB5H100/4