ICS8312AYIT中文资料

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

G ENERAL D ESCRIPTION

The ICS8312I is a low skew, 1-to-12 LVCMOS /LVTTL Fanout Buffer and a member of the

HiPerClock S ? f amily of High Performance Clock Solutions from ICS. The ICS8312I single ended clock input accepts LVCMOS or LVTTL input lev-els. The low impedance LVCMOS outputs are designed to drive 50? series or parallel terminated transmission lines. The effective fanout can be increased from 12 to 24 by utilizing the ability of the outputs to drive two series terminated lines.

The ICS8312I is characterized at full 3.3V, 2.5V, and 1.8V , or mixed 3.3V core/2.5V , 3.3V core/1.8V and 2.5V core/1.8V out-put operating supply modes. Guaranteed output and part-to-part skew characteristics along with the 1.8V output capa-bilities makes the ICS8312I ideal for high performance, single ended applications that also require a limited output voltage.

B LOCK D IAGRAM P IN A SSIGNMENT

F EATURES

?12 LVCMOS / LVTTL outputs ?LVCMOS / LVTTL clock input ?Maximum output frequency: 250MHz ?Output skew: 160ps (maximum)?Operating supply modes: Core/Output

3.3V/3.3V 2.5V/2.5V 1.8V/1.8V 3.3V/2.5V 3.3V/1.8V 2.5V/1.8V ?-40°C to 85°C ambient operating temperature

32 31 30 29 28 27 26 25

9 10 11 12 13 14 15 1612345678

2423222120191817

Q4V DDO Q5GND Q6V DDO Q7GND

GND V DD

CLK_EN

CLK GND OE V DD GND

GND

Q8

V DDO

Q9

GND

Q10

V DDO

Q11

GND

Q3

V DDO

Q2

GND

Q1

V DDO

Q0

ICS8312I

32-Lead LQFP

7mm x 7mm x 1.4mm body package

Y Pacakge T op View

CLK_EN CLK

OE

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

T ABLE 1. P IN D ESCRIPTIONS

T ABLE 2. P IN C HARACTERISTICS

T ABLE 3A. O UTPUT E NABLE AND C LOCK E NABLE F UNCTION T ABLE

T ABLE 3B. C LOCK I NPUT F UNCTION T ABLE

r e b m u N e m a N e p y T n

o i t p i r c s e D ,21,8,5,1,12,71,6192,52D N G r e w o P .

d n u o r g y l p p u s r

e w o P 7

,2V D D r e w o P .

s n i p y l p p u s e r o C 3N E _K L C t u p n I p

u l l u P .

s t u p t u o k c o l c g n i l b a s i d d n a g n i l b a n e r o f l o r t n o c s u o n o r h c n y S .

s l e v e l e c a f r e t n i L T T V L /S O M C V L 4K L C t u p n I n w o d l l u P .

s l e v e l e c a f r e t n i L T T V L /S O M C V L .t u p n i k c o l C 6

E

O t

u p n I p

u l l u P s

t u p t u o f o g n i l b a s i d d n a g n i l b a n e s l o r t n o C .e l b a n e t u p t u O .

s l e v e l e c a f r e t n i L T T V L /S O M C V L .11Q u r h t 0Q ,51,31,11,9,22,02,81,82,62,4223,03,8Q ,9Q ,01Q ,11Q ,

5Q ,6Q ,7Q ,2Q ,3Q ,4Q 0Q ,1Q t u p t u O .

s l e v e l e c a f r e t n i L T T V L /S O M C V L .s t u p t u o 11Q u r h t 0Q ,

91,41,011

3,72,32V O

D D r e w o P .s n i p y l p p u s t u p t u O :

E T O N p u l l u P d n a n w o d l l u P .

s e u l a v l a c i p y t r o f ,s c i t s i r e t c a r a h C n i P ,2e l b a T e e S .s r o t s i s e r t u p n i l a n r e t n i o t r e f e r s

t u p n I s

t u p t u O E O N

E _K L C K L C 11Q :0Q 110W O L 1

1

1

H

G I H l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m

u m i x a M s t i n U C N I e

c n a t i c a p a C t u p n I 4F p C D P e c n a t i c a p a C n o i t a p i s s i D r e w o P )

t u p t u o r e p (V O D D V 564.3=91F p V O D D V 526.2=81F p V O D D V

2=6

1F p R P U L L U P r o t s i s e R p u l l u P t u p n I 15K ?R N W O D L L U P r

o t s i s e R n w o d l l u P t u p n I 15K ?R T

U O e

c n a

d

e p m I t u p t u O V O D D %

5±V 3.3=7?V O D D %5±V 5.2=7?V O D D V 2.0±V 8.1=0

1?

s t u p n I l o r t n o C t u p t u O E O N

E _K L C 11Q :0Q 0X Z -i H 10W O L 1

1

t

u p n i K L C s w o l l o F

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

T ABLE 4A. P OWER S UPPLY DC C HARACTERISTICS , V DD = V DDO = 3.3V±5%, T A = -40°C TO 85°C

l o b m y S r

e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l a c i p y T m u m i x a M s t i n U V D D e g a t l o V y l p p u S e r o C 531.33.3564.3V V O D D e g a t l o V y l p p u S t u p t u O 5

31.33

.3564.3V I D D t n e r r u C y l p p u S r e w o P 01A μI O

D D t

n e r r u C y l p p u S t u p t u O 0

1A

μT ABLE 4B. P OWER S UPPL Y DC C HARACTERISTICS , V DD = V DDO = 2.5V±5%, T A = -40°C TO 85°C

l o b m y S r

e t e m a r a P s n o i t i d n o C t s e T m u m i n i M l a c i p y T m u m i x a M s t i n U V D D e g a t l o V y l p p u S e r o C 573.25.2526.2V V O D D e g a t l o V y l p p u S t u p t u O 5

73.25

.2526.2V I D D t n e r r u C y l p p u S r e w o P 01A μI O D D t n e r r u C y l p p u S t u p t u O 0

1A μT ABLE 4C. P OWER S UPPLY DC C HARACTERISTICS , V DD = V DDO = 1.8V±0.2V , T A = -40°C TO 85°C

l o b m y S r

e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l a c i p y T m

u m i x a M s t i n U V D D e g a t l o V y l p p u S e r o C 6.18.10.2V V O D D e g a t l o V y l p p u S t u p t u O 6

.18

.10.2V I D D t n e r r u C y l p p u S r e w o P 01A μI O D D t n e r r u C y l p p u S t u p t u O 0

1A μA BSOLUTE M AXIMUM R ATINGS

Supply Voltage, V DD 4.6V

Inputs, V I -0.5V to V DD + 0.5 V Outputs, V O

-0.5V to V DDO + 0.5V Package Thermal Impedance, θJA 47.9°C/W (0 lfpm)Storage Temperature, T STG

-65°C to 150°C

NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions be-yond those listed in the DC Characteristics or AC Character-istics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.

T ABLE 4D. P OWER S UPPL Y DC C HARACTERISTICS , V DD = 3.3V±5%, V DDO = 2.5V±5%, T A = -40°C TO 85°C

l o b m y S r

e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l a c i p y T m u m i x a M s t i n U V D D e g a t l o V y l p p u S e r o C 531.33.3564.3V V O D D e g a t l o V y l p p u S t u p t u O 5

73.25

.2526.2V I D D t n e r r u C y l p p u S r e w o P 01A μI O

D D t

n e r r u C y l p p u S t u p t u O 0

1A

μT ABLE 4E. P OWER S UPPLY DC C HARACTERISTICS , V DD = 3.3V±5%, V DDO = 1.8V±0.2V , T A = -40°C TO 85°C

l o b m y S r

e t e m a r a P s n o i t i d n o C t s e T m u m i n i M l a c i p y T m u m i x a M s t i n U V D D e g a t l o V y l p p u S e r o C 531.33.3564.3V V O D D e g a t l o V y l p p u S t u p t u O 6

.18

.10.2V I D D t n e r r u C y l p p u S r e w o P 01A μI O D D t n e r r u C y l p p u S t u p t u O 0

1A μT ABLE 4F. P OWER S UPPL Y DC C HARACTERISTICS , V DD = 2.5V±5%, V DDO = 1.8V±0.2V , T A = -40°C TO 85°C

l o b m y S r

e t e m a r a P s

n o i t i d n o C t s e T m u m i n i M l a c i p y T m u m i x a M s t i n U V D D e g a t l o V y l p p u S e r o C 573.25.2526.2V V O D D e g a t l o V y l p p u S t u p t u O 6

.18

.10.2V I D D t n e r r u C y l p p u S r e w o P 01A μI O

D D t

n e r r u C y l p p u S t u p t u O 0

1A

μ

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

T ABLE 4F. L VCMOS/L VTTL DC C HARACTERISTICS , T A = -40°C TO 85°C

l

o b m y S r

e t e m a r a P s n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m u m i x a M s t i n U V H

I e

g a t l o V h g i H t u p n I K

L C V D D %

5±V 3.3=2V D D 3.0+V V D D %5±V 5.2=7.1V D D 3.0+V V D D V 2.0±V 8.1=V *56.0D

D V D D 3.0+V E

O ,N E _K L C V D D %

5±V 3.3=2V D D 3.0+V V D D %5±V 5.2=7.1V D D 3.0+V V D D V 2.0±V 8.1=V *56.0D

D V D D 3.0+V V L

I e

g a t l o V w o L t u p n I K

L C V D D %

5±V 3.3=3.0-3.1V V D D %5±V 5.2=3.0-7.0V V D D V 2.0±V 8.1=3.0-V *53.0D

D V E

O ,N E _K L C V D D %

5±V 3.3=3.0-3.1V V D D %5±V 5.2=3.0-7.0V V D D V 2.0±V 8.1=3

.0-V *53.0D

D V I H

I t

n e r r u C h g i H t u p n I K

L C V D D %

5±V 3.3=051A μV D D %5±V 5.2=051A μV D D V 2.0±V 8.1=051A μE

O ,N E _K L C V D D %

5±V 3.3=5A μV D D %5±V 5.2=5A μV D D V 2.0±V 8.1=5

A μI L

I t

n e r r u C w o L t u p n I K

L C V D D %

5±V 3.3=5-A μV D D %5±V 5.2=5-A μV D D V 2.0±V 8.1=5-A μE

O ,N E _K L C V D D %

5±V 3.3=051-A μV D D %5±V 5.2=051-A μV D D V 2.0±V 8.1=051-A μV H

O e

g a t l o V h g i H t u p t u O V O D D 1E T O N ;%5±V 3.3=6.2V V O D D I ;%5±V 5.2=H O A

m 1-=2V V O D D 1E T O N ;%5±V 5.2=8.1V V O D D I ;V 2.0±V 8.1=H O A u 001-=V D D 2.0-V V O D D 1E T O N ;V 2.0±V 8.1=V D D 3

.0-V V L

O e

g a t l o V w o L t u p t u O V O D D 1E T O N ;%5±V 3.3=5.0V V O D D I ;%5±V 5.2=L O A

m 1=4.0V V O D D 1E T O N ;%5±V 5.2=54.0V V O D D I ;V 2.0±V 8.1=L O A u 001=2.0V V O D D 1

E T O N ;V 2.0±V 8.1=5

3.0V

05h t i w d e t a n i m r e t s t u p t u O :1E T O N ?V o t O D D .

s m a r g a i d "t i u c r i C t s e T d a o L ",n o i t c e s t n e m e r u s a e M r e t e m a r a P e e S .2/

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

T ABLE 5B. AC C HARACTERISTICS , V DD = V DDO = 2.5V±5%, T A = -40°C TO 85°C

T ABLE 5A. AC C HARACTERISTICS , V DD = V DDO = 3.3V±5%, T A = -40°C TO 85°C

l o b m y S r e t e m a r a P s n o i t i d n o C t s e T m

u m i n i M l a c i p y T m u m i x a M s t i n U f X A M y

c n e u q e r F t u p t u O 052z H M p t H

L 1E T O N ;h g i H o t w o L y a l e D n o i t a g a p o r P f ≤z

H M 0522

.10

.27.2s n t )o (k s 5,2E T O N ;w e k S t u p t u O 051s p t )p p (k s 5,3E T O N ;w e k S t r a P -o t -t r a P 0

58s p t R /t F 4E T O N ;e m i T e s i R t u p t u O %08o t %02571008s p c

d o e

l c y C y t u D t u p t u O f ≤z

H M 0515

45

5%

f t a d e r u s a e m s r e t e m a r a p l l A X A M .e s i w r e h t o d e t o n s s e l n u .

5h g u o r h t 1s e t o N r o f w o l e b d e t s i l C 5e l b a T e e S l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m u m i x a M s t i n U f X A M y

c n e u q e r F t u p t u O 052z H M p t H

L 1E T O N ;h g i H o t w o L y a l e D n o i t a g a p o r P f ≤z

H M 0525

2.14

.25.3s n t )o (k s 5,2E T O N ;w e k S t u p t u O 551s p t )p p (k s 5,3E T O N ;w e k S t r a P -o t -t r a P 1.1s n t R /t F 4E T O N ;e m i T e s i R t u p t u O %08o t %02002008s p c

d o e

l c y C y t u D t u p t u O f ≤z

H M 0515

45

5%

.e s i w r e h t o d e t o n s s e l n u X A M f t a d e r u s a e m s r e t e m a r a p l l A h

g u o r h t 1s e t o N r o f w o l e b d e t s i l C 5e l b a T e e S T ABLE 5C. AC C HARACTERISTICS , V DD = V DDO = 1.8V±0.2V , T A = -40°C TO 85°C

l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m u m i x a M s t i n U f X A M y

c n e u q e r F t u p t u O 002z H M p t H

L 1E T O N ;h g i H o t w o L y a l e D n o i t a g a p o r P f ≤z

H M 0026

.13

.39.4s n t )o (k s 5,2E T O N ;w e k S t u p t u O 061s p t )p p (k s 5,3E T O N ;w e k S t r a P -o t -t r a P 4.2s n t R /t F 4E T O N ;e m i T e s i R t u p t u O %08o t %02571578s p c

d o e

l c y C y t u D t u p t u O f ≤z

H M 0015

45

5%

f t a d e r u s a e m s r e t e m a r a p l l A X A M .

e s i w r e h t o d e t o n s s e l n u V m o r

f d e r u s a e M :1E T O N D D V o t t u p n i e h t f o 2/O D D .

t u p t u o e h t f o 2/V t a d e r u s a e M .s n o i t i d n o c d a o l l a u q e h t i w d n a e g a t l o v y l p p u s e m a s e h t t a s t u p t u o n e e w t e b w e k s s a d e n i f e D :2E T O N O D D .2/l a u q e h t i w d n a s e g a t l o v y l p p u s e m a s e h t t a g n i t a r e p o s e c i v e d t n e r e f f i d n o s t u p t u o n e e w t e b w e k s e h t s a d e n i f e D :3E T O N V t a d e r u s a e m e r a s t u p t u o e h t ,e c i v e d h c a e n o s t u p n i f o e p y t e m a s e h t g n i s U .s n o i t i d n o c d a o l O D D .2/.n o i t c u d o r p n i d e t s e t t o N .n o i t a z i r e t c a r a h c y b d e e t n a r a u g e r a s r e t e m a r a p e s e h T :4E T O N .

56d r a d n a t S C E D E J h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h T :5E T O N

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

T ABLE 5D. AC C HARACTERISTICS , V DD = 3.3V±5%, V DDO = 2.5V±5%, T A = -40°C TO 85°C

l o b m y S r e t e m a r a P s n o i t i d n o C t s e T m u m i n i M l a c i p y T m u m i x a M s t i n U f X A M y

c n e u q e r F t u p t u O 052z H M p t H

L 1E T O N ;h g i H o t w o L y a l e D n o i t a g a p o r P f ≤z

H M 0525

.11

.28.2s n t )o (k s 5,2E T O N ;w e k S t u p t u O 051s p t )p p (k s 5,3E T O N ;w e k S t r a P -o t -t r a P 1

s n t R /t F 4E T O N ;e m i T e s i R t u p t u O %08o t %02002008s p c

d o e

l c y C y t u D t u p t u O f ≤z

H M 0515

45

5%

.e s i w r e h t o d e t o n s s e l n u X A M f t a d e r u s a e m s r e t e m a r a p l l A .

5h g u o r h t 1s e t o N r o f w o l e b d e t s i l F 5e l b a T e e S T ABLE 5E. AC C HARACTERISTICS , V DD = 3.3V±5%, V DDO = 1.8V±0.2V , T A = -40°C TO 85°C

l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m u m i x a M s t i n U f X A M y

c n e u q e r F t u p t u O 002z H M p t H

L 1E T O N ;h g i H o t w o L y a l e D n o i t a g a p o r P f ≤z

H M 0025

.15

.25.3s n t )o (k s 5,2E T O N ;w e k S t u p t u O 051s p t )p p (k s 5,3E T O N ;w e k S t r a P -o t -t r a P 4.1s n t R /t F 4E T O N ;e m i T e s i R t u p t u O %08o t %02002008s p c

d o e

l c y C y t u D t u p t u O f ≤z

H M 0015

45

5%

.e s i w r e h t o d e t o n s s e l n u X A M f t a d e r u s a e m s r e t e m a r a p l l A h

g u o r h t 1s e t o N r o f w o l e b d e t s i l F 5e l b a T e e S T ABLE 5F. AC C HARACTERISTICS , V DD = 2.5V±5%, V DDO = 1.8V±0.2V , T A = -40°C TO 85°C

l o b m y S r e t e m a r a P s

n o i t i d n o C t s e T m

u m i n i M l

a c i p y T m u m i x a M s t i n U f X A M y

c n e u q e r F t u p t u O 002z H M p t H

L 1E T O N ;h g i H o t w o L y a l e D n o i t a g a p o r P f ≤z

H M 0024

.17

.29.3s n t )o (k s 5,2E T O N ;w e k S t u p t u O 061s p t )p p (k s 5,3E T O N ;w e k S t r a P -o t -t r a P 6.1s n t R /t F 4E T O N ;e m i T e s i R t u p t u O %08o t %02002008s p c

d o e

l c y C y t u D t u p t u O f ≤z

H M 0015

45

5%

f t a d e r u s a e m s r e t e m a r a p l l A X A M .

e s i w r e h t o d e t o n s s e l n u V m o r

f d e r u s a e M :1E T O N D D V o t t u p n i e h t f o 2/O D D .

t u p t u o e h t f o 2/V t a d e r u s a e M .s n o i t i d n o c d a o l l a u q e h t i w d n a e g a t l o v y l p p u s e m a s e h t t a s t u p t u o n e e w t e b w e k s s a d e n i f e D :2E T O N O D D .2/l a u q e h t i w d n a s e g a t l o v y l p p u s e m a s e h t t a g n i t a r e p o s e c i v e d t n e r e f f i d n o s t u p t u o n e e w t e b w e k s e h t s a d e n i f e D :3E T O N V t a d e r u s a e m e r a s t u p t u o e h t ,e c i v e d h c a e n o s t u p n i f o e p y t e m a s e h t g n i s U .s n o i t i d n o c d a o l O D D .2/.n o i t c u d o r p n i d e t s e t t o N .n o i t a z i r e t c a r a h c y b d e e t n a r a u g e r a s r e t e m a r a p e s e h T :4E T O N .

56d r a d n a t S C E D E J h t i w e c n a d r o c c a n i d e n i f e d s i r e t e m a r a p s i h T :5E T O N

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

P ARAMETER M EASUREMENT I NFORMATION

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

R ELIABILITY I NFORMATION

T RANSISTOR C OUNT

The transistor count for ICS8312I is: 339

T ABLE 6. θJA VS . A IR F LOW T ABLE

θJA by Velocity (Linear Feet per Minute)

200

500

Single-Layer PCB, JEDEC Standard T est Boards 67.8°C/W 55.9°C/W 50.1°C/W Multi-Layer PCB, JEDEC Standard T est Boards

47.9°C/W

42.1°C/W

39.4°C/W

NOTE: Most modern PCB designs use multi-layered boards. The data in the second row pertains to most designs.

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

P ACKAGE O UTLINE - Y S UFFIX

T ABLE 7. P ACKAGE D IMENSIONS

N

O I T A I R A V C E D E J S

R E T E M I L L I M N I S N O I S N E M I D L L A L

O B M Y S A

B B M

U M I N I M L

A N I M O N M

U M I X A M N 23A ----06.11A 50.0--51.02A 53.104.154.1b 03.073.054.0c 9

0.0--02.0D C I S A B 00.91D C I S A B 00.72D .f e R 06.5E C I S A B 00.91E C I S A B 00.72E .f e R 06.5e C

I S A B 08.0L 54.006.057.0θ0°--7°c

c c ----01.0Reference Document: JEDEC Publication 95, MS-026

Integrated Circuit

Systems, Inc.

ICS8312I

L OW S KEW , 1-TO -12

LVCMOS / LVTTL F ANOUT B UFFER

T ABLE 8. O RDERING I NFORMATION

While the information presented herein has been checked for both accuracy and reliability, Integrated Circuit Systems, Incorporated (ICS) assumes no responsibility for either its use or for infringement of any patents or other rights of third parties, which would result from its use. No other circuits, patents, or licenses are implied. This product is intended for use in normal commercial and industrial applications. Any other applications such as those requiring high reliability or other extraordinary environmental requirements are not recommended without additional processing by ICS. ICS reserves the right to change any circuitry or specifications without notice. ICS does not authorize or warrant any ICS product for use in life support devices or critical medical instruments.r

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