ECG005B-G中文资料

InGaP HBT Gain Block

Product Features

? DC – 4 GHz

? +18 dBm P1dB at 1 GHz ? +34 dBm OIP3 at 1 GHz ? 22.1 dB Gain at 1 GHz ? 3.3 dB Noise Figure at 2 GHz ? Available in Lead-free / green SOT-89 Package Style ? Internally matched to 50 ?

Applications

? Mobile Infrastructure ? CATV / FTTX ? W-LAN / ISM ? RFID

? WiMAX / WiBro

Product Description

The ECG005B is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MH z, the ECG005B typically provides 22.1 dB of gain, +34 dBm Output IP3, and +18 dBm P1dB.

The ECG005B consists of Darlington pair amplifiers using the high reliability InGaP/GaAs H BT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in a low-cost, surface-mountable lead-free/green/RoH S-compliant SOT-89 package. All devices are 100% RF and DC tested.

The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG005B will work for other various applications within the DC to 4 GH z frequency range such as CATV and mobile wireless.

Functional Diagram

Specifications (1)

1. Test conditions unless otherwise noted: 25o C, Supply Voltage = +6 V, Rbias = 18 ?, 50 ? System.

2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

Absolute Maximum Rating Parameter

Rating

Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +150 °C Device Current

130 mA RF Input Power (continuous) +12 dBm Junction Temperature

+250 °C

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance (1)

Ordering Information

Part No.

Description

ECG005B-G InGaP HBT Gain Block

(lead-free/green/RoH S-compliant SOT-89 package)

ECG005B-PCB

700 –2400 MHz Fully Assembled Eval. Board

InGaP HBT Gain Block

Typical Device RF Performance

Su pply Bias = +6 V, R bias = 18 ?, I cc = 65 mA

1. Test conditions: T = 25o C, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 18 ?, Icc = 65 mA typical, 50 ? System.

2. 3OIP measured with two tones at an output power of +4.5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.

S m a ll S ig n a l G a in

0.5

1 1.5

2 2.5

F requ en cy (

G

H z)

G a i n (d B )

S 11 & S 22-3-2-2-1-10.5

1.5

2.5

F re q u e n c y (

G

H z)R e t u r n L o s s (d B )

Ic c v s V d e

2

46810121416012

3456

V d e (V )

I c c (m A )

O IP 3 v s . F re q ue n c y

223340.5

1

1.52

2.5

F re q u e n c y (

G

H z)

O I P 3 (d B m )

N o is e F ig ure v s . F re q u e n c y

23

4560.511.52

F re q u e n c y (

G

H z)

N F (d B )P 1d B v s . F re q ue n c y

11220.5

1

1.5

2

2.5

F re q u e n c y (

G

H z)

P 1d B (d B m )

InGaP HBT Gain Block Recommended Application Circuit

1. The proper values for the components are dependent upon the intended frequency of operation.

2. The following values are contained on the evaluation board to achieve optimal broadband performance:

The proper value for R1 is dependent upon the supply

voltage and allows for bias stability over temperature.

WJ recommends a minimum supply bias of +6 V. A

1% tolerance resistor is recommended.

Typical Device S-Parameters

500 -34.12 -135.89 22.36 159.30 -24.29 -5.13 -21.96 -80.32

1000 -25.88 -122.57 22.10 138.63 -23.67 -9.76 -16.38 -110.06

1500 -21.94 -136.54 21.80 119.41 -23.50 -15.45 -13.06 -132.72

2000 -19.63 -145.42 21.49 99.88 -23.04 -19.26 -10.90 -153.43

2500 -16.68 -165.15 21.20 80.49 -22.91 -25.61 -9.14 -172.26

3000 -15.77 177.44 20.74 61.36 -22.48 -34.76 -7.57 170.00

3500 -14.11 162.19 20.26 42.76 -21.95 -42.47

-6.61 150.90 4000 -12.65 141.66 19.76 23.27 -21.02 -51.88 -5.50 133.37

4500 -11.49 120.75 19.19 4.28 -21.18 -58.92 -4.66 115.20

5000 -9.97 99.89 18.51 -15.13 -20.97 -70.63 -4.16 94.80

5500 -8.98 80.49 17.58 -33.50 -20.43 -80.16 -3.60 77.20

6000 -8.12 62.50 16.79 -51.89 -20.38 -94.99 -3.03 60.86

Device S-parameters are available for download off of the website at: https://www.sodocs.net/doc/7711306309.html,

Vcc

InGaP HBT Gain Block ECG005B-G Mechanical Information

This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free

°C convection reflow