ECG055C-G中文资料
InGaP HBT Gain Block
Product Features
? DC – 6 GHz
? +18 dBm P1dB at 1 GHz ? +34 dBm OIP3 at 1 GHz ? 20.5 dB Gain at 1 GHz ? 3.4 dB Noise Figure ? Available in Lead-free / green SOT-86 Package Style
? Internally matched to 50 Ω
Applications
? Mobile Infrastructure ? CATV / FTTX ? W-LAN / ISM ? RFID
? WiMAX / WiBro
Product Description
The ECG055C is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 1000 MHz, the ECG055C typically provides 19.7 dB of gain, +34 dBm Output IP3, and +18 dBm P1dB.
The ECG055C consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The device is ideal for wireless applications and is available in low-cost, surface-mountable plastic lead-free/green/RoHS-compliant SOT-86 packages. A SOT-89 version is also available as the ECG055B. All devices are 100% RF and DC tested.
The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the ECG055C will work for other various applications within the DC to 6 GHz frequency range such as CATV and fixed wireless.
Functional Diagram
GND
GND
Function Pin No. Input 1 Output/Bias 3 Ground 2, 4
Specifications (1)
Parameter
Units
Min
Typ
Max
Operational Bandwidth MHz DC 6000 Test Frequency MHz 1000
Gain dB 19.7
Output P1dB dBm +18
Output IP3 (2)
dBm +34
Test Frequency MHz 2000
Gain dB 17 18 19 Input Return Loss dB 22 Output Return Loss dB 21
Output P1dB dBm +18
Output IP3 (2) dBm +32
Noise Figure dB 3.4 Device Voltage V 4.2 4.8 5.3 Device Current mA 65
1. Test conditions unless otherwise noted: 25 oC, Supply Voltage = +6 V, Rbias = 18 Ω, 50 Ω system.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature -40 to +85 °C Storage Temperature
-65 to +150 °C RF Input Power (continuous) +12 dBm Device Current
150 mA Junction Temperature
+250 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (1)
Parameter
Units
Typical
Frequency MHz 500 900 1900 2140
S21 dB 20.1 19.7 18.2 17.9 S11 dB -35 -26 -22 -22 S22 dB -23 -22 -21 -21 Output P1dB dBm +18 +18.1 +18.2 +17.8 Output IP3 dBm +34 +34 +32 +30.5 Noise
Figure dB 3.6 3.4 3.4 3.4
Ordering Information
Part No.
Description
ECG055C-G InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 package)
ECG055C-PCB
700 –2400 MHz Fully Assembled Eval. Board
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +6 V, R bias = 18 Ω, I cc = 65 mA
Frequency MHz 100 500 900 1900 2140 2400
3500 5800
S21 dB 20.3 20.1 19.7 18.2 17.9 17.6 16.1 13.7 S11 dB -35 -35 -26 -22 -22 -22 -24 -21 S22 dB -23 -23 -22 -21 -21 -20 -17 -11 Output P1dB dBm +18.2 +18 +18.1 +18.2 +17.8 +17.8 +17.2 Output IP3 dBm +33 +33.5 +34.5 +33.5 +32.9 +32 Noise Figure dB 3.4 3.6 3.4 3.4 3.4 3.8
1. Test conditions: T = 25 oC, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 18 Ω, Icc = 65 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of +4 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain
12
14161820220123456Frequency (GHz)G a i n (d B
)
Return Loss
-40
-30-20-100
0123456
Frequency (GHz)S 11, S 22 (d B )
4.0 4.2 4.4 4.6 4.8
5.0 5.2 5.4 5.6 5.8
6.0
V d e (V )I c c (m A )
O IP 3 vs. F re q u en cy
1
234
F re q u e n c y (M H z)
O I P 3 (d B m )
N o ise F ig u re
2.02.5
3.03.5
4.04.5
5.0800
100012001400160018002000
F req u en cy (M H z)
N F (d B )
P 1d B vs . F req u en cy
1
234
F req u en cy (M H z)
P 1d B (d B m )
InGaP HBT Gain Block
Recommended Application Circuit
Recommended Component Values
Reference
Frequency (MHz)
Designator
50 500 900 1900 2200 2500 3500 L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH C1, C2, C4
.018 μF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig. Value / Type
Size L1 39 nH wirewound inductor 0603 C1, C2 56 pF chip capacitor 0603 C3 0.018 μF chip capacitor 0603 C4 Do Not Place
R4
18 Ω 1% tolerance 0805
The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended.
Typical Device S-Parameters
S-Parameters (V device = +4.8 V, I CC = 65 mA, T = 25°C, calibrated to device leads) Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50 -38.17 9.34 20.30 178.31 -22.39 0.12 -22.58 -1.41 500 -30.35 38.64 20.11 161.09 -22.33 0.74 -23.00 -29.41 1000 -26.51 30.55 19.67 143.04 -22.23 1.87 -22.48 -50.33 1500 -23.32 16.54 19.00 126.43 -22.09 2.57 -21.21 -77.23 2000 -22.01 8.06 18.39 111.18 -21.81 3.37 -20.79 -101.82 2500 -21.87 -3.80 17.62 96.71 -21.55 3.41 -19.71 -119.95 3000 -21.62 -11.61 16.91 83.83 -21.16 3.82 -18.27 -141.35 3500 -23.63 -13.22 16.27 71.31 -20.78 3.21 -17.28 -155.62 4000 -26.77 -23.25 15.65 59.48 -20.29 2.65 -15.32 -170.83 4500 -31.76 -20.76 15.09 47.94 -19.79 1.21 -14.24 174.50 5000 -32.57 122.50 14.65 36.34 -19.25 -0.79 -12.75 163.59 5500 -24.49 133.61 14.16 24.39 -18.78 -3.46 -11.56 150.73 6000 -18.97 125.72 13.73 13.11 -18.29 -6.40 -10.39 140.55
Device S-parameters are available for download off of the website at: https://www.sodocs.net/doc/7314478180.html,
Vcc
InGaP HBT Gain Block
ECG055C-G Mechanical Information
MSL / ESD Rating