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CD4066BM中文资料

CD4066BM中文资料
CD4066BM中文资料

TL F 5665CD4066BM CD4066BC Quad Bilateral Switch

June 1992

CD4066BM CD4066BC Quad Bilateral Switch

General Description

The CD4066BM CD4066BC is a quad bilateral switch in-tended for the transmission or multiplexing of analog or digi-tal signals It is pin-for-pin compatible with CD4016BM CD4016BC but has a much lower ‘‘ON’’resistance and ‘‘ON’’resistance is relatively constant over the input-signal range

Features

Y Wide supply voltage range 3V to 15V

Y High noise immunity 0 45V DD (typ )

Y

Wide range of digital and

g 7 5V PEAK analog switching

Y ‘‘ON’’resistance for 15V operation 80X Y

Matched ‘‘ON’’resistance D R ON e 5X (typ )over 15V signal input

Y ‘‘ON’’resistance flat over peak-to-peak signal range Y

High ‘‘ON’’ ‘‘OFF’’65dB (typ )

output voltage ratio f is e 10kHz R L

e 10k X Y

High degree linearity 0 1%distortion (typ )

High degree linearity f is e 1kHz V is e 5V p-p High degree linearity V DD b V SS e 10V R L e 10k X

Y Extremely low ‘‘OFF’’0 1nA (typ )

switch leakage V DD b V SS e 10V T A e 25 C

Y Extremely high control input impedance 1012X (typ )

Y

Low crosstalk

b 50dB (typ )between switches f is e 0 9MHz R L e 1k X

Y

Frequency response switch ‘‘ON’’40MHz (typ )

Applications

Y

Analog signal switching multiplexing

Signal gating Squelch control Chopper

Modulator Demodulator Commutating switch

Y Digital signal switching multiplexing Y CMOS logic implementation

Y Analog-to-digital digital-to-analog conversion

Y

Digital control of frequency impedance phase and an-alog-signal-gain

Schematic and Connection Diagrams

TL F 5665–1

Dual-In-Line Package

Top View

Order Number CD4066B

C 1995National Semiconductor Corporation RRD-B30M105 Printed in U S A

Absolute Maximum Ratings(Notes1 2) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage(V DD)b0 5V to a18V Input Voltage(V IN)b0 5V to V DD a0 5V Storage Temperature Range(T S)b65 C to a150 C Power Dissipation(P D)

Dual-In-Line700mW Small Outline500mW Lead Temperature(T L)

(Soldering 10seconds)300 C Recommended Operating Conditions(Note2)

Supply Voltage(V DD)3V to15V Input Voltage(V IN)0V to V DD Operating Temperature Range(T A)

CD4066BM b55 C to a125 C CD4066BC b40 C to a85 C

DC Electrical Characteristics CD4066BM(Note2)

Symbol Parameter Conditions

b55 C a25 C a125 C

Units Min Max Min Typ Max Min Max

I DD Quiescent Device Current V DD e5V0 250 010 257 5m A

V DD e10V0 50 010 515m A

V DD e15V1 00 011 030m A SIGNAL INPUTS AND OUTPUTS

R ON‘‘ON’’Resistance R L e10k X to V DD b V SS

2

V C e V DD V IS e V SS to V DD

V DD e5V80027010501300X V DD e10V310120400550X V DD e15V20080240320X

D R ON D‘‘ON’’Resistance R L e10k X to V DD b V SS

2

Between any2of V C e V DD V IS e V SS to V DD

4Switches V DD e10V10X

V DD e15V5X

I IS Input or Output Leakage V C e0g50g0 1g50g500nA

Switch‘‘OFF’’V IS e15V and0V

V OS e0V and15V

CONTROL INPUTS

V ILC Low Level Input Voltage V IS e V SS and V DD

V OS e V DD and V SS

I IS e g10m A

V DD e5V1 52 251 51 5V

V DD e10V3 04 53 03 0V

V DD e15V4 06 754 04 0V

V IHC High Level Input Voltage V DD e5V3 53 52 753 5V

V DD e10V(see note6)7 07 05 57 0V

V DD e15V11 011 08 2511 0V

I IN Input Current V DD b V SS e15V g0 1g10b5g0 1g1 0m A

V DD t V IS t V SS

V DD t V C t V SS

DC Electrical Characteristics CD4066BC(Note2)

Symbol Parameter Conditions

b40 C a25 C a85 C

Units Min Max Min Typ Max Min Max

I DD Quiescent Device Current V DD e5V1 00 011 07 5m A

V DD e10V2 00 012 015m A

V DD e15V4 00 014 030m A

2

DC Electrical Characteristics(Continued)CD4066BC(Note2)

Symbol Parameter Conditions

b40 C a25 C a85 C

Units Min Max Min Typ Max Min Max

SIGNAL INPUTS AND OUTPUTS

R ON‘‘ON’’Resistance R L e10k X to V DD b V SS

2

V C e V DD V SS to V DD

V DD e5V85027010501200X V DD e10V330120400520X V DD e15V21080240300X

D R ON D‘‘ON’’Resistance R L e10k X to V DD b V SS

2

Between Any2of V CC e V DD V IS e V SS to V DD

4Switches V DD e10V10X

V DD e15V5X

I IS Input or Output Leakage V C e0g50g0 1g50g200nA

Switch‘‘OFF’’

CONTROL INPUTS

V ILC Low Level Input Voltage V IS e V SS and V DD

V OS e V DD and V SS

I IS e g10m A

V DD e5V1 52 251 51 5V

V DD e10V3 04 53 03 0V

V DD e15V4 06 754 04 0V

V IHC High Level Input Voltage V DD e5V3 53 52 753 5V

V DD e10V(See note6)7 07 05 57 0V

V DD e15V11 011 08 2511 0V

I IN Input Current V DD b V SS e15V g0 3g10b5g0 3g1 0m A

V DD t V IS t V SS

V DD t V C t V SS

AC Electrical Characteristics T A e25 C t r e t f e20ns and V SS e0V unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units t PHL t PLH Propagation Delay Time Signal V C e V DD C L e50pF (Figure1)

Input to Signal Output R L e200k

V DD e5V2555ns

V DD e10V1535ns

V DD e15V1025ns t PZH t PZL Propagation Delay Time R L e1 0k X C L e50pF (Figures2and3)

Control Input to Signal V DD e5V125ns

Output High Impedance to V DD e10V60ns

Logical Level V DD e15V50ns t PHZ t PLZ Propagation Delay Time R L e1 0k X C L e50pF (Figures2and3)

Control Input to Signal V DD e5V125ns

Output Logical Level to V DD e10V60ns

High Impedance V DD e15V50ns

Sine Wave Distortion V C e V DD e5V V SS eb5V0 1%

R L e10k X V IS e5V p-p f e1kHz

(Figure4)

Frequency Response-Switch V C e V DD e5V V SS eb5V 40MHz

‘‘ON’’(Frequency at b3dB)R L e1k X V IS e5V p-p

20Log10V OS V OS(1kHz)b dB

(Figure4)

3

AC Electrical Characteristics (Continued)T A e25 C t r e t f e20ns and V SS e0V unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Feedthrough Switch‘‘OFF’’V DD e5 0V V CC e V SS eb5 0V 1 25

(Frequency at b50dB)R L e1k X V IS e5 0V p-p 20Log10

V OS V IS eb50dB (Figure4)

Crosstalk Between Any Two V DD e V C(A)e5 0V V SS e V C(B)e5 0V 0 9MHz

Switches(Frequency at b50dB)R L1k X V IS(A)e5 0V p-p 20Log10

V OS(B) V IS(A)eb50dB(Figure5)

Crosstalk Control Input to V DD e10V R L e10k X R IN e1 0k X 150mV p-p

Signal Output V CC e10V Square Wave C L e50pF

(Figure6)

Maximum Control Input R L e1 0k X C L e50pF (Figure7)

V OS(f)e V OS(1 0kHz)

V DD e5 0V6 0MHz

V DD e10V8 0MHz

V DD e15V8 5MHz C IS Signal Input Capacitance8 0pF C OS Signal Output Capacitance V DD e10V8 0pF C IOS Feedthrough Capacitance V C e0V0 5pF C IN Control Input Capacitance5 07 5pF AC Parameters are guaranteed by DC correlated testing

Note1 ‘‘Absolute Maximum Ratings’’are those values beyond which the safety of the device cannot be guaranteed They are not meant to imply that the devices should be operated at these limits The tables of‘‘Recommended Operating Conditions’’and‘‘Electrical Characteristics’’provide conditions for actual device operation

Note2 V SS e0V unless otherwise specified

Note3 These devices should not be connected to circuits with the power‘‘ON’’

Note4 In all cases there is approximately5pF of probe and jig capacitance in the output however this capacitance is included in C L wherever it is specified Note5 V IS is the voltage at the in out pin and V OS is the voltage at the out in pin V C is the voltage at the control input

Note6 Conditions for V IHC a)V IS e V DD I OS e standard B series I OH b)V IS e0V I OL e standard B series I OL

AC Test Circuits and Switching Time Waveforms

FIGURE1 t PHL t PLH Propagation Delay Time Signal Input to Signal Output

FIGURE2 t PZH t PHZ Propagation Delay Time Control to Signal Output

TL F 5665–2 FIGURE3 t PZL t PLZ Propagtion Delay Time Control to Signal Output

4

AC Test Circuits and Switching Time Waveforms(Continued)

V C e V DD for distortion and frequency response tests

V C e V SS for feedthrough test

FIGURE4 Sine Wave Distortion Frequency Response and Feedthrough

FIGURE5 Crosstalk Between Any Two Switches

FIGURE6 Crosstalk Control Input to Signal Output

TL F 5665–3

FIGURE7 Maximum Control Input Frequency

5

Typical Performance Characteristics

‘‘ON’’Resistance vs Signal Voltage for T A e25 C ‘‘ON’’Resistance as a Function of Temperature for

V DD b V SS e15V

‘‘ON’’Resistance as a Function of Temperature for

V DD b V SS e10V ‘‘ON’’Resistance as a Function

of Temperature for

V DD b V SS e5V

TL F 5665–4

Special Considerations

In applications where separate power sources are used to drive V DD and the signal input the V DD current capability should exceed V DD R L(R L e effective external load of the4 CD4066BM CD4066BC bilateral switches) This provision avoids any permanent current flow or clamp action of the V DD supply when power is applied or removed from CD4066BM CD4066BC

In certain applications the external load-resistor current may include both V DD and signal-line components To avoid

drawing V DD current when switch current flows into termi-nals1 4 8or11 the voltage drop across the bidirectional switch must not exceed0 6V at T A s25 C or0 4V at T A l25 C(calculated from R ON values shown)

No V DD current will flow through R L if the switch current flows into terminals2 3 9or10

6

Physical Dimensions inches(millimeters)

Cerdip(J)

Order Number CD4066BMJ or CD4066BCJ

NS Package Number J14A

S O Package(M)

Order Number CD4066BCM

NS Package Number M14A

7

C D 4066B M C D 4066B C Q u a d B i l a t e r a l S w i t c h

Physical Dimensions inches (millimeters)(Continued)

Dual-In-Line Package (N)

Order Number CD4066BMN or CD4066BCN

NS Package Number N14A

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a)are intended for surgical implant support device or system whose failure to perform can into the body or (b)support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectiveness

be reasonably expected to result in a significant injury to the user

National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation

Europe

Hong Kong Ltd

Japan Ltd

1111West Bardin Road

Fax (a 49)0-180-5308586

13th Floor Straight Block Tel 81-043-299-2309

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