Low Noise, Precision, 16 V, CMOS,
Rail-to-Rail Operational Amplifiers
AD8663/AD8667/AD8669 Rev. A
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, M A 02062-9106, U.S.A. Tel: 781.329.4700 https://www.sodocs.net/doc/bc1787340.html, Fax: 781.461.3113 ?2007 Analog Devices, Inc. All rights reserved.
FEATURES
Low offset voltage: 175 μV maximum @ V SY = 5 V Low supply current: 275 μA maximum per amplifier Single-supply operation: 5 V to 16 V
Low noise: 23 nV/√Hz
Low input bias current: 300 fA
Unity-gain stable
Small packages available
3 mm × 3 mm, 8-lead LFCSP
8-lead MSOP
APPLICATIONS
Sensor front ends
Transimpedance a mps
Electrometer applications
Photodiode amplification
Low power ADC drivers
Medical diagnostic instruments
pH and ORP meters and probes
DAC or REF buffers
PIN CONFIGURATIONS
NC
–IN
+IN
V–
NC = NO CONNECT
6
7
4
2
-
1
NC = NO CONNECT
1
NC
2
–IN
3
+IN
4
V–
7V+
8NC
6OUT
5NC
6
7
4
2
-
2 Figure 1. 8-Lead SOIC (R-8)
Figure 2. 8-Lead LFCSP (CP-8-2)
OUT A
–IN A
+IN A
V–
6
7
4
2
-
3
OUT A
–IN A
+IN A
V+
OUT D
–IN D
+IN D
V–
+IN B+IN C
–IN B–IN C
OUT B OUT C
6
7
4
2
-
4
Figure 3. 8-Lead MSOP (RM-8),
8-Lead SOIC (R-8)
Figure 4. 14-Lead SOIC (R-14)
GENERAL DESCRIPTION
The AD866x are rail-to-rail output amplifiers that use the Analog Devices, Inc., patented DigiTrim? trimming technique to achieve low offset voltage. The AD866x feature an extended operating range with supply voltages up to 16 V. They also feature low input bias current, low input offset voltage, and low current noise.
The combination of low offset, very low input bias current, and a wide supply range makes these amplifiers useful in a wide variety of applications usually associated with higher priced JFET amplifiers. Systems using high impedance sensors, such as photodiodes, benefit from the combination of low input bias current, low noise, low offset, and wide bandwidth.
The ability to operate the device for single (5 V to 16 V) or dual supplies (±2.5 V to ±8 V) supports many applications. The rail-to-rail outputs provide increased dynamic range to drive low frequency data converters. The low bias current drift is well suited for precision I-to-V converters. The combination of precision offset, offset drift, and low noise also make the op amps ideal for gain, dc offset adjust, and active filter in both instrumentation and medical applications. These low power op amps can be used in IR thermometers, pH and ORP instru-ments, pressure transducer front ends, and other sensor signal conditioning circuits that are used in remote or wireless applications.
The AD8663/AD8667/AD8669 are specified over the extended industrial temperature range of ?40°C to +125°C. The single AD8663 is available in a narrow 8-lead SOIC package and a very thin, 8-lead LFCSP. The dual AD8667 is available in a narrow 8-lead SOIC package and an 8-lead MSOP. The quad AD8669 is available in a 14-lead SOIC package.
AD8663/AD8667/AD8669
Rev. A | Page 2 of 16
TABLE OF CONTENTS
Features..............................................................................................1 Applications.......................................................................................1 Pin Configurations...........................................................................1 General Description.........................................................................1 Revision History...............................................................................2 Specifications.....................................................................................3 AD8663/AD8667/AD8669 Electrical Characteristics.............3 Absolute Maximum Ratings............................................................5 Thermal Resistance.......................................................................5 ESD Caution...................................................................................5 Typical Performance Characteristics..............................................6 Outline Dimensions.......................................................................13 Ordering Guide.. (15)
REVISION HISTORY
10/07—Rev. 0 to Rev. A
Added AD8667 and AD8669............................................Universal Changes to Features..........................................................................1 Changes to General Description....................................................1 Inserted Figure 3 and Figure 4........................................................1 Changes to Table 1, Power Supply Section....................................3 Changes to Table 2............................................................................4 Reformatted Typical Performance Characteristics Section........6 Changes to Figure 5..........................................................................6 Changes to Figure 13........................................................................7 Changes to Figure 17 and Figure 20...............................................8 Inserted Figure 35 Through Figure 39.........................................11 Inserted Figure 40 and Figure 41..................................................12 Updated Outline Dimensions.......................................................13 Changes to Ordering Guide. (15)
7/07—Revision 0: Initial Version
AD8663/AD8667/AD8669
Rev. A | Page 3 of 16
SPECIFICATIONS
AD8663/AD8667/AD8669 ELECTRICAL CHARACTERISTICS
V SY = 5.0 V , V CM = V SY /2, T A = 25°C, unless otherwise noted. Table 1.
Parameter Symbol Conditions M in Typ M ax Unit INPUT CHARACTERISTICS Offset Voltage V OS V CM = V SY /2 30 175 μV ?40°C < T A < +125°C 450 μV Input Bias Current I B 0.3 pA ?40°C < T A < +85°C 45 pA ?40°C < T A < +125°C 105 pA Input Offset Current I OS 0.2 pA ?40°C < T A < +85°C 35 pA ?40°C < T A < +125°C 65 pA Input Voltage Range 0.2 3.0 V Common-Mode Rejection Ratio CMRR V CM = 0.2 V to 3.0 V 76 100 dB ?40°C < T A < +125°C 76 100 dB Large Signal Voltage Gain A VO R L = 100 kΩ, V OUT = 0.5 V to 4.5 V 115 140 dB R L = 2 kΩ, V OUT = 0.5 V to 4.5 V 106 114 dB Offset Voltage Drift TCV OS ?40°C < T A < +125°C 1.5 5 μV/°C OUTPUT CHARACTERISTICS Output Voltage High V OH I L = 100 μA 4.95 4.97 V ?40°C < T A < +125°C 4.90 V Output Voltage High V OH I L = 1 mA 4.65 4.80 V ?40°C < T A < +125°C 4.60 V Output Voltage Low V OL I L = 100 μA 17 25 mV ?40°C < T A < +125°C 35 mV Output Voltage Low V OL I L = 1 mA 150 200 mV ?40°C < T A < +125°C 250 mV Short-Circuit Current I SC ±7 mA Closed-Loop Output Impedance Z OUT f = 100 kHz, A V = 1 120 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR V SY = 5 V to 16 V 95 105 dB ?40°C < T A < +125°C 95 dB Supply Current per Amplifier I SY V OUT = V SY /2 210 275 μA ?40°C < T A < +125°C 325 μA DYNAMIC PERFORMANCE Slew Rate SR R L = 2 kΩ 0.26 V/μs Gain Bandwidth Product GBP C L = 20 pF 520 kHz Phase Margin ΦM C L = 20 pF 60 Degrees NOISE PERFORMANCE Peak-to-Peak Noise e n p-p f = 0.1 Hz to 10 Hz 2.5 μV p-p Voltage Noise Density e n f = 1 kHz 23 nV/√Hz f = 10 kHz 21 nV/√Hz Current Noise Density i n f = 1 kHz 0.05 pA/√Hz
AD8663/AD8667/AD8669
Rev. A | Page 4 of 16
V SY = 16.0 V , V CM = V SY /2, T A = 25°C, unless otherwise noted. Table 2.
Parameter Symbol Conditions M in Typ M ax Unit INPUT CHARACTERISTICS Offset Voltage V OS V CM = V SY /2 40 300 μV ?40°C < T A < +125°C 500 μV Input Bias Current I B 0.3 pA ?40°C < T A < +85°C 45 pA ?40°C < T A < +125°C 120 pA Input Offset Current I OS 0.2 pA ?40°C < T A < +85°C 35 pA ?40°C < T A < +125°C 65 pA Input Voltage Range 0.2 14.5 V Common-Mode Rejection Ratio CMRR V CM = 0.2 V to 14.5 V 87 109 dB ?40°C < T A < +125°C 87 109 dB Large Signal Voltage Gain A VO R L = 100 kΩ, V OUT = 0.5 V to 15.5 V 115 140 dB R L = 2 kΩ, V OUT = 0.5 V to 15.5 V 106 111 dB Offset Voltage Drift TCV OS ?40°C < T A < +125°C 1.5 5 μV/°C OUTPUT CHARACTERISTICS Output Voltage High V OH I L = 100 μA 15.95 15.98 V ?40°C < T A < +125°C 15.90 V Output Voltage High V OH I L = 1 mA 15.85 15.92 V ?40°C < T A < +125°C 15.80 V Output Voltage Low V OL I L = 100 μA 17 25 mV ?40°C < T A < +125°C 35 mV Output Voltage Low V OL I L = 1 mA 70 100 mV ?40°C < T A < +125°C 125 mV Short-Circuit Current I SC ±50 mA Closed-Loop Output Impedance Z OUT f = 100 kHz, A V = 1 100 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR V SY = 5 V to 16 V 95 105 dB ?40°C < T A < +125°C 95 dB Supply Current per Amplifier I SY V OUT = V SY /2 230 285 μA ?40°C < T A < +125°C 355 μA DYNAMIC PERFORMANCE Slew Rate SR R L = 2 kΩ 0.3 V/μs Gain Bandwidth Product GBP C L = 20 pF 540 kHz Phase Margin ΦM C L = 20 pF 64 Degrees NOISE PERFORMANCE Peak-to-Peak Noise e n p-p f = 0.1 Hz to 10 Hz 2.5 μV p-p Voltage Noise Density e n f = 1 kHz 23 nV/√Hz f = 10 kHz 21 nV/√Hz Current Noise Density i n f = 1 kHz 0.05 pA/√Hz
AD8663/AD8667/AD8669
Rev. A | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 18 V
Input Voltage ?0.1 V to V SY
Differential Input Voltage 18 V
Output Short-Circuit Duration to GND Indefinite
Storage Temperature Range ?60°C to +150°C
Operating Temperature Range ?40°C to +125°C
Junction Temperature Range ?65°C to +150°C
Lead Temperature, Soldering (60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 4. Thermal Resistance
Package Type θJA θJC Unit 8-Lead SOIC (R-8) 121 43 °C/W 8-Lead LFCSP (CP-8-2) 751 181
°C/W 8-Lead MSOP (RM-8) 145 45 °C/W 14-Lead SOIC (R-14) 90 45 °C/W 1
Exposed pad soldered to application board.
ESD CAUTION
AD8663/AD8667/AD8669
Rev. A | Page 6 of 16
TYPICAL PERFORMANCE CHARACTERISTICS
16001400
12001000800600400200
N U M B E R O F A M P L I F I E R S
06742-005
V OS (μV)
Figure 5. Input Offset Voltage Distribution
N U M B E R O F A M P L I F I E R S
TCV OS (μV)
06742-006
Figure 6. Offset Voltage Drift Distribution
0 5.0V CM (V)
V O S (μV )
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.506742-007
Figure 7. Input Offset Voltage vs. Common-Mode Voltage
N U M B E R O F S A M P L E S
06742-037V OS (μV)
Figure 8. Input Offset Voltage Distribution
N U M B E R O F A M P L I T U D E S
6742-038
TCV OS (μV/°C)
Figure 9. Offset Voltage Drift Distribution
016
V CM (V)
V O S (μV )
246810121406742-010
Figure 10. Input Offset Voltage vs. Common-Mode Voltage
AD8663/AD8667/AD8669
Rev. A | Page 7 of 16
100
00.5 4.5V CM (V)
I B (p A )
1.0 1.5
2.0 2.5
3.0 3.5
4.080
6040
20
06742-013
Figure 11. Input Bias Current vs. Common-Mode Voltage at 125°C
100
FREQUENCY (Hz)
C M R R (d B )
1k 10k 100k 1M 10M 06742-023
Figure 12. CMRR vs. Frequency, V SY = 5 V 10000
0.00110LOAD CURRENT (mA)
O U T P U T S A T U R A T I O N V O L T A G E (m V )
0.010.1
1
100
100006742-011
Figure 13. Output Swing Saturation Voltage vs. Load Current 100
0.5
V CM (V)
I B (p A )
2.5 4.5 6.58.510.512.514.5
8060
40
20
006742-016
Figure 14. Input Bias Current vs. Common-Mode Voltage at 125°C
100100
FREQUENCY (Hz)
C M R R (d B )
1k 10k 100k 1M 10M
908070605040302006742-039
Figure 15. CMRR vs. Frequency, V SY = 16 V
0.001
100
LOAD CURRENT (mA)
O U T P U T S A T U R A T I O N V O L T A G E (m V )
0.010.111006742-014
Figure 16. Output Swing Saturation Voltage vs. Load Current
AD8663/AD8667/AD8669
Rev. A | Page 8 of 16
350–40
TEMPERATURE (°C)
D R O P O U T V O L T A G
E (m V )
–25
–10
5
20
35
50
65
80
95
110
125
300
250200
15010050006742-044
Figure 17. Output Voltage Saturation vs. Temperature
100
10M FREQUENCY (Hz)
G A I N (d B ) A N D P H A S E (D e g r e e s )
1k 10k 100k 1M
06742-017
Figure 18. Open-Loop Gain and Phase Shift vs. Frequency 60
–40100
10M
FREQUENCY (Hz)
A C L (d
B )
1k 10k 100k 1M
4020
–20
06742-018
Figure 19. Closed-Loop Gain vs. Frequency 140–40
TEMPERATURE (°C)
D R O P O U T V O L T A G
E (m V )
–25
–10
5
20
35
50
65
80
95
110
125
12010080
604020006742-045
Figure 20. Output Voltage Saturation vs. Temperature
100
10M
FREQUENCY (Hz)
G A I N (d B ) A N D P H A S E (D e g r e e s )
1k 10k 100k 1M
06742-020
Figure 21. Open-Loop Gain and Phase Shift vs. Frequency
60
–40100
10M
FREQUENCY (Hz)
A C L (d
B )
1k 10k 100k 1M 40
20
–20
06742-021
Figure 22. Closed-Loop Gain vs. Frequency, V SY = 16 V
AD8663/AD8667/AD8669
Rev. A | Page 9 of 16
1000
100FREQUENCY (Hz)
Z O U T (?)
1k 10k 100k 1M 10M 100
10
10.106742-040
Figure 23. Closed-Loop Output Impedance vs. Frequency, V SY = 5 V 100
FREQUENCY (Hz)
P S R R (d B )
1k
10k
100k
1M
10M
9080706050
403020100–10–2006742-02
4
Figure 24. PSRR vs. Frequency, V SY = 5 V 10
CAPACITANCE (pF)
O V E R S H O O T (%)
100
1k 807060
5040302010006742-02
5
Figure 25. Small-Signal Overshoot vs. Load Capacitance, V SY = 5 V
100
FREQUENCY (Hz)
Z O U T (?)
1k 10k 100k 1M 10M
06742-041
Figure 26. Closed-Loop Output Impedance vs. Frequency, V SY = 16 V
100
FREQUENCY (Hz)
P S R R (
d B )
1k
10k
100k
1M
10M
9080706050
403020100–10–2006742-027
Figure 27. PSRR vs. Frequency, V SY
= 16 V
10
CAPACITANCE (pF)
O V E R S H O O T (%)
100
1k
807060
504030
2010006742-028
Figure 28. Small-Signal Overshoot vs. Load Capacitance, V SY = 16 V
AD8663/AD8667/AD8669
Rev. A | Page 10 of 16
06742-029
TIME (10μs/DIV)
V O L T A G E (200m V /D I V )
Figure 29. Large Signal Transient Response, V SY = ±2.5 V 06742-03
TIME (2μs/DIV)
V O L T A G E (50m V /D I V
)
Figure 30. Small Signal Transient Response, V SY = ±2.5 V 300
0V SY (V)
I S Y (μA )
246810121416250
200150
10050006742-042
Figure 31. Supply Current vs. Supply Voltage AD8663 06742-032
TIME (20μs/DIV)
V O L T A G E (2V /D I V
)
Figure 32. Large Signal Transient Response, V SY = ±8 V
06742-033
TIME (2μs/DIV)
V
O L T A G E (50m V /D I V )
Figure 33. Small Signal Transient Response, V SY = ±8 V
1200
0V SY (V)
I S Y (μA )
246810121416
1000
800
600
400
200
06742-043
Figure 34. Supply Current vs. Supply Voltage AD8669
AD8663/AD8667/AD8669
Rev. A | Page 11 of 16
+125°C –40°C
+25°C +85°C 0550500450400
50
100150200250300350600I S Y (μA )
0246810121416V SY (V)
06742-031
Figure 35. Supply Current vs. Supply Voltage AD8667 06742-049
TIME (20μs/DIV)
I N P U T V O L T A G E (50m V /D I V )
O U T P U T V O L T A G E (1V /D I V )
Figure 36. Positive Overload Recovery 06742-05
TIME (20μs/DIV)
I N P U T V O L T A G E (50m V /D I V )
O U T P U T V O L
T A G E (1V /D I V )
–0.05–0.10–0.15–0.20–0.25–0.30–0.35
Figure 37. Negative Overload Recovery 1000
1
110000
FREQUENCY (Hz)
e N (n H z )
10100
100010
100
06742-034
Figure 38. Voltage Noise Density
06742
-046TIME (20μs/DIV)
I N P U T V O L T A G E (50m V /D I V )
O U T P U T V O L T A G E (5V /D I V )
0.150.10
0.05–0.05–0.10–0.15–0.20
–0.25
Figure 39. Positive Overload Recovery
0674
2-048
TIME (20μs/DIV)
I N P U T V O L T A G E (50m V /D I V )
O U T P U T V O L T A G E (5V /D I V )
0.05–0.05–0.10–0.15–0.20–0.25–0.30
–0.35
Figure 40. Negative Overload Recovery
AD8663/AD8667/AD8669
Rev. A | Page 12 of 16
06742-051
–20
–40–60–80–100–120–140–160
C H A N N E L S E P A R A T I O N (d B )
100
1k
10k 100k FREQUENCY (Hz)
06742-047
C H A N N E L S E P A R A T I O N (d B )
100
1k
10k 100k
FREQUENCY (Hz)
Figure 41. Channel Separation vs. Frequency Figure 42. Channel Separation vs. Frequency
AD8663/AD8667/AD8669
Rev. A | Page 13 of 16
OUTLINE DIMENSIONS
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES)ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-012-AA
012407-A
0.17 (0.0067)
Figure 43. 8-Lead Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
061507-B
0.90 MAX
Figure 44. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]
3 mm × 3 mm Body, Very Thin, Dual Lead
(CP-8-2)
Dimensions shown in millimeters
AD8663/AD8667/AD8669
Rev. A | Page 14 of 16
COMPLIANT TO JEDEC STANDARDS MO-187-AA
PLANE
0.10
Figure 45. 8-Lead Mini Small Outline Package [MSOP]
(RM-8)
Dimensions shown in millimeters
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES)ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
COMPLIANT TO JEDEC STANDARDS MS-012-AB
060606-A
Figure 46. 14-Lead Small Outline Package [SOIC_N]
Narrow Body (R-14)
Dimensions shown in millimeters
AD8663/AD8667/AD8669 ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
AD8663ARZ1?40°C to +125°C 8-Lead SOIC_N R-8
AD8663ARZ-REEL1?40°C to +125°C 8-Lead SOIC_N R-8
AD8663ARZ-REEL71?40°C to +125°C 8-Lead SOIC_N R-8
AD8663ACPZ-R21?40°C to +125°C 8-Lead LFCSP_VD CP-8-2 A1U
AD8663ACPZ-REEL1?40°C to +125°C 8-Lead LFCSP_VD CP-8-2 A1U
AD8663ACPZ-REEL71?40°C to +125°C 8-Lead LFCSP_VD CP-8-2 A1U
AD8667ARZ1?40°C to +125°C 8-Lead MSOP R-8
AD8667ARZ-REEL1?40°C to +125°C 8-Lead MSOP R-8
AD8667ARZ-REEL71?40°C to +125°C 8-Lead MSOP R-8
AD8667ARMZ-R21?40°C to +125°C 8-Lead MSOP RM-8 A1E
AD8667ARMZ-REEL1?40°C to +125°C 8-Lead MSOP RM-8 A1E
AD8669ARZ1?40°C to +125°C 14-Lead SOIC_N R-14
AD8669ARZ-REEL1?40°C to +125°C 14-Lead SOIC_N R-14
AD8669ARZ-REEL71?40°C to +125°C 14-Lead SOIC_N R-14
1 Z = RoHS Compliant Part.
Rev. A | Page 15 of 16
AD8663/AD8667/AD8669
Rev. A | Page 16 of 16
NOTES
?2007 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D06742-0-10/07(A)