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IRLU024N中文资料

IRLU024N中文资料
IRLU024N中文资料

HEXFET ?

Power MOSFET

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

––– 3.3R θJA Case-to-Ambient (PCB mount)**–––50°C/W

R θJA

Junction-to-Ambient

–––

110

Thermal Resistance

Description

2/10/00

https://www.sodocs.net/doc/b73510727.html, 1

l Logic-Level Gate Drive l Surface Mount (IRLR024N)l Straight Lead (IRLU024N)

l Advanced Process Technology l Fast Switching

l

Fully Avalanche Rated

Fifth Generation HEXFET ? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter

Max.

Units

I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 17I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12A I DM

Pulsed Drain Current 72P D @T C = 25°C Power Dissipation 45W Linear Derating Factor 0.3W/°C V GS Gate-to-Source Voltage

± 16V E AS Single Pulse Avalanche Energy 68mJ I AR Avalanche Current

11A E AR Repetitive Avalanche Energy 4.5mJ dv/dt Peak Diode Recovery dv/dt 5.0

V/ns T J Operating Junction and

-55 to + 175T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD- 91363E

D-Pak I-Pak IRLR024N IRLU024N

IRLR024N IRLU024N

IRLR/U024N

IRLR/U024N

IRLR/U024N

IRLR/U024N

IRLR/U024N

IRLR/U024N

IRLR/U024N

IRLR/U024N

IRLR/U024N

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