HEXFET ?
Power MOSFET
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
––– 3.3R θJA Case-to-Ambient (PCB mount)**–––50°C/W
R θJA
Junction-to-Ambient
–––
110
Thermal Resistance
Description
2/10/00
https://www.sodocs.net/doc/b73510727.html, 1
l Logic-Level Gate Drive l Surface Mount (IRLR024N)l Straight Lead (IRLU024N)
l Advanced Process Technology l Fast Switching
l
Fully Avalanche Rated
Fifth Generation HEXFET ? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 17I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12A I DM
Pulsed Drain Current 72P D @T C = 25°C Power Dissipation 45W Linear Derating Factor 0.3W/°C V GS Gate-to-Source Voltage
± 16V E AS Single Pulse Avalanche Energy 68mJ I AR Avalanche Current
11A E AR Repetitive Avalanche Energy 4.5mJ dv/dt Peak Diode Recovery dv/dt 5.0
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
PD- 91363E
D-Pak I-Pak IRLR024N IRLU024N
IRLR024N IRLU024N
IRLR/U024N
IRLR/U024N
IRLR/U024N
IRLR/U024N
IRLR/U024N
IRLR/U024N
IRLR/U024N
IRLR/U024N
IRLR/U024N