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BCR8PM-14L中文资料

BCR8PM-14L中文资料
BCR8PM-14L中文资料

BCR8PM-14L

Triac

Medium Power Use

REJ03G0308-0100

Rev.1.00

Aug.20.2004 Features

?I T (RMS) : 8 A

?V DRM : 700 V

?I FGTI, I RGTI, I RGTⅢ : 30 mA (20 mA)Note5?Viso : 2000 V ?Insulated Type

?Planar Passivation Type

?UL Recognized : Yellow Card No. E223904

File No. E80271

Outline

Applications

Washing machine, inversion operation of capacitor motor, and other general controlling devices

Maximum Ratings

Voltage class

Parameter Symbol

14

Unit Repetitive peak off-state voltage Note1V DRM700V Non-repetitive peak off-state voltage Note1V DSM840V

Parameter

Symbol Ratings

Unit Conditions

RMS on-state current I T (RMS)8A Commercial frequency, sine full wave 360° conduction, Tc = 88°C

Surge on-state current I TSM 80A 60Hz sinewave 1 full cycle, peak value,non-repetitive

I 2t for fusing

I 2t 26A 2s Value corresponding to 1 cycle of half wave 60Hz, surge on-state current

Peak gate power dissipation P GM 5W Average gate power dissipation P G (AV)0.5W Peak gate voltage V GM 10V Peak gate current I GM 2

A Junction temperature Tj – 40 to +125°C Storage temperature Tstg – 40 to +125

°C Mass

— 2.0g Typical value

Isolation voltage Viso

2000

V

Ta = 25°C, AC 1 minute,T 1·T 2·G terminal to case

Notes: 1.Gate open.

Electrical Characteristics

Parameter

Symbol Min.Typ.Max.Unit Test conditions

Repetitive peak off-state current I DRM —— 2.0mA Tj = 125°C, V DRM applied On-state voltage V TM —— 1.6V Tc = 25°C, I TM = 12 A,

Instantaneous measurement ΙV FGT Ι

—— 1.5V ΙΙV RGT Ι—— 1.5V Gate trigger voltage Note2

ΙΙΙV RGT ΙΙΙ—— 1.5V Tj = 25°C, V D = 6 V, R L = 6 ?,R G = 330 ?

ΙI FGT Ι——30Note5mA ΙΙI RGT Ι——30Note5mA Gate trigger current Note2

ΙΙΙ

I RGT ΙΙΙ——30Note5mA Tj = 25°C, V D = 6 V, R L = 6 ?,R G = 330 ?

Gate non-trigger voltage V GD 0.2——V Tj = 125°C, V D = 1/2 V DRM Thermal resistance

R th (j-c)—— 3.7°C/W Junction to case Note3Critical-rate of rise of off-state

commutating voltage

Note4

(dv/dt)c

10

V/μs

Tj = 125°C

Notes: 2.Measurement using the gate trigger characteristics measurement circuit.

3.The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W.

4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

5.High sensitivity (I GT ≤ 20 mA) is also available. (I GT item: 1)

Performance Curves

Package Dimensions

Order Code

Lead form Standard packing Quantity Standard order code Standard order code example

Straight type Vinyl sack100Type name +A BCR8PM-14LA Lead form Plastic Magazine (Tube)50Type name +A – Lead forming code BCR8PM-14LA-A8 Note :Please confirm the specification about the shipping in detail.

https://www.sodocs.net/doc/b014774157.html, RENESAS SALES OFFICES

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501

Renesas Technology Europe Limited.

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom

Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900

Renesas Technology Europe GmbH

Dornacher Str. 3, D-85622 Feldkirchen, Germany

Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11

Renesas Technology Hong Kong Ltd.

7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2375-6836

Renesas Technology Taiwan Co., Ltd.

FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology (Shanghai) Co., Ltd.

26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China

Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952

Renesas Technology Singapore Pte. Ltd.

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Tel: <65> 6213-0200, Fax: <65> 6278-8001

? 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.

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