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January 2003-Ed:6A
SMALL SIGNAL SCHOTTKY DIODE
Symbol Parameter
Value Unit V RRM Repetitive peak reverse voltage
10V I F Peak forward current
δ=0.113A I FSM Surge non repetitive forward current tp=10ms 5A P tot Power Dissipation Ta=25°C
310mW T stg Storage temperature range
-65to +150
°C Tj Maximum operating junction temperature *150°C TL Maximum temperature for soldering during 10s
260
°C
ABSOLUTE RATINGS (limiting values)Symbol Parameter
Value Unit R th (j-a)
Junction to ambient (*)
400
°C/W
(*)Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE *:
dPtot dTj Rth j a <
?1
()
thermal runaway condition for a diode on its own heatsink
BAT60J
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests conditions Min.Typ.Max.Unit V F*Forward voltage drop Tj=25°C I F=10mA0.280.32V
I F=100mA0.350.40
I F=1A0.530.58
I R**Reverse leakage current Tj=25°C V R=5V13μA
Tj=25°C V R=8V 1.34
Tj=25°C V R=10V26
Tj=25°C V R=12V 2.57.5
Tj=80°C V R=8V73150
Pulse test:*tp=380μs,δ<2%
**tp=5ms,δ<2%
To evaluate the conduction losses the following equation:
P=0.38x I F(AV)+0.17I F2(RMS)
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0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00
0.050.100.150.200.250.300.35
PF(av)(W)
Fig. 1:Average forward power dissipation versus average forward current.
25
50
75
100
125
150
0.0
0.4
0.8
1.21.6
2.02.42.8
3.2IF(A)
Fig. 2-1:Peak forward current versus ambient temperature (
δ= 0.11).
25
50
75
100
125
150
0.00
0.050.100.150.200.250.300.350.400.450.500.550.60IF(av)(A)
Fig. 2-2:Average forward current versus ambient temperature (δ= 0.5).
1E-3
1E-2
1E-1
1E+0
IM(A)Fig. 3:Non repetitive surge peak forward current versus overload duration (maximum values).
1E-4
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
Zth(j-a)/Rth(j-a)Fig.4:Relative variation of thermal impedance junc-
tion to ambient versus pulse duration (Epoxy printed circuit board FR4with recommended pad layout).
1
2
3
4
5
6
7
8
9
10
1E-4
1E-3
1E-2
1E-1
IR(mA)
Fig.5:Reverse leackage current versus reverse voltage applied (typical values).
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25
50
75
100
125
150
1E-1
1E+0
1E+11E+21E+31E+41E+5
IR[Tj] / IR[Tj=25°C]Fig.6:Reverse leackage current versus junction temperature (typical values).
1
10
C(pF)
Fig.7:Junction capacitance versus reverse voltage applied (typical values).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1E-1
IFM(A)
Fig.8-1:Forward voltage drop versus forward cur-rent (High level).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.00.10.2
0.3
0.4
0.50.6
0.70.8
0.91.0IFM(A)
Fig.8-2:Forward voltage drop versus forward cur-rent (Low level).
10
20
30
40
50
60
70
80
90
100
100
150200250300350400450500550600Rth(j-a) (°C/W)
Fig.9:Thermal resistance junction to ambient ver-sus copper surface (epoxy printed circuit board FR4,copper thickness:35μm).
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Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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PACKAGE MECHANICAL DATA SOD-323
Type Marking Package Weight Base qty Delivery mode BAT60JFILM
60
SOD-323
0.005g.
3000
Tape &reel
s
Epoxy meets UL94V-0
MARKING
分销商库存信息: STM
BAT60JFILM