Yole_Power_GaN_Market_Technology_Report_Sample Yole GaN功率电子器件市场报告2012

Power GaN

GaN technologies for power electronic applications: Industry and market status & forecasts . 2012 edition 75, cours Emile ZOLA, F-69100 Villeurbanne, France Tel: +33 472 83 01 80 - Fax: +33 472 83 01 83

Dow corning

FBH

EpiGaN

AZZURRO

FBH

EPC Corp. IMEC

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Power GaN: a Question of Business Model…

GaN-on-Si epiwafer

Tomorrow ?

Business Model: Sale epiwafers to CMOS power

pure-players whiling to enter in the GaN industry Silicon Epitaxy

SiC Epitaxy

Power Device manufacturer

Front-End

Si CZ Wafer

SiC wafer

Power Device manufacturer

Front-End

Si FZ thin-wafer

Epi can be integrated at wafer vendor side or at device maker side or subcontracted to an epi-house

S i o r S i C T r a c k 1

S i T r a c k 2

Power Device manufacturer Front-End Today:

?Power device makers usually buy polished Silicon wafers, conduct the epi (or buy Si epi-wafers) if needed (FZ thin wafer doesn’t require epitaxy) then process the devices. This model is the same for SiC technology. ?

For those who plan to enter in the GaN field, 2 scenario could occur: ?Some may probably not integrate MOCVD GaN epitaxy . They will buy GaN epiwafers and process it in the

existing Front-End lines, as they use to do with Silicon substrates (or SiC) ?Some will try to fully integrate the GaN process, from the bare silicon, the GaN epi and the Front-End

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GaN Devices in Power Application

2010-2020 market size, split by application

Source: Yole Développement

Out of defense-related and development contracts

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6” (equiv.) GaN -on-Si Epi-wafer

2010-2020 market size and volume, split by application

Source: Yole Développement

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Power Electronics

2011-2020 value-chain analysis: wafer, device, system

Electronics Systems

$XX2 B Power Inverters

$X1 B Semiconductor power devices

$1X.7 B

Power wafers

$X.XX B

Electronics Systems

$XX4 B Power Inverters

> $X0 B Semiconductor power devices

$X5.7 B

Power wafers $X.62 B

2011

2020

CAGR: +9.2%

CAGR: +8.1%

CAGR: +1.9%

CAGR: +6.3%

GaN playground

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Wafer diameter evolution in Power

Electronics 2010-2020

6” is exceeding 50% of current power devices manufacturing, however, 200mm is ramping -up very strongly with lots of fab being converted. Infineon is the first company having

introduced a 300mm power wafer fab in Dresden in 2011.

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6kV 4kV 2kV

200A

1kA

2kA

2.2kA

+1MHz

100kHz 1kHz 100Hz V o l t a g e

Applications: All type of inverters kW to MW range

Applications: AC drive – renewable energy – Grid T&D Medium voltage only (>1kV DC link) MW range minimum

Applications: AC drive – Grid T&D / Medium to high voltage

Today’s split between the

different devices is very clear, with each being used

for an application.

Recent improvements of Si devices (super junction, high speed IGBT) and future materials (SiC, GaN) will mix the performances and open new device

choices

8kV 10kV

GaN: faster than IGBT, more powerful

than MOSFET

New capabilities offer by GaN devices

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Recent M&A, investments and fund

raisings in the GaN area

Funding: XX M €

Nov 2010

Acquisition of Velox

Feb. 2011

Series C funding: $XXM

Feb 2011

Series A&B funding: $XXM

Funding: XX M €

July 2011

Series D funding: $25M

June 2011

Funding: $XXM Nov 2011

CamGaN (UK)

$XXM funding over past 10years

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Power GaN main players and related business model

FL: Fab-less business model. Design only Y O

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GaN-on-Si: Main technical steps over the

value-chain

Silicon growth

GaN Epitaxy

Wafering Polishing

Silicon ingot (111)

Silicon wafer

Front-End

GaN-on-Si epi-wafer

Chips: dies-on-wafer

Back-End

Back-grinding Dicing, Flip-chip

Packaging

Binning, pick-and-place Packaging, Housing

Power module

Litho, deposition, etching, metallization…

Bare-die

Application

Power Inverter

Discrete

IC

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GaN-based Power Devices Overview of on-going initiatives (1/3)

Fully available off-the-shelf Available for selected

customers

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EPC Corp.

GaN transistor die-size as a function of Vb and Id

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Typical 200V HEMT cost breakdown

Reference: EPC 200V/12A XXmm2 die-size

Breakdown over a total of $X.XX

(raw manufacturing cost)

Calculations based on:

–XX μm epi thickness –6” wafer

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Expected evolution of GaN device market price in $/amp for several Vb

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Payback time for GaN introduction upon 2 applications: PFC 1kW and PV inverter 5kW

2015 simulations exhibit that despite a +XX% cost increasing at power

module level, GaN added-value on efficiency and passive size shrinking makes a payback time below XX days for a 5kW PV inverter

If expected market price roadmap becomes real in 2020, then the choice of GaN is likely to become obvious.

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GaN epiwafer Market for PV Inverters 6” equiv. GaN substrate market volume (units) Hypothesis:

? 600V/X0A die-size: XX mm2 including street-width

? Surface available: X0%

? Yield: X0%

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