BTA206-800CT,127;中文规格书,Datasheet资料
1.Product profile
1.1General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (T j = 150 °C) without the aid of a snubber where "high junction operating temperature capability" is required.
1.2Features and benefits
?3Q technology for improved noise immunity ?High commutation capability with maximum false trigger immunity ?High immunity to false turn-on by dV/dt
?High junction operating temperature capability ?High voltage capability ?Planar passivated for voltage ruggedness and reliability ?Triggering in three quadrants only
1.3Applications
?Applications subject to high temperature ?Electronic thermostats (heating and cooling)
?Motor controls for home appliances ?Rectifier-fed DC inductive loads e.g. DC motors and solenoids
1.4Quick reference data
BTA206-800CT
3Q Hi-Com Triac
Rev. 2 — 15 December 2011
Product data sheet
Table 1.Quick reference data Symbol Parameter
Conditions
Min Typ Max Unit V DRM repetitive peak off-state voltage --800V I TSM non-repetitive peak on-state current
full sine wave; T j(init)25°C;
t p =20ms; see Figure 4; see Figure 5--60A T j junction temperature --150°C I T(RMS)
RMS on-state current
full sine wave; T mb ≤134°C; see Figure 1; see Figure 2; see Figure 3
--6
A
2.Pinning information
3.Ordering information
Static characteristics
I GT
gate trigger current
V D =12V; I T =0.1A; T2+ G+; T j =25°C; see Figure 74-35mA V D =12V; I T =0.1A; T2+ G-; T j =25°C; see Figure 74-35mA V D =12V; I T =0.1A; T2- G-; T j =25°C; see Figure 7
4
-35
mA
Dynamic characteristics dV D /dt
rate of rise of off-state voltage
V DM =536V; T j =150°C;(V DM = 67% of V DRM ); exponential waveform; gate open circuit
500
--V/μs
dI com /dt
rate of change of commutating current
V D =400V;T j =150°C; I T(RMS)=6A; dV com /dt =20V/μs; (snubberless condition); gate open circuit
10--A/ms
Table 1.Quick reference data …continued Symbol Parameter Conditions
Min Typ Max Unit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol
1T1main terminal 1SOT78 (TO-220AB)
2T2main terminal 23G gate
mb
T2
mounting base; main terminal 2
12mb
3
sym051
T1G
T2
Table 3.
Ordering information
Type number
Package Name
Description
Version BTA206-800CT
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
4.Limiting values
Table 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit V DRM repetitive peak off-state voltage -800V I T(RMS)RMS on-state current
full sine wave; T mb ≤134°C; see Figure 1; see Figure 2; see Figure 3-6A I TSM
non-repetitive peak on-state current full sine wave; T j(init)25°C; t p =20ms;
see Figure 4; see Figure 5
-60A full sine wave; T j(init)25°C; t p =16.7ms
-66A I 2t I 2t for fusing
t p =10ms; sine-wave pulse
-18A 2s dI T /dt rate of rise of on-state current I T =10A; I G =0.2A;dI G /dt =0.2A/μs
-100A/μs I GM peak gate current -2A P GM peak gate power -5W P G(AV)average gate power over any 20 ms period
-0.5W T stg storage temperature -40150°C T j
junction temperature
-150
°C
5.Thermal characteristics
Table 5.Thermal characteristics Symbol Parameter
Conditions
Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base
full cycle; see Figure 6--2K/W half cycle; see Figure 6
-- 2.4K/W R th(j-a)
thermal resistance from junction to ambient in free air
-60
-K/W
6.Characteristics
Table 6.Characteristics
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
I GT gate trigger current V D=12V; I T=0.1A; T2+ G+;
T j=25°C;see Figure 7
4-35mA
V D=12V; I T=0.1A; T2+ G-;
T j=25°C;see Figure 7
4-35mA
V D=12V;I T=0.1A; T2- G-; T j=25°C;
see Figure 7
4-35mA
I L latching current V D=12V; I G=0.1A; T2+ G+;
T j=25°C;see Figure 8
--50mA
V D=12V; I G=0.1A; T2+ G-;
T j=25°C;see Figure 8
--60mA
V D=12V;I G=0.1A; T2- G-; T j=25°C;
see Figure 8
--50mA I H holding current V D=12V; T j=25°C; see Figure 9--35mA V T on-state voltage I T=7A; see Figure 10- 1.3 1.6V
V GT gate trigger voltage V D=12V; I T=0.1A; T j=25°C;
see Figure 11
-0.8 1.5V
V D=400V;I T=0.1A;T j=150°C0.25--V
I D off-state current V D=800V;T j=150°C-0.42mA Dynamic characteristics
dV D/dt rate of rise of off-state voltage V DM=536V; T j=150°C; (V DM = 67% of
V DRM); exponential waveform; gate open
circuit
500--V/μs
dI com/dt rate of change of commutating
current V D=400V;T j=150°C; I T(RMS)=6A;
dV com/dt=20V/μs; (snubberless
condition); gate open circuit
10--A/ms
V D=400V;T j=150°C; I T(RMS)=6A;
dV com/dt=10V/μs; gate open circuit
12--A/ms
V D=400V;T j=150°C; I T(RMS)=6A;
dV com/dt=1V/μs; gate open circuit
20--A/ms
7.Package outline
Fig 12.Package outline SOT78 (TO-220AB)
分销商库存信息: NXP
BTA206-800CT,127