Technology RouteTowardsIndustrialApplicationofRearPassivatedSiliconSolarCells

TECHNOLOGY ROUTE TOWARDS INDUSTRIAL APPLICATION OF REAR PASSIVATED SILICON SOLAR CELLS

J. Rentsch, O. Schultz, A. Grohe, D. Biro, R. Preu, G. P. Willeke

Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, Germany Phone: +49 761 4588 5199, email: jochen.rentsch@ise.fraunhofer.de

ABSTRACT

Going beyond the standard industrial screen-printed Al-BSF rear side, this paper reports about process technologies for an industrial implementation of a rear passivated, locally contacted multicrystalline (mc) sili-con solar cell. The solar cells rear side features a pas-sivation stack system and an evaporated and LFC con-tacted Al layer. Due to the need of processing thinner wafers, a technology survey focuses on the adaptation of mainly inline based technologies for the realization of an industrial process scheme. New inline process tech-nologies are introduced and compared with standard technologies. Up to date, large area mc-Si solar cells (156x156mm2) fabricated completely with these inline technologies reach fill factors up to 76%, on reference cells (125x125mm2) an efficiency of 16% is reached with an untextured front surface.

INTRODUCTION

Presently most solar cells manufactured feature a full area screen-printed or by means of other deposition methods applied aluminium rear contact. The p+back surface field (Al-BSF) created underneath the surface lowers the rear side recombination but also creates mechanical stress and leads to a poor optical perform-ance. These disadvantages may limit a future high yield manufacturing of especially thinner wafers. The Laser-Fired Contact technology (LFC) as a concept with a dielectrically passivated rear side and local contacts has proven to overcome these drawbacks in the past. Cell efficiencies well above 20% were reached with a high efficiency cell process using photolithography technology [1,2]. Several process schemes have been proposed so far, downscaling this high efficiency proc-ess towards industrial application [3]. In this work we present the comparison of different batch and inline based technologies fulfilling industrial throughput re-quirements for the fabrication of large area (> 100 cm2) multicrystalline silicon solar cells with rear side passiva-tion. Due to the demand of processing especially thin wafers, more emphasis has been put on the integration of inline technologies to reduce wafer handling steps and therefore the mechanical stress.

SOLAR CELL STRUCTURE

In contrast to earlier studies we are now focussing on a rear passivation scheme based on a stack layer system consisting of a thin thermally grown silicon oxide, a SiN x and a PECVD silicon oxide layer. The overall cell struc-ture and the impact of each layer to the final solar cell characteristic is described in more detail elsewhere [4]. The thin thermally grown silicon oxide passivates the rear and the emitter on the front side simultaneously and avoids shunting by inversion layers often observed for silicon nitride passivation layers. Since it is only about 15nm thick the optical properties of the front remain virtually unchanged when the thickness of the antireflection coating is adjusted accordingly. Further-more the stack system has some benefits especially for multicrystalline silicon of medium material quality:·Emitter diffusion can be applied on both sides and improves the gettering of impurities.

·The silicon nitride on the rear enables an additional hydrogenation of the multicrystalline silicon bulk during the firing of the screen-printed front metalli-

sation.

The overall solar cell structure is shown in Figure1. Besides the passivation stack, the cell structure fea-tures screen printed front contacts and a Laser Fired Contacts (LFC) back electrode.

SiN

x

SiN

x

PECVD SiO

x

thermal SiO

x

thermal SiO

x

n-emitter

p-base

Al

Figure 1. Solar cell structure with stack layer system for rear surface passivation. Front contacts are screen-printed, the back contact is formed by LFC.

Screen printing

Firing

Al deposition evaporation

LFC

Annealing inline furnace

Figure 2.Technology roadmap for the industrial implementation of a silicon solar cell structure with a passivated rear surface and Laser Fired Contacts (LFC). For each process step, technology alternatives are listed and tested.

PRODUCTION CONCEPT

The industrial realization of a solar cell structure with a stack layer system for rear side passivation and local point contacts requires several novel process steps, as can be seen in Figure 2. Compared to stan-dard cell technologies, these are the single-side etch back of the emitter layer on the rear side, a dry oxida-tion, the aluminum deposition and the annealing after laser contacting. Single-side etching has been done in an inline wet etching system from Gebr. Schmid GmbH, guiding the wafers over wetted rolls. The one-sidedness of the etch is guaranteed by a strong air flow directed to the top surface of the wafer.

With the dry oxidation step, a thin thermally grown silicon oxide (in the range of 10nm) is build up on both sides of the wafers, simultaneously passivating the p-type rear and the emitter on the front. The layers are thin enough to ensure excellent antireflection properties in combination with the SiN x antireflection at the front side. On the rear side the thin layer needs to be pro-tected from the metallization by the SiN x and the PECVD SiO 2. Due to the short process time, the dry oxidation does not need to be done in a tube furnace, but is also possible in an inline furnace very similar to the corresponding diffusion process technologies.

Another novel process step to be included is the deposition of a thin Al layer on the rear side either done by inline sputtering or evaporation. An overview of the different metallization techniques for the back side and their impact as well as details on the optimum anneal-ing conditions gives [5]at this conference. Other al-ready existing process technologies for texturing mul-ticrystalline silicon (wet and plasma chemistry based), for emitter diffusion (POCl 3tube and inline diffusion) as well as passivation layer deposition (Sputtering or PECVD) have been partially compared and process results have been characterized.

The technology survey and the direct comparison of the different technologies has been carried out on 156x156mm2 large neighboring multicrystalline silicon wafers with a thickness 270μm and a resistivity range of 0.8–2W cm.

TEXTURING

For texturing multicrystalline silicon grain independent, isotropic etching technologies have to be applied. In this work, acidic wet and plasma based inline texturing technologies have been compared. Acidic texturing was performed in an inline wet bench using HF /HNO 3/H 2O as etching solution. Plasma texturing for comparison was carried out in an inline plasma sys-tem using SF 6/O 2as etching gases [6]. Reflectance measurements of the different etching methods are shown in Figure 3. Directly after texturization, plasma etching reaches weighted reflectance (R w ) values of around 16% compared to 21% with the acidic texture (the measured reflectance values are weighted with the solar spectrum and the IQE of an industrial mc-Si solar cell). After SiN x AR coating the difference

400

60080010001200

15304560R e f l e c t a n c e [%]

Wavelength [nm]

Figure 3. Comparison of dry and wet chemical texturing technologies after etching and after SiN x antireflection coating.

disappears giving a R w in both cases of around 6%. Compared to a saw damage etched neighboring mc-Si wafer with R w =9%, the texturing results in an overall reflection loss gain of around 3% which may increase the short-circuit current of the final solar cells.

EMITTER DIFFUSION

For n-type emitter formation a POCl3tube diffusion

as the most common diffusion technology in solar cell

manufacturing has been compared with an inline diffu-

sion system. In the latter case, the wafers are first

coated with a thin phosphorous-containing layer and

then transported through the inline furnace, where the

wafers are heated up to temperatures of 850 to 900°C.

For coating, the spraying equipment used in this work

consists of an ultrasonic nozzle, a spray-shaping de-

vice, an exhausted enclosure, a conveyor system and a

liquid delivery system [7].

Sheet resistance distributions of both processes are

shown in Figure 4on subsequent multicrystalline silicon

wafers. The distribution is slightly sharper in case of

POCl3diffusion, but the differences are marginal.

5

10

15

c

o

u

n

t

s

normalized R

sh

[W/sq.]

c

o

u

n

t

s

normalized R

sh

[W/sq.]

Figure 4. Sheet resistance distribution of mc-Si wafers

with POCl3tube diffusion (left) and inline diffusion

(right).

Final sheet resistance values could be fixed to 45W/sq.

in both cases, depending on the diffusion time and

temperature.

PASSIVATION STACK

After diffusion, rear side emitter removal and PSG

etching, the passivation stack system on the front and

back side of the wafers can be build up.

Compared to standard cell technology, dry oxidation

represents the most challenging process step in our

technology route. Requirements concerning the cleanli-

ness of the wafer before oxidation are high and well

known from high efficiency processing to maintain a

high passivation quality [8]. Two different technologies

are compared, oxidation in a tube and in an inline fur-

nace similar to the corresponding diffusion systems. In

case of the inline furnace, the oxidation takes place

under Air/O2ambient for several minutes growing a

thermal oxide of around 10nm. The oxide thickness in

case of the tube oxidation has been measured to

around 30μm, which is slightly to thick for an optimum

adjustment of the front side antireflection coating. μ-

PCD mappings have been performed on neighboring

acidic textured and inline diffused mc-Si wafers directly

after oxidation (see Figure 5, upper diagrams) in case

of tube furnace and inline furnace oxidation. Average

lifetimes reached in both cases are similar and in the

range of 8μs, mainly limited by the high emitter doping

concentration (~45W/sq.). The distribution in case of

inline oxidation is wider, giving slightly higher lifetimes

above 20μs in areas of good material quality. The

situation changes, when applying the PECVD SiNx

layer on both sides as well

tube furnace inline furnace

Figure 5. Distribution of carrier lifetimes measured by μ-

PCD of neighboring acidic textured mc-Si wafers

(156x156mm2) after oxidation in a tube furnace and in

an inline furnace (upper diagrams) and after passivation

stack deposition and firing (lower diagrams).

as the PECVD SiO x layer on the rear. The samples

were also fired at a typical contact sintering tempera-

ture of 800°C. Lifetimes are now shifted towards higher

values, in case of tube oxidation the mean value is in-

creased to 10μs, whereas the inline oxidized wafer

only kept his lifetime performance. The increase in life-

time can be attributed to a hydrogen release from the

SiN x layer during firing, the temperature stability of the

thin thermal oxide layer also seems to be higher in case

of tube oxidation.

Remaining lifetime limitations are visible by QSSPC

measurements of the same mc-Si wafers (Figure 6) [9].

Significant trapping occurs in case of acidic textured

and inline diffused wafers independent of the oxidation

101310141015

1

10

100

E

f

f

e

c

t

i

v

e

c

a

r

r

i

e

r

l

i

f

e

t

i

m

e

[

μ

s

]

Excess carrier density [cm-3]

Figure 6. Effective carrier lifetime measured by QSSPC

after oxidation and firing for the different oxidation tech-

nologies (tube/inline) on mc-Si wafers with acidic tex-

tured surface and saw damage etched surface.

method. This trapping may be ascribed to the acidic

textured front and back surface, because in case of a

saw damage etched surface, an increase in effective

lifetime for low excess carrier densities is not as distinc-

tive [10].

SOLAR CELL RESULTS

The current status of fill factor optimization of com-

pletely with inline processed (diffusion, oxidation) large

area mc-Si solar cells is shown in Figure 7. Due to

some mismatches during processing (SiN x coating on

front side too thick, sheet resistance of inline emitter

diffusion only around 40W/sq.) V oc and j sc and therefore

the efficiency of these cells have to be further opti-

mized.

780800820840860

30

40

50

60

70

80

f

i

l

l

f

a

c

t

o

r

[

%

]

firing peak temperature [°C]

Figure 7. Peak firing temperature optimization for large

area (243 cm2) mc-Si solar cells with saw damage

etched and acidic texured front surface.

The potential of the passivation stack system with local

rear contacts (LFC) is shown in Table1. An overall in-

crease in V oc of 2% relative and 4% relative in j sc is

reached on large area mc-Si wafers compared to a

standard Al-BSF cell structure. These progressions can

be directly attributed to the excellent surface passiva-

tion quality as well as the improved internal reflection of

the passivation stack layer system on the rear side.

Table 1. Best results for large area (156cm2) mc-Si

solar cells with standard Al-BSF and LFC passivation

stack on the rear side.

V

oc

[mV]

j

sc

[mA/cm2]

FF

[%]

h

[%]

Al-B S F

B est cell61131.275.914.5

LFC with pas sivation stack

B est cell62132.578.515.8

This conclusions are underlined by the spectral re-

sponse measurement of the two cells in Figure 8. The

benefit of the rear passivated solar cell can be clearly

attributed to an improved electrical and optical perform-

ance of the wafers rear side.

i

n

t

e

r

n

a

l

Q

E

,

R

e

f

l

e

c

t

a

n

c

e

[

%

]

wavelength l(nm)

Figure 8. Spectral response of a mc-Si solar cell with

passivation stack layer on the rear side compared to a

reference cell with a full aluminum BSF.

CONCLUSION

A technology route for the industrial implementation

of a rear passivated silicon solar cell structure is pre-

sented. The cell features a passivation stack system on

the rear assuring high electrical and optical perform-

ance. The impact of completely novel as well as more

inline based process steps on the material quality of

mc-Si wafers have been analyzed and compared with

standard process technology. It has been shown that

both inline and tube diffusion and oxidation processes

can be used in industrial manufacturing of rear pas-

sivated silicon solar cells. The potential of these cells

has been proven with a relative increase for V oc of 2%

and J sc of 4% compared to standard mc-Si solar cells

featuring an Al-BSF on the rear.

ACKNOWLEDGEMENTS

Technical support of the PV-TEC crew, Elisabeth

Sch?ffer, Phillip Richter, Andreas Drews and Erich

Reutter from G ebr. Schmid G mbH is gratefully ac-

knowledged.

REFERENCES

[1] E. Schneiderl?chner, R. Preu, R. Lüdemann et.al., Proc. of

the 17th EUPVSEC, Munich(2001), pp. 1303-1306.

[2] O. Schultz, S. W. Glunz, G. Willeke, Progr. Photovolt.12,

2004, pp. 553-558.

[3] R. Preu, E. Schneiderl?chner, A. Grohe et.al., Proc. of the

29th IEEE PVSC, New Orleans(2002), pp. 130-133.

[4] O. Schultz, M. Hofmann,S. W. G lunz et.al., Proc. of the

31st IEEE PVSC, Orlando (2005).

[5] A. Grohe, B. Fleischhauer, R. Preu et.al., this conference

[6] J. Rentsch, F. Bamberg, K. Roth et al., 31st IEEE PVSEC,

Orlando (2005)

[7] C. Voyer, D. Biro, G. Emanuel et al., Proc.of the 19th EUP-

VSEC (2004), pp. 848-851.

[8] O. Schultz, S. W. Glunz, J. C. Goldschmidt et.al., Proc. of

the 19th EUPVSEC, Paris(2004), pp. 604-607.

[9] R. A. Sinton and A. Cuevas, Appl. Phys. Lett.69,1996, pp.

2510-2512.

[10] D. Macdonald and A. Cuevas, Appl. Phys. Lett.74,1999,

pp. 1710-1712.

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