BCR112E6327中文资料

NPN Silicon Digital Transistor

? Switching circuit, inverter, interface circuit, driver circuit

? Built in bias resistor (R 1=4.7k ?, R 2=4.7k ?)? BCR112U: Two internally isolated transistors with good matching in one multichip package

? BCR112U: For orientation in reel see package information below

? Pb-free (RoHS compliant) package 1)?

Qualified according AEC Q101

BCR112/F BCR112W

EHA07184

Type Marking Pin Configuration

Package BCR112 BCR112F BCR112W

WFs WFs WFs

1=B 1=B 1=B

2=E 2=E 2=E

3=C 3=C 3=C

- - -- - -- - -

SOT23 TSFP-3 SOT323

1Pb-containing package may be available upon special request

Maximum Ratings

Parameter Symbol Value Unit Collector-emitter voltage V CEO50V Collector-base voltage V CBO50

Input forward voltage V i(fwd)30

Input reverse voltage V i(rev)10

Collector current I C100mA

Total power dissipation- BCR112, T S≤102°C BCR112F, T S≤128°C BCR112W, T S≤124°C P tot

200

250

250

mW

Junction temperature T j150°C Storage temperature T stg-65 (150)

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1) BCR112

BCR112F

BCR112W R thJS

≤ 240

≤ 90

≤ 105

-

K/W

1For calculation of R thJA please refer to Application Note Thermal Resistance

Electrical Characteristics at T A = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min.typ.max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO50--V

I C = 100 μA, I B = 0

V(BR)CBO50--Collector-base breakdown voltage

I C = 10 μA, I E = 0

I CBO--100nA Collector-base cutoff current

V CB = 40 V, I E = 0

I EBO-- 1.61mA Emitter-base cutoff current

V EB = 10 V, I C = 0

h FE20---DC current gain1)

I C = 5 mA, V CE = 5 V

Collector-emitter saturation voltage1)

V CEsat--0.3V

I C = 10 mA, I B = 0.5 mA

Input off voltage

V i(off)0.8- 1.5

I C = 100 μA, V CE = 5 V

V i(on)1- 2.5

Input on voltage

I C = 2 mA, V CE = 0.3 V

Input resistor R1 3.2 4.7 6.2k?Resistor ratio R1/R20.91 1.1-AC Characteristics

f T-140-MHz Transition frequency

I C = 10 mA, V CE = 5 V, f = 100 MHz

Collector-base capacitance

C cb-3-pF V CB = 10 V, f = 1 MHz

1Pulse test: t < 300μs; D < 2%

DC current gain h FE = ?(I C )

V CE = 5 V (common emitter configuration)

-1

10 10 10 10

10 h F E

Collector-emitter saturation voltage V CEsat = ?(I C

), I C /I B = 20

-1

V c e s a t

Input on Voltage V i (on) = ?(I

C )

V CE = 0.3V (common emitter configuration)

-1

V i (o n

)

Input off voltage V i(off) = ?(I C

)

V CE = 5V (common emitter configuration)

-1

V i (o f f )

Total power dissipation P tot = ?(T S )BCR112

Total power dissipation P tot = ?(T S )

BCR112F

Total power dissipation P tot = ?(T S )BCR112W

Permissible Pulse Load R thJS = ?(t p )BCR112

10 10 10 10 10 K/W

R t h J S

Permissible Pulse Load P totmax /P totDC = ?(t p )BCR112

P t o t m a x / P

t o t D C

Permissible Pulse Load P totmax /P totDC = ?(

t p )BCR112F

10 10 10 10 P t o t m a x

/P t o t D C

Permissible Puls Load R thJS = ? (t p )BCR112F

10 10 10 10 K/W

R t

h J S

Permissible Puls Load R thJS

= ? (t p )BCR112W

10 10 10 10 10 K/W

R t h J S

Permissible Pulse Load P totmax /P totDC = ?(t p )BCR112W

P t o t m a x / P t o t D C

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

? Infineon Technologies AG 2007.

All Rights Reserved.

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (https://www.sodocs.net/doc/ed7454632.html,). Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.