TISP8210MDR-S中文资料
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex *R
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TISP8210MD Negative Overvoltage Protector – Wide 0 to -110 V Programming Range – Low +5 mA Max. Gate Triggering Current – High -150 mA Min. Holding Current TISP8211MD Positive Overvoltage Protector – Wide 0 to +110 V Programming Range – Low -5 mA Max. Gate Triggering Current – +20 mA Min. Holding Current
Rated for International Surge Wave Shapes
Wave Shape
Standard I PPSM A 2/10GR-1089-CORE
16710/700ITU-T K.20/21/457010/1000
GR-1089-CORE
60
MDRXAKC
NC - No internal connection
G2
A A G1K1K2NC
NC
TISP8210MD Device Symbol
SDRXAJB
A A
G1
G2K1
K2
Circuit Application Diagram
TISP8211MD 8-SOIC Package (Top View)
MDRXALC
NC - No internal connection
G2
K K G1A1A2NC
NC
TISP8211MD Device Symbol
SDRXAKB
A1
A2
K K
G1
G2
TISP821xMD Overvoltage Protectors
Description
The TI S P8210MD / TI S P8211MD protector combination has been designed to protect dual polarity supply rail S LICs (S ubscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning and a.c. power contact and induction. Both devices have been designed using the latest understanding of programmable protector technology to maximize performance.
The TI S P8210MD and TI S P8211MD are complementary programmable protection devices. The program or gate pins (G 1, G 2) are connected to the positive and negative S LIC battery supplies to give protection which will track the S LIC supply levels. The integrated transistor buffer is an essential element in this type of device as the current gain of around 150 reduces battery loading to below 5 mA during a.c. power induction or power contact conditions. Additionally the Base-Emitter junction acts as a reverse blocking diode during operation preventing unnecessary loading of the power supply.
The TI S P8210MD / TI S P8211MD combination is designed to be used in conjunction with the 12.5 ?Bourns ?4A12P-1AH-12R5 Line
Protection Module (LPM). With this solution the application should pass Telcordia G R-1089-CORE testing with the 4A12P-1AH-12R5 acting as the overcurrent protector and coordination element.
The TI S P ?device plus LPM solution is designed to work in harmony with the system primary protectors. G R-1089-CORE issue 3 lists test to allow for three types of primary protection: Carbon Block (1000 V); G as Discharge Tube (600 V) and S olid S tate (400 V). This solution is
designed to be used with the G DT and S olid S tate options. Under lightning conditions the current through the 12.5 ?LPM will be 48 A (600 V /12.5 ?), which is well within the 60 A capability of the TI S P8210MD / TI S P8211MD combination.
How to Order
Device Package Carrier
For Lead-Free Termination Finish
Order As Marking Code
Standard Quantity
TISP8210MD 8-SOIC
Embo ss ed Tape Reeled
TISP8210MDR-S 8210M 2500
M
1128S
-R D M 1128P S I T D
M 1128P S I T t i n U e u l a V l o b m y S g
n i t a R Repetitive pea k off-s tate voltage, V GK V 0 = DRM -120V
Repetitive pea k rever s e voltage, V GA V V 07- = RRM
120
Non-repetitive pea k impul s e current (s ee Note 1)
2/10 μs (Telcordia GR-1089-CORE, 2/10 μs voltage wave s hape)
5/310μs (ITU-T K.44, 10/700 μs voltage wave s hape u s ed in K.20/21/45)10/1000 μs (Telcordia GR-1089-CORE, 10/1000 μs voltage wave s hape)I PPSM
-167-70-60
A
Non-repetitive pea k on-s tate current, 50/60 Hz (s ee Note s 1 and 2)
100 m s 1 s 5 s 300 s 900 s
I TSM
-11-6.5-3.4-1.4-1.3A
Junction temperature T J -55 to +150°C Storage temperature range
T s tg
-65 to +150
°C
NOTES:1.Initially the protector mu s t be in thermal equilibrium with T J = 25 °C. The s urge may be repeated after the device return s to it s initial
condition s .
2.The s e non-repetitive rated terminal current s are for the TISP8210MD and TISP8211MD together. Device (A)-terminal po s itive
current value s are conducted by the TISP8211MD and (K)-terminal negative current value s by the TISP8210MD.
TISP8210MD Absolute Maximum Ratings, T A = 25 °C
TISP821xMD Overvoltage Protectors
TISP8211MD Absolute Maximum Ratings, T A = 25 °C
t i n U e u l a V l o b m y S g
n i t a R Repetitive pea k off-s tate voltage, V GA V 0 = DRM 120V
Repetitive pea k rever s e voltage, V GK V V 07 = RRM
-120
Non-repetitive pea k impul s e current (s ee Note 3)
2/10 μs (Telcordia GR-1089-CORE, 2/10 μs voltage wave s hape)
5/310μs (ITU-T K.44, 10/700 μs voltage wave s hape u s ed in K.20/21/45)10/1000 μs (Telcordia GR-1089-CORE, 10/1000 μs voltage wave s hape)I PPSM
1677060
A
Non-repetitive pea k on-s tate current, 50/60 Hz (s ee Note s 3 and 4)
100 m s 1 s 5 s 300 s 900 s
I TSM
116.53.41.41.3A
Junction temperature T J -55 to +150°C Storage temperature range
T s tg
-65 to +150
°C
NOTES:3.Initially the protector mu s t be in thermal equilibrium with T J = 25°C. The s urge may be repeated after the device return s to it s initial
condition s .
4.The s e non-repetitive rated terminal current s are for the TISP8210MD and TISP8211MD together. Device (A)-terminal po s itive
current value s are conducted by the TISP8211MD and (K)-terminal negative current value s by the TISP8210MD.
t i n U x
a M p y T n i M 3
e r u g i F e e S F n 022001r
o t i c a p a c g n i l p u o c e d e t a G 2C ,1C 5
.210
1E
R O C -9801-R G a i d r o c l e T r o f e c n a t s i s e r s e i r e S 2
R ,1R ?
t i d n o C t s e T r
e t e m a r a P t
i n U x a M p y T n
i M s
n o i I DRM Repetitive pea k off-s tate current V D = V DRM , V GK A μ5-0 = I RRM Repetitive pea k rever s e current
V R = V RRM , V GA A μ5V
07- = V (BO)Brea k over voltage dv/dt = -250V/m s , R SOURCE = 300 ?, V GA V 2
8-V 08- = I H Holding current (I K ) I T = -1 A, di/dt = 1 A/m s , V GA A m 0
51-V 08- = I GT Gate trigger current (I K ) I T = -5 A, t p(g)≥ 20 μs , V GA A m 5V 08- = C O
Off-s tate capacitance
f =1MHz, V d =1V ,V D F
p 0
4V
2± = t i d n o C t s e T r
e t e m a r a P t i n U x a M p
y T n i M s
n o i I DRM Repetitive pea k off-s tate current V D = V DRM , V GA A μ50 = I RRM Repetitive pea k rever s e current
V R = V RRM , V GK A μ5-V
07 = V (BO)Brea k over voltage dv/dt = 250V/m s , R SOURCE = 300 ?, V GK V 2
8V 08 = I H Holding current (I A ) I T = 1 A, di/dt = -1 A/m s , V GK A m 0
2V 08 = I GT Gate trigger current (I A ) I T = 5 A, t p(g)≥ 20 μs , V GK A m 5-V 08 = C O
Off-s tate capacitance
f =1MHz, V d =1V ,V D F
p 0
3V
2± = t i d n o C t s e T r
e t e m a r a P t i n U x
a M p y T n i M s
n o i R θJA
Junction to ambient thermal re s i s tance
P tot =0.52W,T A =70 °C, 5cm 2W
/C °0
61B
C P 4R F ,Recommended Operating Conditions
TISP8210MD Electrical Characteristics, T A = 25 °C
Thermal Characteristics
TISP8211MD Electrical Characteristics, T A = 25 °C
TISP821xMD Overvoltage Protectors
Parameter Measurement Information
Figure 2. TISP8211MD AK Terminal Characteristic
Figure 1. TISP8210MD KA Terminal Characteristic
Quadrant I Blocking Characteristic
Quadrant III Switching Characteristic
+v
-v
V GA
V D
I H
I TSM
I PPSM
V (BO)
I D
+i
-i
V GK(BO)
V RRM
V R
I R
I RRM
PM8XACBa
-v
V GK V D
V (BO)
I H
I TSM
I PPSM
I D
Quadrant III Blocking Characteristic
+i
-i
Quadrant I Switching Characteristic
V GA(BO)
V RRM
V R
I R
I RRM
+v
PM8XABBa
TISP821xMD Overvoltage Protectors
Applications Information
Figure 3. Typical Application Circuit
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