RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC001 wideband integrated circuit is designed for use as a distortion
signature device in analog predistortion systems. It uses Freescale’s newest
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip
design makes it usable from 800 MHz to 2170 MHz. The linearity performances
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and
W-CDMA.
?Typical CW Performance at 2170 MHz, 28 Volts, I DQ = 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
?High Gain, High Efficiency and High Linearity
?Designed for Maximum Gain and Insertion Phase Flatness
?Excellent Thermal Stability
?Characterized with Series Equivalent Large-Signal Impedance Parameters
?N Suffix Indicates Lead-Free Terminations
?In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit Drain-Source Voltage V DSS-0.5, +65Vdc Gate-Source Voltage V GS-0.5, +15Vdc Total Device Dissipation @ T C = 25°C
Derate above 25°C
P D 4.58
0.037
W
W/°C Storage Temperature Range T stg-65 to +150°C Operating Junction Temperature T J150°C Table 2. Thermal Characteristics
Characteristic Symbol Value Unit Thermal Resistance, Junction to Case @ 85°C RθJC27.3°C/W Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model0 (Minimum)
Machine Model M1 (Minimum)
Charge Device Model C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°C
MW4IC001MR4
Rev. 3, 1/2005 Freescale Semiconductor
Technical Data
MW4IC001NR4
MW4IC001MR4
2
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4Table 5. Electrical Characteristics (T C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current (V DS = 65 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS
—
—
1
μAdc
On Characteristics Gate Threshold Voltage (V DS = 10 V, I D = 50 μA)V GS(th)235Vdc Gate Quiescent Voltage (V DS = 28 V, I D = 10 mA)V GS(Q)2 3.75Vdc Drain-Source On-Voltage (V GS = 10 V, I D = 0.05 A)V DS(on)—0.480.9Vdc Forward Transconductance (V DS = 10 V, I D = 0.1 A)g fs
—
0.05
—
S
Dynamic Characteristics
Output Capacitance
(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C oss —45—pF Reverse Transfer Capacitance
(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss
—
0.62
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)Two-Tone Common Source Amplifier Power Gain (V DD = 28 Vdc, P out = 0.9 W PEP , I DQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz)G ps
—
13
—
dB
Two-Tone Drain Efficiency
(V DD = 28 Vdc, P out = 0.9 W PEP , I DQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz)ηD
—29—%
Third Order Intermodulation Distortion
(V DD = 28 Vdc, P out = 0.9 W PEP , I DQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz)IMD —-28—dBc
Input Return Loss
(V DD = 28 Vdc, P out = 0.9 W PEP , I DQ = 12 mA, f = 2170 MHz, Tone Spacing = 100 kHz)IRL —-18—dB
Output Power, 1 dB Compression Point, CW (V DD = 28 Vdc, I DQ = 12 mA, f = 2170 MHz)
P1dB —0.85—W Common-Source Amplifier Power Gain
(V DD = 28 Vdc, P out = 0.9 W CW, I DQ = 12 mA, f = 2170 MHz)G ps 1213—dB Drain Efficiency
(V DD = 28 Vdc, P out = 0.9 W CW, I DQ = 12 mA, f = 2170 MHz)ηD 3538—%Input Return Loss
(V DD = 28 Vdc, P out = 0.9 W CW, I DQ = 12 mA, f = 2170 MHz)
IRL
-10
-16
—
dB
MW4IC001NR4 MW4IC001MR4
3
RF Device Data
Freescale Semiconductor
Figure 1. MW4IC001NR4(MR4) 900 MHz Test Circuit Schematic
Z90.062″ x 0.044″ to 0.615″ Taper Z100.082″ x 0.615″ Microstrip Z110.075″ x 0.044″ Microstrip Z120.625″ x 0.044″ Microstrip Z13 1.375″ x 0.044″ Microstrip
PCB
Rogers RO4350, 0.020″, εr = 3.5
Z1 1.331″ x 0.044″ Microstrip Z20.126″ x 0.076″ Microstrip Z30.065″ x 0.175″ Microstrip Z40.065″ x 0.195″ Microstrip Z50.680″ x 0.145″ Microstrip Z6, Z7 1.915″ x 0.055″ Microstrip Z80.120″ x 0.141″ Microstrip
Table 6. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Designations and Values
Part
Description
Part Number Manufacturer C1, C60.1 μF, 100 V Chip Capacitors C1210C104K5RACTR Kemet C2, C3, C5, C743 pF, 500 V Chip Capacitors 100B430JP500X ATC C412 pF, 500 V Chip Capacitor 100B120JP500X ATC C822 μF, 35 V Tantalum Chip Capacitor T491X226K035AS Kemet C9 4.7 pF, 500 V Chip Capacitor 100B4R7CP500X ATC C10, C110.6-4.5 pF, 500 V Variable Capacitors 27271SL Johanson C12 2.7 pF, 500 V Chip Capacitor 100B2R7CP500X ATC C13 3.3 pF, 500 V Chip Capacitor 100B3R3CP500X ATC L1 5.6 nH Chip Inductor 0805 Series AVX L210 nH Chip Inductor 1008 Series
ATC R1100 W Chip Resistor CRCW12061001F100Dale R2
20 W Chip Resistor
CRCW120620R0F100
Dale
4
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
Figure 2. MW4IC001NR4(MR4) 900 MHz Test Circuit Component Layout
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
MW4IC001NR4 MW4IC001MR4
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 900 MHz
905
50?35?15f1, FREQUENCY (MHz)
Figure 3. Two-Tone Performance versus
Frequency
I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )
I M D ,I N P U T R E T U R N L O S S (d B )I R L ,
?17?19?21?23?25?27?29?31?3346423834302622181410900
895
890
885
880
875
870
865
860
855
15G p s , P O W E R G A I N (d B )
1413121110987610
P out , OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )
I M D ,1
0.1
0.01
10
P out , OUTPUT POWER (WATTS) PEP
Figure 7. Third Order Intermodulation Distortion versus Output Power
1
0.1
0.01
ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )
6
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
Figure 8. MW4IC001NR4(MR4) 1990 MHz Test Circuit Schematic
Z90.067″ x 0.264″ Microstrip Z100.457″ x 0.492″ Microstrip Z110.719″ x 0.022″ Microstrip Z12 1.149″ x 0.022″ Microstrip Z130.677″ x 0.434″ Microstrip Z140.095″ x 0.264″ Microstrip Z150.772″x 0.044″ Microstrip
PCB
Rogers RO4350, 0.020″, εr = 3.5
Z1 1.018″ x 0.044″ Microstrip Z20.495″ x 0.296″ Microstrip Z30.893″ x 0.500″ Microstrip Z4 1.340″ x 0.022″ Microstrip Z50.912″ x 0.022″ Microstrip Z60.241″ x 0.500″ Microstrip Z70.076″ x 0.150″ Microstrip Z80.294″ x 0.150″ Microstrip V GG
Table 7. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Designations and Values
Part
Description
Part Number Manufacturer C1, C622 μF, 35 V Tantalum Capacitors T491X226K035AS Kemet C2, C410 pF, 500 V Chip Capacitors 100B100JCA500X ATC C3, C510 pF, 500 V Chip Capacitor 600S100JW ATC C70.6-4.5 pF, 500 V Variable Capacitor 27271SL
Johanson R1
1 k W Chip Resistor
CRCW12061021F100
Dale
Figure 9. MW4IC001NR4(MR4) 1990 MHz Test Circuit Component Layout
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
MW4IC001NR4 MW4IC001MR4
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 1990 MHz
1990
0401930
?35
?11f1, FREQUENCY (MHz)
Figure 10. Two-Tone Performance versus
Frequency
I N P U T R E T U R N L O S S (d B )I R L ,I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )
I M D ,35302520151051940
1950
1960
1970
1980
?14?17?20?23?26?29?321.3
14.40.1
56P out , OUTPUT POWER (WATTS)
Figure 11. CW Performance versus Output
Power
G p s , P O W E R G A I N (d B )
14.013.613.2
12.8
12.40.20.3
0.4
0.50.6
0.7
0.80.9
1.0
1.1 1.248
403224
16
1
?60?300.01
P out , OUTPUT POWER (WATTS) PEP
Figure 12. Intermodulation Distortion versus
Output Power
I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )
I M D ,?35?40?45
?50?55
0.1
1
?300.01OUTPUT POWER (WATTS) PEP
Figure 13. Intermodulation Distortion Products versus Output Power I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )
I M D ,?35?40?45?50?55?60?65?70?750.1
?30P out , OUTPUT POWER (WATTS) PEP
Figure 14. Third Order Intermodulation
Distortion versus Output Power
T H I R D O R D E R I N T E R M O D U L A T I O N (d B c )
I M D ,?35?40
?45?50?55?60
ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )
ηD , D R A I N E F F I C I E N C Y (%)
8
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
Figure 15. MW4IC001NR4(MR4) 2170 MHz Test Circuit Schematic
Z90.106″ x 0.344″ Microstrip Z100.783″ x 0.500″ Microstrip Z110.847″ x 0.022″ Microstrip Z12 1.055″ x 0.022″ Microstrip Z130.291″ x 0.387″ Microstrip Z140.050″ x 0.287″ Microstrip Z150.950″ x 0.044″ Microstrip
PCB
Rogers RO4350, 0.020″, εr = 3.5
Z1 1.267″ x 0.044″ Microstrip Z20.058″ x 0.044″ Microstrip Z30.758″ x 0.256″ Microstrip Z4 1.073″ x 0.022″ Microstrip Z5 1.361″ x 0.022″ Microstrip Z60.205″ x 0.332″ Microstrip Z70.109″ x 0.150″ Microstrip Z80.210″ x 0.150″ Microstrip V GG
Table 8. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Designations and Values
Part
Description
Part Number Manufacturer C1, C622 μF, 35 V Tantalum Capacitors T491X226K035AS Kemet C2, C410 pF, 500 V Chip Capacitors 100B100JCA500X ATC C3, C510 pF, 500 V Chip Capacitor 600S100JW ATC C70.6-4.5 pF, 500 V Variable Capacitor 27271SL
Johanson R1
1 k W Chip Resistor
CRCW12061021F100
Dale
Figure 16. MW4IC001NR4(MR4) 2170 MHz Test Circuit Component Layout
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
MW4IC001NR4 MW4IC001MR4
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS - 2170 MHz
G p s , P O W E R G A I N (d B )13.813.413.012.612.211.811.4
P out , OUTPUT POWER (WATTS) PEP
Figure 20. Intermodulation Distortion Products versus Output Power I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )
I M D ,0.01
0.1
1
1
0.01
P out , OUTPUT POWER (WATTS) PEP
Figure 21. Third Order Intermodulation
Distortion versus Output Power
0.1
)
)
10
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4Figure 22. Series Equivalent Source and Load Impedance
f MHz Z source
?Z load ?860865870
27.853 + j5.90829.458 + j6.28528.617 + j6.07815.492 + j63.66915.592 + j68.68715.788 + j69.799V DD = 28 V, I DQ = 14 mA, P out = 0.9 W PEP 87588088530.306 + j6.42232.194 + j6.660
31.223 + j6.56715.835 + j70.86315.975 + j71.92016.094 + j73.09133.228 + j6.65616.286 + j74.159********.293 + j6.62416.344 + j75.236900
35.424 + j6.508
16.628 + j76.283
Z source =Test circuit impedance as measured from
gate to ground.Z load
=Test circuit impedance as measured from drain to ground.
Z
source
Z
load
Output Matching Network
f =860 MHz
Z source
f = 900 MHz
Z load
f = 900 MHz
f = 860 MHz Z o = 50 ?
MW4IC001NR4 MW4IC001MR4
11
RF Device Data
Freescale Semiconductor
Figure 23. Series Equivalent Source and Load Impedance
f MHz Z source
?Z load ?192019301940 4.238 + j15.1424.490 + j15.4664.322 + j15.3627.764 + j28.8298.056 + j29.3528.436 + j29.727V DD = 28 V, I DQ = 12 mA, P out = 0.9 W PEP 195019601970 4.605 + j15.7114.905 + j16.0504.752 + j15.9048.809 + j30.2499.183 + j30.7639.598 + j31.2131980 5.071 + j16.23610.030 + j31.6901990 5.262 + j16.44610.546 + j32.2372000
5.487 + j1
6.632
11.054 + j32.726
Z source =Test circuit impedance as measured from
gate to ground.Z load
=Test circuit impedance as measured from drain to ground.
Z source
f = 1920 MHz
Z o = 50 ?
f = 2000 MHz
f = 1920 MHz
f = 2000 MHz
Z load
f MHz Z source
?Z load ?210021102120 2.667 + j12.9032.664 + j13.2242.671 + j13.070 5.892 + j26.3746.092 + j26.7396.281 + j27.094V DD = 28 V, I DQ = 12 mA, P out = 0.9 W PEP
213021402150 2.694 + j13.4312.702 + j13.7002.703 + j13.511 6.540 + j27.5106.748 + j27.7956.996 + j28.1822160 2.745 + j13.9527.300 + j28.6782170 2.754 + j14.0267.562 + j28.9872180
2.784 + j14.206
7.862 + j29.411
Z source =Test circuit impedance as measured from
gate to ground.Z load
=Test circuit impedance as measured from drain to ground.
Z
source
Z
load
Output Matching Network
Z source
f = 2180 MHz
f = 2100 MHz
f = 2100 MHz
Z load
f = 2180 MHz
Z o = 50 ?
Z
source
Z
load
Output Matching Network
12
RF Device Data Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
NOTES
MW4IC001NR4 MW4IC001MR4
13
RF Device Data
Freescale Semiconductor
NOTES
14
RF Device Data Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
NOTES
MW4IC001NR4 MW4IC001MR4
15
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
ISSUE C PLD-1.5PLASTIC
NOTES:
1.INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984.
2.CONTROLLING DIMENSION: INCH
3.RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,AND X.
DIM MIN MAX MIN MAX MILLIMETERS
INCHES A 0.2550.265 6.48 6.73B 0.2250.235 5.72 5.97C 0.0650.072 1.65 1.83D 0.1300.150 3.30 3.81E 0.0210.0260.530.66F 0.0260.0440.66 1.12G 0.0500.070 1.27 1.78H 0.0450.063 1.14 1.60K 0.2730.285 6.937.24L 0.2450.255 6.22 6.48N 0.2300.240 5.84 6.10P 0.0000.0080.000.20Q 0.0550.063 1.40 1.60R 0.2000.210 5.08 5.33S 0.0060.0120.150.31U 0.0060.0120.150.31ZONE V 0.0000.0210.000.53ZONE W 0.0000.0100.000.25ZONE X
0.0000.0100.000.25
J 0.1600.180 4.06 4.57VIEW Y-Y
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