GZF27C中文资料

Document Number https://www.sodocs.net/doc/054798089.html,

17249

Zener Diodes

Features

?Silicon Planar Power Zener Diodes. ?Low profile surface-mount package. ?Low leakage current ?High temperature soldering:260°C/10 sec. at terminals

Mechanical Data

Case: JEDEC DO-219AB (SMF ?) Plastic Case

Packaging codes/options:

GS18 - 10 K per 13 " reel, (8 mm tape), 50 K/box GS08 - 3 K per 7 " reel, (8 mm tape), 30 K/box Weight: approx. 0.01 g

Absolute Maximum Ratings

T amb = 25°C, unless otherwise specified

1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (≥ 40 μm thick)

Thermal Characteristics

T amb = 25°C, unless otherwise specified

1) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads (≥ 40 μm thick)

Parameter

Test condition

Symbol

Value Unit

Zener current (see Table "Characteristics")see page 2Power dissipation

T A = 25°C

P tot

8001)

mW Parameter

Test condition Symbol Value Unit Thermal resistance junction to ambient air

1)

R θJA 180K/W Maximum junction temperature T j 150°C Storage temperature range

T STG

- 55 to + 150

°C

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Electrical Characteristics

Maximum V F = 1.2 V at I F = 200 mA

1) Pulse test: tp ≤ 5 ms

Partnumber

Marking Code

Zener Voltage Range 1)

Differential Resistance Temperature Coefficient T est Current Reverse Current at Reverse Voltage V Z @ I ZT

r dif @ I Z

αZ @ I Z I ZT I R V R V

?%/°C mA μA V

min

max typ max min max max GZF3V6C W5 3.4 3.848-0.14-0.041001001GZF3V9C W6 3.7 4.148-0.14-0.04100501GZF4V3C W74 4.647-0.12-0.02100251GZF4V7C W8 4.4537-0.10100101GZF5V1C W9 4.8 5.436-0.08-0.210051GZF5V6C WA 5.2624-0.040.04100102GZF6V2C WB 5.8 6.623-0.010.0610052GZF6V8C WC 6.47.21300.07100103GZF7V5C WD 77.91200.07100503GZF8V2C WE 7.78.7120.030.08100103GZF9V1C WF 8.59.6240.030.0850105GZF10C WG 9.410.6240.050.095077.5GZF11C WH 10.411.6470.050.15048.2GZF12C WI 11.412.7470.050.15039.1GZF13C WK 12.414.15100.050.150210GZF15C WL 13.815.65100.050.150111GZF16C WM 15.317.16150.060.1125112GZF18C WN 16.819.16150.060.1125113GZF20C WO 18.821.26150.060.1125115GZF22C WP 20.823.36150.060.1125116GZF24C WR 22.825.67150.060.1125118GZF27C WS 25.128.97150.060.1125120GZF30C WT 28328150.060.1125122GZF33C WU 31358150.060.1125124GZF36C WW 343821400.060.1110127GZF39C WX 374121400.060.1110130GZF43C WY 404624450.070.1210133GZF47C WZ 445024450.070.1210136GZF51C X1485425600.070.1210139GZF56C X2526025600.070.1210143GZF62C X3586625800.080.1310147GZF68C X4647225800.080.1310151GZF75C X57079301000.080.1310156GZF82C X67787301000.080.1310162GZF91C

X7

85

96

60

200

0.09

0.13

5

1

68

Document Number https://www.sodocs.net/doc/054798089.html,

Typical Characteristics (T amb = 25 °C unless otherwise specified)

Figure 1. Forward characteristics

Figure

2. Admissible Power Dissipation vs. Ambient Temperature

Figure

3. Capacitance vs. Zener Voltage

17364

I V F

0.4

10

101010

1010

10101-2

-3-5

3

mA

P

800600

400

200

17365

V

2

17366

Package Dimensions in mm

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Blistertape für SMF

Document Number https://www.sodocs.net/doc/054798089.html,

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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