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BC817-16-AE3-R中文资料

BC817-16-AE3-R中文资料
BC817-16-AE3-R中文资料

BC817N P N EPITAXIAL SILICON TRANSISTOR

NPN GENERAL PURPOSE

AMPLIFIER

Description

The UTC BC817 is designed for general purpose medium power

amplifiers and switches requiring collector currents to 1.2A.

*Pb-free plating product number:BC817L

PIN CONFIGURATION

PIN NO.PIN NAME

1 EMITTER

2 BASE

3 COLLECTOR

ORDERING INFORMATION

Order Number

Package Packing

Normal Lead Free Plating

BC817-16-AE3-R BC817L-16-AE3-R SOT-23Tape & Reel

BC817-25-AE3-R BC817L-25-AE3-R SOT-23Tape & Reel

BC817-40-AE3-R BC817L-40-AE3-R SOT-23Tape & Reel

MARKING

ABSOLUTE MAXIMUM RATING(Ta=25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS

UNIT Collector-Emitter Voltage V CEO 45 V

Collector-Base Voltage V CES 50 V

Emitter-Base Voltage V EBO 5.0 V

Collector Current -Continuous I C 1.5 A

Power Dissipation Derate above 25°C P D

350

2.8

mW

mW/°C

Junction Temperature T J 150

Storage Temperature T STG-40 ~ +150

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0 ~+70 operating temperature range

and assured by design from –20 ~+85 .

THERMAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)

CHARACTERISTIC SYMBOL

RATING

(Note)

UNIT

Thermal Resistance, Junction to Ambient θJA 350

°C/W

Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST

CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage V(BR)CEO I C=10mA, I B=0 45 V Collector-Base Breakdown Voltage V(BR)CES I C=100μA,I E=0 50 V Emitter-Base Breakdown Voltage V(BR)EBO I E=10μA, Ic=0 5 V

Collector-Cutoff Current I CBO V CB=20V

V CB=20V,T a=150°C

100

5

nA

μA

ON CHARACTERISTICS

h FE1* Ic=100mA,V CE=1.0V See Classification

DC Current Gain

h FE2 Ic=500mA,

V CE=1.0V 40

Collector-Emitter Saturation Voltage V CE(SAT) Ic=500mA,I B=50Ma 0.7V Base-Emitter On Voltage V BE(ON) Ic=500mA,

V CE=1.0V 1.2V

CLASSIFICATION OF hFE1*

RANK BC817-16 BC817-25 BC817-40 RANGE 100-250 160-400 250-600

TYPICAL CHARACTERISTICS

5004003002001000

0.001

0.01

0.1

12

T y p i c a l P u

l s e d C u r r e n t G a i n , h F E

Typical Pulsed Current Gain vs Collector Current

0.01

0.1

3

1

0.10.20.30.40.50.6Collector-Emitter Saturation Voltage vs Collector Current

C o l l e c t o r -E m i t t e

r V o l t a g e , V C E S A T (V )

Collector Current, I C (A)

Collector Current, I C (A)

1

10

100

1000

0.2

0.40.60.811.2Base-Emitter Saturation Voltage vs Collector Current

B a s e -E m i t t e r V o l t a g e , V B E (S A T )(V )

0.001

0.01

0.1

1

0.2

0.40.60.81Base-Emitter On Voltage vs Collector Current B a s e -E m i t t e r O n V o l t

a g e , V B E (O N ) (V )

Collector Current, I C (mA)Collector Current, I C (A)

C o l l e c t o r -B a s E C a p a c i t a n c e , C c (p F )

25

50

75

100

125

150

0.1

110100

Collector-Cutoff Current vs Ambient Temperature

C o l l e c t o r C u r r e n t , I C B O (n A )

Ambient Temperature, T A ( )

4

128

16

20

24

28

010203040 Collector-Base Capacitance vs Collector-Base Voltage

Collector-Base Voltage, V CB (V)

TYPICAL CHARACTERISTICS(cont.)

1101001000

100

200

300

400

500

G

a

i

n

B

a

n

d

w

i

d

t

h

P

r

o

D

u

c

t

,

h

F

E

(

M

H

z

)

Gain Bandwidth Product vs Collector Current

0255075100125150

50

100

150

200

250

300

350

Power Dissipation vs Ambient Temperature

P

o

w

e

r

D

i

s

s

i

p

a

t

i

o

n

,

P

D

(

m

W

)

Collector Current, I C(mA)Temperature ( )

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