BC817N P N EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
Description
The UTC BC817 is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2A.
*Pb-free plating product number:BC817L
PIN CONFIGURATION
PIN NO.PIN NAME
1 EMITTER
2 BASE
3 COLLECTOR
ORDERING INFORMATION
Order Number
Package Packing
Normal Lead Free Plating
BC817-16-AE3-R BC817L-16-AE3-R SOT-23Tape & Reel
BC817-25-AE3-R BC817L-25-AE3-R SOT-23Tape & Reel
BC817-40-AE3-R BC817L-40-AE3-R SOT-23Tape & Reel
MARKING
ABSOLUTE MAXIMUM RATING(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS
UNIT Collector-Emitter Voltage V CEO 45 V
Collector-Base Voltage V CES 50 V
Emitter-Base Voltage V EBO 5.0 V
Collector Current -Continuous I C 1.5 A
Power Dissipation Derate above 25°C P D
350
2.8
mW
mW/°C
Junction Temperature T J 150
Storage Temperature T STG-40 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0 ~+70 operating temperature range
and assured by design from –20 ~+85 .
THERMAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
CHARACTERISTIC SYMBOL
RATING
(Note)
UNIT
Thermal Resistance, Junction to Ambient θJA 350
°C/W
Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST
CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CEO I C=10mA, I B=0 45 V Collector-Base Breakdown Voltage V(BR)CES I C=100μA,I E=0 50 V Emitter-Base Breakdown Voltage V(BR)EBO I E=10μA, Ic=0 5 V
Collector-Cutoff Current I CBO V CB=20V
V CB=20V,T a=150°C
100
5
nA
μA
ON CHARACTERISTICS
h FE1* Ic=100mA,V CE=1.0V See Classification
DC Current Gain
h FE2 Ic=500mA,
V CE=1.0V 40
Collector-Emitter Saturation Voltage V CE(SAT) Ic=500mA,I B=50Ma 0.7V Base-Emitter On Voltage V BE(ON) Ic=500mA,
V CE=1.0V 1.2V
CLASSIFICATION OF hFE1*
RANK BC817-16 BC817-25 BC817-40 RANGE 100-250 160-400 250-600
TYPICAL CHARACTERISTICS
5004003002001000
0.001
0.01
0.1
12
T y p i c a l P u
l s e d C u r r e n t G a i n , h F E
Typical Pulsed Current Gain vs Collector Current
0.01
0.1
3
1
0.10.20.30.40.50.6Collector-Emitter Saturation Voltage vs Collector Current
C o l l e c t o r -E m i t t e
r V o l t a g e , V C E S A T (V )
Collector Current, I C (A)
Collector Current, I C (A)
1
10
100
1000
0.2
0.40.60.811.2Base-Emitter Saturation Voltage vs Collector Current
B a s e -E m i t t e r V o l t a g e , V B E (S A T )(V )
0.001
0.01
0.1
1
0.2
0.40.60.81Base-Emitter On Voltage vs Collector Current B a s e -E m i t t e r O n V o l t
a g e , V B E (O N ) (V )
Collector Current, I C (mA)Collector Current, I C (A)
C o l l e c t o r -B a s E C a p a c i t a n c e , C c (p F )
25
50
75
100
125
150
0.1
110100
Collector-Cutoff Current vs Ambient Temperature
C o l l e c t o r C u r r e n t , I C B O (n A )
Ambient Temperature, T A ( )
4
128
16
20
24
28
010203040 Collector-Base Capacitance vs Collector-Base Voltage
Collector-Base Voltage, V CB (V)
TYPICAL CHARACTERISTICS(cont.)
1101001000
100
200
300
400
500
G
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i
n
B
a
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d
w
i
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t
h
P
r
o
D
u
c
t
,
h
F
E
(
M
H
z
)
Gain Bandwidth Product vs Collector Current
0255075100125150
50
100
150
200
250
300
350
Power Dissipation vs Ambient Temperature
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
,
P
D
(
m
W
)
Collector Current, I C(mA)Temperature ( )