DTS6401

鼎日株式會

鼎日株式會社

Ding Day Co., LTD.

P-Channel Enhancement Mode Field Effect Transistor

D

G S

ABSOLUTE MAXIUM RATINGS （T A =25℃ unless otherwise noted ）

Parameter Symbol Limit Unit

Drain-Source V oltage V DS -60 V Gate-Source V oltage

V GS ±20 V

I D -5.2 A

Drain Current-Continuous a@Tj=125℃

- Pulse b d

I DM -34

A Drain-source Diode Forward Current a I S -1.3 A

Maximum Power Dissipation a P D 2.5 W Operating Junction and Storage Temperature Range

T J ,T STG -55 to 150 ℃

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to Ambient a Rth J A 100 ℃/W

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ELECTRICAL CHARACTERISTICS (T A =25℃ unless otherwise noted)

Parameter Symbol

Condition Min Typ Max Unit

OFF CHARACTERISTICS Drain-Source Breakdown V oltage BV DSS V GS =0V ,I D =-250μA -60 V Zero Gate V oltage Drain Current I DSS V DS =-48V ,V GS =0V -1 μA Gate-Body Leakage

I GSS

V GS =±20V ,V DS =0V ±100

nA

ON CHARACTERITICS

Gate Threshold V oltage

V GS (th) V DS =V GS ,I D =-250μA -1 -1.5 -2.5 V V GS =-10V ,I D =-4.8A 40 45

Drain-Source On-State Resistance R DS(ON) V GS =-4.5V ,I D =-3.2A

48 52 m Ω

Forward Transconductance ɡFS

V GS =-5V ,I D =-5.6A 5 S

DAYNAMIC CHARACTERISTICS Input Capacitance C ISS 582 pF Output Capacitance C OSS 125 pF Reverse Transfer Capacitance C RSS

V DS =-15V ,V GS =0V

f=1.0MH Z

86 pF

SWITCHING CHARACTERISISTICS Turn-On Delay Time t D(ON) 9 ns Rise Time

tr 10 ns Turn-Off Delay Time t D(OFF) 38 ns Fall Time tf V DD =-15V I D =-5.3A, V GEN =-4.5V R L =10ohm R GEN =10ohm

23 ns Total Gate Charge Q ɡ 11.7 nC

Gate-Source Charge Q ɡs 2.1 nC Gate-Drain Charge

Q ɡd

V DS =-15V ,I D =-1A

V GS =-10V

2.9 nC

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ELECTRICAL CHARACTERICS (TA=25℃unless otherwise noted)

Parameter Symbol

Condition

Min

Typ

Max Unit DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward V oltage V SD V GS=0V,I S=-1.2A -0.84

-1.2

V

Notes

a.Surface Mounted on FR4 Board, t≦10sec

b.Pulse Test: Pulse Width≦300Us, Duty≦2%

c.Guaranteed by design, not subject to production testing.

- V DS, Drain-to-Source Voltage (V) -V GS, Gate-to-source Voltage (V)

Figure 1.Output Characteristics Figure 2.Transfer Characteristics

-VGS, Drain-to Source Voltage

Figure3.Capacitance Figure4. On-Resistance Variation with Temperature

鼎日株式會社

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V GS=-10V

I D=-5.6A

DTS6401

鼎日株式會社

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