STP9NC60中文资料

STP9NC60STP9NC60FP

N -CHANNEL 600V -0.6?-9A TO-220/TO-220FP

PowerMESH ?ΙΙMOSFET

νTYPICAL R DS(on)=0.6?

νEXTREMELY HIGH dv/dt CAPABILITY ν100%AVALANCHE TESTED

νNEW HIGH VOLTAGE BENCHMARK ν

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH ?II is the evolution of the first generation of MESH OVERLAY ?.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed,gate charge and ruggedness.

APPLICATIONS νHIGH CURRENT,HIGH SPEED SWITCHING νSWITH MODE POWER SUPPLIES (SMPS)νDC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

?

INTERNAL SCHEMATIC DIAGRAM

February 2000

TO-220TO-220FP

12

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value

Unit STP9NC60STP9NC60FP

V DS Drain-source Voltage (V GS =0)

600V V DGR Drain-gate Voltage (R GS =20k ?)600

V V GS Gate-source Voltage

±30

V I D Drain Current (continuous)at T c =25o C 9.0 5.2A I D Drain Current (continuous)at T c =100o

C 5.7 3.3A I DM (?)Drain Current (pulsed)

3636A P tot Total Dissipation at T c =25o C 12540W Derating Factor

1.00.32W/o

C dv/dt(1)Peak Diode Recovery voltage slope 4.5 4.5V/ns V ISO Insulation Withstand Voltage (DC)

2000

V

T s tg Storage Temperature

-65to 150

o C T j

Max.Operating Junction Temperature

150

o C (?)Pulse width limited by safe operating area

(1)I SD ≤9A,di/dt ≤200A/μs,V DD ≤V (BR)DSS ,Tj ≤T JMAX

TYPE V DSS R DS(on)I D STP9NC60STP9NC60FP

600V 600V

<0.75?<0.75?

9.0A 5.2A

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THERMAL DATA

TO-220TO-220FP

R thj-ca se Thermal Resistance Junction-case Max 1.0 3.12o C/W

R t hj-a mb R thc-sin k

T l Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

o C/W

o C/W

o C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I AR Avalanche Current,Repetitive or Not-Repetitive

(pulse width limited by T j max,δ <1%)

9A

E AS Single Pulse Avalanche Energy

(starting T j=25o C,I D=I AR,V DD=50V)

850mJ

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-source

Breakdown Voltage

I D=250μA V GS=0600V

I DSS Zero Gate Voltage

Drain Current(V GS=0)V DS=Max Rating

V DS=Max Rating T c=125o C

1

50

μA

μA

I GSS Gate-body Leakage

Current(V DS=0)

V GS=±30V±100nA ON(?)

Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS=V GS I D=250μA234V R DS(on)Static Drain-source On

Resistance

V GS=10V I D=4A0.60.75?

I D(on)On State Drain Current V DS>I D(on)x R DS(on)max

V GS=10V

9.0A DYNAMIC

Symbol Parameter Test Conditions Min.Typ.Max.Unit

g fs(?)Forward

Transconductance

V DS>I D(on)x R DS(on)max I D=4A10S

C is s C os s C rs s Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V DS=25V f=1MHz V GS=01400

196

31

pF

pF

pF

STP9NC60/FP 2/9

ELECTRICAL CHARACTERISTICS(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t d(on) t r Turn-on Delay Time

Rise Time

V DD=300V I D=4.5A

R G=4.7 ?V GS=10V

(Resistive Load,see fig.3)

28

15

ns

ns

Q g Q gs Q gd Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V DD=480V I D=9.0A V GS=10V44

10.5

19.5

62nC

nC

nC

SWITCHING OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t d(off) t f Turn-off Delay Time

Fall Time

V DD=300V I D=4.5A

R G=4.7 ?V GS=10V

(Resistive Load,see fig.3)

53

30

ns

ns

t r(Vof f) t f

t c Off-voltage Rise Time

Fall Time

Cross-over Time

V DD=480V I D=9.0A

R G=4.7 ?V GS=10V

(Inductive Load,see fig.5)

15

12

24

ns

ns

ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I SD I SDM(?)Source-drain Current

Source-drain Current

(pulsed)

9.0

36

A

A

V SD(?)Forward On Voltage I SD=9A V GS=0 1.6V

t rr Q rr I RRM Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

I SD=9A di/dt=100A/μs

V DD=100V T j=150o C

(see test circuit,fig.5)

610

5.4

17

ns

μC

A

(?)Pulsed:Pulse duration=300μs,duty cycle1.5%

(?)Pulse width limited by safe operating area

Safe Operating Area for TO-220Safe Operating Area for TO-220FP

STP9NC60/FP

3/9

Thermal Impedance for TO-220 Output Characteristics Transconductance Thermal Impedance forTO-220FP Transfer Characteristics

Static Drain-source On Resistance

STP9NC60/FP 4/9

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature

Source-drain Diode Forward Characteristics Capacitance Variations

Normalized On Resistance vs Temperature

STP9NC60/FP

5/9

Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.2:Unclamped Inductive Waveform Fig.4:Gate Charge test Circuit

Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery Times

STP9NC60/FP

6/9

DIM.mm

inch MIN.TYP.

MAX.MIN.TYP.

MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40

2.72

0.094

0.107

D1 1.27

0.050

E 0.490.700.0190.027

F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067

G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.0

10.40

0.393

0.409

L216.4

0.645

L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.

3.75 3.85

0.147

0.151

L6

A

C

D

E

D 1

F

G

L7

L2

Dia.

F 1

L5

L4

H 2

L9

F 2

G 1

TO-220MECHANICAL DATA

P011C

STP9NC60/FP

7/9

DIM.

mm inch MIN.

TYP.

MAX.MIN.TYP.

MAX.A 4.4 4.60.1730.181B 2.5 2.70.0980.106D 2.5 2.750.0980.108E 0.450.70.0170.027F 0.7510.0300.039F1 1.15 1.70.0450.067F2 1.15 1.70.0450.067G 4.95 5.20.1950.204G1 2.4 2.70.0940.106H 10

10.4

0.393

0.409

L216

0.630

L328.630.6 1.126 1.204L49.810.60.3850.417L615.916.40.6260.645L799.30.3540.366?

3 3.2

0.118

0.126

L2

A

B

D

E

H

G

L6

ˉ

F

L3

G 1

123

F 2

F 1

L7

L4

TO-220FP MECHANICAL DATA

STP9NC60/FP

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STP9NC60/FP

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