2SD882L-E-TM3-B中文资料
UNISONIC TECHNOLOGIES CO., LTD
2SD882
NPN SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A * Low saturation voltage * Complement to 2SB772
APPLICATIONS
* Audio power amplifier * DC-DC convertor * Voltage regulator
*Pb-free plating product number: 2SD882L
ORDERING INFORMATION
Order Number
Pin Assignment
Normal Lead Free Plating Package 1 2 3 Packing
2SD882-x-T60-K 2SD882L-x-T60-K TO-126 E C B Bulk 2SD882-x-T6C-K 2SD882L-x-T6C-K TO-126C E C B Bulk 2SD882-x-TM3-T 2SD882L-x-TM3-T TO-251 B C E Tube 2SD882-x-TN3-R 2SD882L-x-TN3-R TO-252 B C E Tape Reel 2SD882-x-TN3-T 2SD882L-x-TN3-T TO-252 B C E Tube 2SD882-x-T9N-B 2SD882L-x-T9N-B TO-92NL E C B Tape Box 2SD882-x-T9N-K 2SD882L-x-T9N-K TO-92NL E C B Bulk
ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified )
PARAMETER SYMBOL RATINGS
UNIT
Collector-Base Voltage V CBO 40 V
Collector-Emitter Voltage V CEO 30 V
Emitter-Base Voltage V EBO 5 V
DC I C 3 A
Collector Current
Pulse I CP 7 A
Base Current I B 0.6 A
TO-92NL 0.5
W
Collector Dissipation Ta=25 TO-251/TO-252/
TO-126/TO-126C P C
1 W
Junction Temperature T J +150
Storage Temperature T STG-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage BV CBO I C=100μA, I E=0 40 V Collector-Emitter Breakdown Voltage BV CEO I C=1mA, I B=0 30 V Emitter-Base Breakdown Voltage BV EBO I E=100μA, I C=0 5 V Collector Cut-off Current I CBO V CB=30V, I E=0
1000
nA Emitter Cut-off Current I EBO V EB=3V, I C=0
1000
nA
h FE1V CE=2V, I C=20mA 30
200
DC Current Gain (Note 1)
h FE2V CE=2V, I C=1A 100
150
400
Collector-Emitter Saturation Voltage V CE(SAT)I C=2A, I B=0.2A
0.3
0.5
V Base-Emitter Saturation Voltage V BE(SAT)I C=2A, I B=0.2A
1.0
2.0
V Current Gain Bandwidth Product f T V CE=5V, I C=0.1A
80
MHz
Output Capacitance Cob V CB=10V, I E=0, f=1MHz 45 pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF h FE2
RANK Q P E
RANGE 100-200 160-320 200-400
TYPICAL CHARACTERISTICS
Static Characteristics
Collector -Emitter voltage (V)
C o l l e c t o r C u r r e n t , I c (A )
00.40.81.21.6Case Temperature , T C (℃)
Derating Curve of Safe Operating
200
15010050
-50
Current Gain-Bandwidth P roduct
C u r r e n t G a i n -B a n d
w i d t h P r o d u c t , F T (M H z )
Collector-Emitter Voltage
Safe Operating Area
Collector Current, Ic (A)
103
102
10110010-2
10-1100101
100
101
102
DC Current Gain
Collector Current, I C (mA)
Collector Current, I C (mA)
Saturation Voltage
D C C u r r e n t G a i n , h F E
101010101010
10
10
10101010
10
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
Collector-Base Voltage (V)
O u t p u t C a
p a c i t a n c e (p F )
100
103
10
2
101
100
10-110-210-3