2N5612中文资料

Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612

DESCRIPTION

?With TO-66 package

?Excellent safe operating area ?Low collector saturation voltage

APPLICATIONS

?For general-purpose amplifier ; and switching applications

PINNING(see Fig.2)

PIN DESCRIPTION 1

Base

2 Emitter

3 Collector

Absolute maximum ratings(Ta=℃)

SYMBOL PARAMETER

CONDITIONS VALUE UNIT

2N5606 80

2N5608/5610 10

V CBO Collector-base voltage

2N5612

Open emitter 120

V

2N5606 60

2N5608/5610 80

V CEO Collector-emitter voltage 2N5612

Open base 100 V

V EBO Emitter-base voltage Open collector 5 V I C Collector current 5

A

P D

Total power dissipation

T C =25℃ 25 W T j Junction temperature 150

℃

T stg Storage temperature

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT R th j-c

Thermal resistance junction to case

4.37

℃/W

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2

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT

2N5606 60

2N5608/5610 80 V CEO(SUS)

Collector-emitter

sustaining voltage

2N5612

I C =50mA ;I B =0 100

V V CEsat Collector-emitter saturation voltage I C =1A; I B =0.1A 0.5 V

V BE Base-emitter on voltage I C =2.5A ; V CE =5V 1.5 V I CBO Collector cut-off current V CB =Rated V CBO ; I E =0 0.1 mA I CEO Collector cut-off current V CE = Rated V CEO ,I B =0 1.0 mA

I EBO

Emitter cut-off current

V EB =5V; I C =0 0.1 mA

2N5606/5610 70 200

h FE

DC current gain

2N5608/5612

I C =2.5A ; V CE =5V

30

90

2N5606/5610 70

f T Transition frequency

2N5608/5612

I C =0.5A ; V CE =10V

60

MHz

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3

PACKAGE OUTLINE

Fig.2 outline dimensions

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