IRF620中文资料

IRF620IRF620FI

N -CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

s TYPICAL R DS(on)=0.55?

s AVALANCHE RUGGED TECHNOLOGY s 100%AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100o C

APPLICATIONS s HIGH CURRENT,HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS)s MOTOR CONTROL,AUDIO AMPLIFIERS s INDUSTRIAL ACTUATORS s DC-DC &DC-AC CONVERTERS FOR TELECOM,INDUSTRIAL AND CONSUMER ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

123

TO-220ISOWATT220

November 1996TYPE V DSS R DS(on)I D IRF620IRF620FI

200V 200V

<0.8?<0.8?

6A 4A

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value

Unit

IRF620

IRF620FI

V D S Drain-source Voltage (V GS =0)200V V DG R Drain-gate Voltage (R GS =20k ?)200V V GS Gate-source Voltage

±20

V I D Drain Current (cont.)at T c =25o C 64A I D Drain Current (cont.)at T c =100o C 42A I D M (?)Drain Current (pulsed)

2424A P tot Total Dissipation at T c =25o C 7030W Derating Factor

0.560.24W/o C V ISO Insulation Withstand Voltage (DC)

2000

V

T stg Storage Temperature

-65to 150

o C T j

Max.Operating Junction Temperature

150o

C

(?)Pulse width limited by safe operating area

123

1/9

THERMAL DATA

TO-220ISOWATT220

R thj-cas e Thermal Resistance Junction-case Max 1.79 4.17o C/W

R thj-amb R th c-s

T l Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

o C/W

o C/W

o C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I A R Avalanche Current,Repetitive or Not-Repetitive

(pulse width limited by T j max,δ <1%)

6A

E AS Single Pulse Avalanche Energy

(starting T j=25o C,I D=I AR,V D D=25V)

20mJ

E AR Repetitive Avalanche Energy

(pulse width limited by T j max,δ <1%)

5mJ

I A R Avalanche Current,Repetitive or Not-Repetitive

(T c=100o C,pulse width limited by T j max,δ <1%)

4A

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-source

Breakdown Voltage

I D=250μA V G S=0200V

I DS S Zero Gate Voltage

Drain Current(V GS=0)V DS=Max Rating

V DS=Max Rating x0.8T c=125o C

10

100

μA

μA

I G SS Gate-body Leakage

Current(V D S=0)

V GS=±20V±100nA ON(?)

Symbol Parameter Test Conditions Min.Typ.Max.Unit V G S(th)Gate Threshold Voltage V DS=V GS I D=250μA234V R DS(on)Static Drain-source On

Resistance

V GS=10V I D=3A0.550.8?

I D(on)On State Drain Current V DS>I D(on)x R D S(on)max V G S=10V6A DYNAMIC

Symbol Parameter Test Conditions Min.Typ.Max.Unit

g fs(?)Forward

Transconductance

V DS>I D(on)x R D S(on)max I D=3A 1.5 3.5S

C iss C oss C rss Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V DS=25V f=1MHz V G S=0460

90

20

600

120

30

pF

pF

pF

IRF620/FI 2/9

ELECTRICAL CHARACTERISTICS(continued)

SWITCHING RESISTIVE LOAD

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t d(on) t r t d(off) t f Turn-on Time

Rise Time

Turn-off Delay Time

Fall Time

V DD=100V I D=3A

R G=50?V GS=10V

(see test circuit)

30

70

135

45

45

100

190

65

ns

ns

ns

ns

Q g Q gs Q gd Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

I D=6A V GS=10V

V DD=Max Rating x0.8

(see test circuit)

20

6

8

30nC

nC

nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I S D I SDM(?)Source-drain Current

Source-drain Current

(pulsed)

6

24

A

A

V S D(?)Forward On Voltage I SD=6A V GS=0 1.5V

t rr Q rr Reverse Recovery

Time

Reverse Recovery

Charge

I SD=6A di/dt=100A/μs

V DD=100V T j=150o C

170

1

ns

μC

(?)Pulsed:Pulse duration=300μs,duty cycle1.5%

(?)Pulse width limited by safe operating area

Safe Operating Area for TO-220Safe Operating Area for ISOWATT220

IRF620/FI

3/9

Thermal Impedance for TO-220 Derating Curve for TO-220 Output Characteristics Thermal Impedance for ISOWATT220 Derating Curve for ISOWATT220 Transfer Characteristics

IRF620/FI 4/9

IRF620/FI Transconductance Static Drain-source On Resistance

Maximum Drain Current vs Temperature Gate Charge vs Gate-source Voltage

Normalized Breakdown Voltage vs Temperature Capacitance Variations

5/9

IRF620/FI

Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms Switching Time Test Circuit Gate Charge Test Circuit

6/9

DIM.mm

inch MIN.TYP.

MAX.MIN.TYP.

MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40

2.72

0.094

0.107

D1 1.27

0.050

E 0.490.700.0190.027

F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067

G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.0

10.40

0.393

0.409

L216.4

0.645

L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.

3.75 3.85

0.147

0.151

L6

A

C

D

E

D 1

F

G

L7

L2

Dia.

F 1

L5

L4

H 2

L9

F 2

G 1

TO-220MECHANICAL DATA

P011C

IRF620/FI

7/9

DIM.

mm inch MIN.

TYP.

MAX.MIN.TYP.

MAX.A 4.4 4.60.1730.181B 2.5 2.70.0980.106D 2.5 2.750.0980.108E 0.40.70.0150.027F 0.7510.0300.039F1 1.15 1.70.0450.067F2 1.15 1.70.0450.067G 4.95 5.20.1950.204G1 2.4 2.70.0940.106H 10

10.4

0.393

0.409

L216

0.630

L328.630.6 1.126 1.204L49.810.60.3850.417L615.916.40.6260.645L799.30.3540.366?

3 3.2

0.118

0.126

L2

A

B

D

E

H

G

L6

?

F

L3

G 1

123

F 2

F 1

L7

L4

ISOWATT220MECHANICAL DATA

P011G

IRF620/FI

8/9

IRF620/FI Information furnished is believed to be accur ate and reliable.Howev er,SGS-THOMSON Microelectronics assumes no respon sability for the consequ enc es of use of such information nor for any infringem ent of paten ts or other rights of third parties which may results from its use.No license is grante d by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelec tronics.Specifications mentioned in this publication are subject to chan ge without notice.This publicat ion superse des and replaces all information previou sly supplie d.

SGS-THOMSON Microelec tronics produ cts are not autho rized for use as critical compone nts in lifesupport devic es or system s without expres s written app roval of SGS-THOMSON Microelectonics.

?1996SGS-THOMSON Microele ctronics-Printed in Italy-All Rights Reserve d

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia-Brazil-Canada-China-France-Germany-Hong Kong-Italy-Japan-Korea-Malays ia-Malta-Morocco-The Netherlands-Singap ore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdo m-U.S.A

.

9/9