BUZ11中文资料

BUZ11

N -CHANNEL 50V -0.03?-33A TO-220

STripFET ?MOSFET

s TYPICAL R DS(on)=0.03?

s AVALANCHE RUGGED TECHNOLOGY s 100%AVALANCHE TESTED s HIGH CURRENT CAPABILITY

s

175o C OPERATING TEMPERATURE

APPLICATIONS

s HIGH CURRENT,HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS

s DC-DC &DC-AC CONVERTERS

s MOTOR CONTROL,AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION,ABS,AIR-BAG,LAMPDRIVERS,Etc.)

?

INTERNAL SCHEMATIC DIAGRAM

July 1999123

TO-220

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value Unit V DS Drain-source Voltage (V GS =0)50V V DGR Drain-gate Voltage (R GS =20k ?)50V V GS Gate-source Voltage

±20V I D Drain Current (continuous)at T c =25o C 33A I DM Drain Current (pulsed)

134A P tot Total Dissipation at T c =25o C 90W

T s tg Storage Temperature

-65to 175

o C T j

Max.Operating Junction Temperature 175o

C

DIN HUMIDITY CATEGORY (DIN 40040)E IEC CLIMATIC CATEGORY (DIN IEC 68-1)

55/150/56

First digit of the datecode being Z or K identifies silicon characterized in this datasheet.

TYPE V DSS R DS(o n)I D BUZ11

50V

<0.04?

33A

1/8

THERMAL DATA

R thj-case Thermal Resistance Junction-case Max 1.67o C/W R thj-amb Thermal Resistance Junction-ambient Max62.5o C/W

AVALANCHE CHARACTERISTICS

Symbol Parameter Value Unit

I AR Avalanche Current,Repetitive or Not-Repetitive

(pulse width limited by T j max,δ <1%)

33A

E AS Single Pulse Avalanche Energy

(starting T j=25o C,I D=I AR,V DD=25V)

200mJ

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-source

Breakdown Voltage

I D=250μA V GS=050V

I DSS Zero Gate Voltage

Drain Current(V GS=0)V DS=Max Rating

V DS=Max Rating T j=125o C

1

10

μA

μA

I GSS Gate-body Leakage

Current(V DS=0)

V GS=±20V±100nA ON(?)

Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS=V GS I D=1mA 2.134V R DS(on)Static Drain-source On

Resistance

V GS=10V I D=19A0.030.04?DYNAMIC

Symbol Parameter Test Conditions Min.Typ.Max.Unit

g f s(?)Forward

Transconductance

V DS=15V I D=19A1017S

C iss C os s C rss Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V DS=25V f=1MHz V GS=02100

260

65

pF

pF

pF

SWITCHING

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t d(on) t r t d(of f) t f Turn-on Time

Rise Time

Turn-off Delay Time

Fall Time

V DD=30V I D=18A

R GS=50 ?V GS=10V

40

200

220

110

ns

ns

ns

ns

BUZ11 2/8

ELECTRICAL CHARACTERISTICS(continued)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I SD I SDM Source-drain Current

Source-drain Current

(pulsed)

33

134

A

A

V SD(?)Forward On Voltage I SD=60A V GS=0 1.8V

t rr Q rr Reverse Recovery

Time

Reverse Recovery

Charge

I SD=36A di/dt=100A/μs

V DD=30V T j=150o C

75

0.24

ns

μC

(?)Pulsed:Pulse duration=300μs,duty cycle1.5%

Safe Operating Area Thermal Impedance

BUZ11

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Output Characteristics Transconductance

Gate Charge vs Gate-source Voltage Transfer Characteristics

Static Drain-source On Resistance Capacitance Variations

BUZ11 4/8

Normalized Gate Threshold Voltage vs Temperature

Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature

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Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.2:Unclamped Inductive Waveform Fig.4:Gate Charge test Circuit

Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery Times

BUZ11

6/8

DIM.mm

inch MIN.TYP.

MAX.MIN.TYP.

MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40

2.72

0.094

0.107

D1 1.27

0.050

E 0.490.700.0190.027

F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067

G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.0

10.40

0.393

0.409

L216.4

0.645

L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.

3.75 3.85

0.147

0.151

L6

A

C

D

E

D 1

F

G

L7

L2

Dia.

F 1

L5

L4

H 2

L9

F 2

G 1

TO-220MECHANICAL DATA

P011C

BUZ11

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