MTP3N60中文资料

MTP3N60MTP3N60FI

N -CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

s TYPICAL R DS(on)=2?

s AVALANCHE RUGGED TECHNOLOGY s 100%AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100o C s

APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS s HIGH CURRENT,HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS)s CHOPPER REGULATORS,CONVERTERS,MOTOR CONTROL,LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

TYPE V DSS R DS(on)I D MTP3N60MTP3N60FI

600V 600V

<2.5?<2.5?

3.9A 2.5A

1

2

3

TO-220

ISOWATT220

November 1996ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value

Unit

MTP3N60

MTP3N60FI

V D S Drain-source Voltage (V GS =0)600V V DG R Drain-gate Voltage (R GS =20k ?)600V V GS Gate-source Voltage

±20

V I D Drain Current (continuous)at T c =25o C 3.9 2.5A I D Drain Current (continuous)at T c =100o C 2.4 1.5A I D M (?)Drain Current (pulsed)

1414A P tot Total Dissipation at T c =25o C 10035W Derating Factor

0.80.28W/o C V ISO Insulation Withstand Voltage (DC)

2000

V

T stg Storage Temperature

-65to 150

o C T j

Max.Operating Junction Temperature

150o

C

(?)Pulse width limited by safe operating area

12

3

1/10

THERMAL DATA

TO-220ISOWATT220

R thj-cas e Thermal Resistance Junction-case Max 1.25 3.57o C/W

R thj-amb R t hc-sin k

T l Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

o C/W

o C/W

o C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I A R Avalanche Current,Repetitive or Not-Repetitive

(pulse width limited by T j max,δ <1%)

3.9A

E AS Single Pulse Avalanche Energy

(starting T j=25o C,I D=I AR,V D D=25V)

300mJ

E AR Repetitive Avalanche Energy

(pulse width limited by T j max,δ <1%)

7.7mJ

I A R Avalanche Current,Repetitive or Not-Repetitive

(T c=100o C,pulse width limited by T j max,δ <1%)

2.4A

ELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-source

Breakdown Voltage

I D=250μA V G S=0600V

I DS S Zero Gate Voltage

Drain Current(V GS=0)V DS=Max Rating

V DS=Max Rating x0.8T c=125o C

25

250

μA

μA

I G SS Gate-body Leakage

Current(V D S=0)

V GS=±20V±100nA ON(?)

Symbol Parameter Test Conditions Min.Typ.Max.Unit V G S(th)Gate Threshold Voltage V DS=V GS I D=1mA23 4.5V R DS(on)Static Drain-source On

Resistance

V GS=10V I D=1.5A2 2.5?

I D(on)On State Drain Current V DS>I D(on)x R D S(on)max

V GS=10V

3.9A DYNAMIC

Symbol Parameter Test Conditions Min.Typ.Max.Unit

g fs(?)Forward

Transconductance

V DS>I D(on)x R D S(on)max I D=1.5A 1.5 2.6S

C iss C oss C rss Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V DS=25V f=1MHz V G S=0560

90

40

800

130

55

pF

pF

pF

MTP3N60/FI 2/10

ELECTRICAL CHARACTERISTICS(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t d(on) t r Turn-on Time

Rise Time

V DD=225V I D=2.5A

R G=15?V GS=10V

(see test circuit,figure3)

45

33

60

42

ns

ns

(di/dt)on Turn-on Current Slope V DD=480V I D=4A

R G=15?V GS=10V

(see test circuit,figure5)

200A/μs

Q g Q gs Q gd Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V DD=480V I D=4A V GS=10V43

6

21

55nC

nC

nC

SWITCHING OFF

Symbol Parameter Test Conditions Min.Typ.Max.Unit

t r(Vof f) t f

t c Off-voltage Rise Time

Fall Time

Cross-over Time

V DD=480V I D=4A

R G=15?V GS=10V

(see test circuit,figure5)

35

40

60

45

55

75

ns

ns

ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min.Typ.Max.Unit

I S D I SDM(?)Source-drain Current

Source-drain Current

(pulsed)

3.9

14

A

A

V S D(?)Forward On Voltage I SD=3.9A V GS=02V

t rr Q rr I RRM Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

I SD=4A di/dt=100A/μs

V DD=100V T j=150o C

(see test circuit,figure5)

420

3.7

18

ns

μC

A

(?)Pulsed:Pulse duration=300μs,duty cycle1.5%

(?)Pulse width limited by safe operating area

Safe Operating Areas For TO-220Safe Operating Areas For ISOWATT220

MTP3N60/FI

3/10

Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics

MTP3N60/FI 4/10

MTP3N60/FI Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

Normalized Gate Threshold Voltage vs

Normalized On Resistance vs Temperature Temperature

5/10

MTP3N60/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode Forward Characteristics 6/10

Fig.2:Unclamped Inductive Waveforms

Fig.3:Switching Times Test Circuits For Resistive Load

Fig.4:Gate Charge Test Circuit

Fig.5:Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time

Fig.1:Unclamped Inductive Load Test Circuits

MTP3N60/FI

7/10

DIM.mm

inch MIN.TYP.

MAX.MIN.TYP.

MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.40

2.72

0.094

0.107

D1 1.27

0.050

E 0.490.700.0190.027

F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067

G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.0

10.40

0.393

0.409

L216.4

0.645

L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.

3.75 3.85

0.147

0.151

L6

A

C

D

E

D 1

F

G

L7

L2

Dia.

F 1

L5

L4

H 2

L9

F 2

G 1

TO-220MECHANICAL DATA

P011C

MTP3N60/FI

8/10

DIM.

mm inch MIN.

TYP.

MAX.MIN.TYP.

MAX.A 4.4 4.60.1730.181B 2.5 2.70.0980.106D 2.5 2.750.0980.108E 0.40.70.0150.027F 0.7510.0300.039F1 1.15 1.70.0450.067F2 1.15 1.70.0450.067G 4.95 5.20.1950.204G1 2.4 2.70.0940.106H 10

10.4

0.393

0.409

L216

0.630

L328.630.6 1.126 1.204L49.810.60.3850.417L615.916.40.6260.645L799.30.3540.366?

3 3.2

0.118

0.126

L2

A

B

D

E

H

G

L6

?

F

L3

G 1

123

F 2

F 1

L7

L4

ISOWATT220MECHANICAL DATA

P011G

MTP3N60/FI

9/10

MTP3N60/FI

Information furnished is believed to be accur ate and reliable.Howev er,SGS-THOMSON Microelectronics assumes no respon sability for the consequ enc es of use of such information nor for any infringem ent of paten ts or other rights of third parties which may results from its use.No license is grante d by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelec tronics.Specifications mentioned in this publication are subject to chan ge without notice.This publicat ion superse des and replaces all information previou sly supplie d.

SGS-THOMSON Microelec tronics produ cts are not autho rized for use as critical compone nts in lifesupport devic es or system s without expres s written app roval of SGS-THOMSON Microelectonics.

?1996SGS-THOMSON Microele ctronics-Printed in Italy-All Rights Reserve d

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia-Brazil-Canada-China-France-Germany-Hong Kong-Italy-Japan-Korea-Malays ia-Malta-Morocco-The Netherlands-Singap ore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdo m-U.S.A

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