ma6broch_13jul2005

y h p a r g o h t i L t s

2

U n i v e r s a l F u l l -F i e l d E x p o s u r e A l i g n e r

Features and benefits

■Top /bottom side /infrared alignment ■

Accurate and precise gap setting for higher yield

■

High-quality, diffraction reduction expo-sure optics for high resolution

■Optimum edge quality with thick resist ■Reliable sub-micron printing

■Processing of fragile wafers and pieces ■

High intensity light sources reduce process time

■

High accuracy fixture and fixtureless bond alignment option

■

Aligned cold embossing option for full wafer printing of geometries in nano-meter range

■

Near Field Holography option for one and two dimensional optical gratings ■

For wafers from 2?–150mm

(substrates from 2?i 2? to 6?i 6?)■

Pieces down to a few millimeters

Universal Full-Field Exposure Aligner

The SUSS MA6 Mask Aligner is regarded as the bench-mark in semiconductor submicron research and 3D micro-system production. The innovative system meets customers needs for precision, flexibility and low cost of ownership.

The MA6 enables processes designed for a laboratory environment to be easily transferred to volume SUSS Production Mask Aligners (MA150) because they share key components.

The MA6 is designed for all standard lithography appli-cations. For thick resist MEMS applications the MA6offers high quality exposure optics for high resolution and optimum edge quality. The Bottom Side Alignment option allows for pattern printing on both sides of the substrate. In addition the MA6 offers tailored features for fragile III-V compounds, thinned or warped wafers,transparent substrates, as well as pieces or single dies. The MA6 can be easily retrofitted with a bond aligning option, converting the system to a BA6 for high accu-

racy fixture or fixtureless bond alignment.

E x p o s u r e S y s t e m /A l i g n m e n t

3

L i t h o g r a p h y

Exposure System

Alignment

Top Side Alignment

The MA6 is equipped with a motorized Topside Alignment System providing a high precision align-ment accuracy of ±0.5μm.

Bottom Side Alignment

Especially MEMS applications often need precise top and bottom side alignment. The MA6 can be equipp-ed with bright-field bottom side microscopes, capable of achieving 1μm alignment accuracy. The BSA micro-scope with Single and Splitfield features uses high resolution CCD cameras. The patented image storage and real-time viewing makes alignment more precise and faster than crosshair alignment.

Infrared Alignment

The MA6 can be equipped with an infrared transmitt-ed and/or incident illumination, a practical alignment option where infrared transmission can be used.

Enhanced Image Storage System (EISS)

This PC based system satisfies highest alignment demands. Some of the features offered are SVGA resolutions; electronic brightness and contrast adjust-ment, contrast enhancement, adjustment of bright-ness ratio between stored and live image, etc.

Full Field Exposure

The UV exposure optics of the MA6 offers full field exposure, which means it is capable of exposing the whole wafer in a single shot. The optical setup is optimized for steep wall slopes and high resolution.

Diffraction Reducing Exposure Optics

Diffraction effects at the mask feature edges usually limit the achievable resolution. As the only supplier worldwide SUSS offers a diffraction reducing exposure system, which performs simultaneous exposure with a discrete number of illumination angles that smoothen the printed features. A technology that causes signi-ficant improvement of resolution and yield steep walls.

Exposure Modes

The MA6 handles both proximity and (soft, hard, vacuum) contact printing, allowing for a resolution of 2.5μm in proximity mode and sub-micron in vacuum contact mode. Depending on the optical wavelength.

Wafer Leveling

Accurate leveling of mask and wafer is essential for optimum CD-control. The leveling and gap calibration system of the MA6 is designed to satisfy highest demands regarding accuracy and reliability.

MA6 Resolution

UV400

UV300

UV250

Vacuum Contact 0.7μm 0.5μm <0.5μm 0.6μm*0.4μm*0.3μm*Hard Contact 1.0μm <1.0μm —Soft Contact 2.0μm <2.0μm —Proximity

2.5μm

<2.5μm

—

Achievable resolution depends on wafer size, wafer flatness, resist type, clean room class and, therefore, might vary for different processes. (1μm thick Resist, Lines & Spaces)*Special process conditions

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M A 6 A p p l i c a t i o n s

Near Field Holography

Production of optical, diffractive gratings with the MA6. Near Field Holography (NFH),coupled with mask aligners, offers a cost effective solution to produce gratings as small as 100nm in high volumes.For more information please refer to the SUSS NFH brochure

Submicron Printing

The MA6 is the ideal tool to manufacture integrated circuits. In order to precisely align these small geometries high magnifi-cation is needed. The SUSS AL400 Large Gap Alignment option is capable of providing

a depth of focus up to 400 microns

(average depth of focus for a 20?objective: appr. 3μm).Multiple exposure modes, vacuum contact, and proximity are possible.

Thick Resist /High Topography

Thick resist patterning in high density interconnect and multichip module applications (MCM, CSP)need a higher exposure energy. The MA6 provides high intensity optics which are designed to in-crease throughput by reducing exposure time.The SUSS AL400 Large Gap Alignment option

overcomes the challenge of high topography expo-sure by maintaining a safe working distance from the mask.

MA8

The SUSS MA8 is the system solution for lithography in R &D on substrate sizes up to 200mm. Widely employed in development and pilot production of IC backend processes, the MA8 also pro-vides full laboratory mask aligner versatility and flexibility.

The compatibility of the exposure modes allows processes to be developed on the MA8 which can then be run in production on any of the SUSS MA200 production mask aligners.

For more information please refer to the SUSS MA8 brochure

M A 6 A p p l i c a t i o n s

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L i t h o g r a p h y

UV Embossing or Imprint Lithography

For aligned single- or multi-layer wafer level cold embossing the MA6 Mask Aligner was designed to produce optimal results for single or double sided embossing of micro optical elements.The MA6 is capable of printing resists thickness from <0.1micron to a few 100microns. The structure resolution depends on the imprint stamp itself. In situ top or bottom side alignment and specific UV curing wavelengths can be selected naturally. The polymer Ormocer ?allows a broad variety of possible applications for integrated- and microoptics at relatively low costs.

For more information please refer to the SUSS brochure on Nanoimprinting Lithography

Excimer Laser Option

Excimer lasers offer three very important advantages for deep-UV lithography. The light source does not require any filtering,has a relatively high intensity and provides with ArF the shortest usable wavelength (193nm) besides KrF (248nm).

For more information please refer to the Excimer Laser datasheet

Laser Pre-Bonding

In dual or multiple stack designs for anodic bond appli-cations with high demand on alignment accuracy, the substrates must be secured in their aligned position.Beyond the mechanical clamping tools, the patented laser pre-bonding system from SUSS allows the paired substrates to be quickly and conveniently welded while still on the alignment stage. The prebonded substrates

can then be treated as a single wafer stack and transported to the bonding station. Laser Prebonding is based on the Bond Aligner. By exchanging the standard BSA microscope with the BSA Laser microscope a post bond accuracy of 1μm can be achieved. A unique solution only from SUSS.

For more information please refer to the SUSS laser prebonding datasheet

Direct Bonding

A MA6 can also be configured to be a MA/BA6 providing flexibility as a mask aligner and/or bond aligner. The BA6 is especially de-signed to perform precision alignment of substrates utilizing top

side, back side, intersubstrate or IR illuminated alignment methods. Additionally, the BA6 can be configured to allow room temperature direct (fusion) bonding to be achieved with post bond alignment accuracies of 0.5μm.

For more information see next page

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B o n d A l i g n m e n t

Bond Alignment

Precise bond alignment is indispensable for success-ful high accuracy wafer bonding. The BA6 Bond Aligner precisely aligns all wafers and substrates regardless of the bonding method used. Typical

wafer to wafer alignment methods are either bottom side alignment (BSA) or IR alignment. Both methods use the SUSS enhanced image storage system (EISS) to give best flexibility and accuracy even in large alignment gaps. In case a controlled gap bet-ween the substrates needs to be maintained for a specific bond cycle so called spacers swing between the substrates prior to the clamping sequence.

Transport Fixture

The SUSS bond fixture provides the secure method for keeping the alignment during transfer from aligner to bonder no matter if the wafers are in direct contact or are separated by spacers. During the alignment se-quence the bond fixture is integrated into the alignment system, while the wafers are secured by vacuum clamp-ing. For the transport to the bonding station mechani-cal clamping is used. During the entire bond sequence the fixture remains inside the bond chamber and is afterwards used to unload the bonded wafer stack.

Optimal Alignment is the Key for High Accuracy Wafer Bonding

Cleaning CL200 Cleaner BA6

Bond Aligner SB6e

Substrate Bonder

Aligning Bonding

T e c h n i c a l D a t a

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L i t h o g r a p h y

Mask and Wafer /Substrate

Wafer Size up to 150mm Substrate Size up to 6??6?

Pieces down to <5?5mm Mask Size

SEMI spec,

standard up to 7??7?

Exposure Modes

Contact

soft, hard, low vacuum,vacuum

Proximity

exposure gap 1–300μm

Flood Exposures

Gap Setting Accuracy 1μm Vacuum Contact adjustable to 200mbar abs

Exposure Optics

Resolution (see page 3)

down to 0.4μm

Wavelength Range

UV400350–450nm UV300280–350nm UV250240–260nm Excimer Laser Optics e.g. KrF (248nm) or ArF (193nm)

Exposure Source

Hg lamps 200–1000W (optional 1500W)HgXe lamp 500W Intensity Uniformity

?5%

(?3% 1.5kW lamphouse)

Alignment Methods

Top Side Alignment (TSA); Bottom Side Alignment (BSA); Infrared Alignment (IR)

Dual Focus Alignment System AL400Image Storage Alignment System Accuracy TSA down to 0.5μm BSA down to 1μm Alignment Gap 1–1000μm

Alignment Stage

Movement Range

X:?10mm Y:?5mm ?:?5°

Mechanical Accuracy

0.1μm (step size)

TSA Microscope Stage

Single Field X:?25mm; Y:+25/–75mm Split Field

X:?25mm;

Y:+15/–75mm; ?:?3°X:

optional ?50mm

Topside Microscope TSA

Single Field M500up to 400?Split Field M304up to 375?DVM6up to 750?IRDVM6up to 750?

Objective Magnification 5?, 10?, 20?standard (2.5?, 40?, 5?IR, 10?IR, 20?IR)

Split Field Objective Separation:32–160mm (27–160mm standard objectives w/o turret)

Bottomside Splitfield Microscope BSA

Objective Separation 15–100mm

(68–150mm optional)Movement Range Y:+50/–20mm Magnification up to 90?/290?(switchable)Field of View

0.6?0.8mm 2

(high magnification)

Utilities

Vacuum

<–0.8bar, 200mbar abs Compressed Air 5bar (75psi)Nitrogen

?1bar (15psi)with 350W lamp 0.4m 3/h with 1000W lamp

0.6m 3/h

Power Requirements

Power

Voltage AC 230V Frequency 50–60Hz Consumption with

350W lamp 1500W 500W lamp 2000W 1000W lamp

2600W

Physical Dimensions

H ?W ?D (Mask Aligner)1554?1214?1105mm H ?W ?D (Bond Aligner)1554?1214?1300mm Weight

360–396kg

T echnical Data

Data, design and specification of custom built machines depend on individual process conditions and can vary accord-ing to equipment configurations. Not all specifications may be valid simultaneously. Illustrations in this brochure are not legally binding. SUSS reserves the right to change machine specifications without prior notice.

https://www.sodocs.net/doc/0e17825715.html,

J H /W M · 07/2005

M A 6 · D E · 07/2005 · #1 · 200

0ASIA

SUSS MicroTec KK (Japan)

GITC 1-18-2, Hakusan, Midori-ku

Yokohama, Kanagawa, Japan 226-0006Phone (+81)-45-931-5600Fax (+81)-45-931-5601

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Nanzheng Building Room 606200041 Shanghai PRC Phone (+86) 21-52340432Fax (+86) 21-52340430

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