MAAPGM0042-DIE中文资料
1.2W X/Ku-Band Power Amplifier 11.5-16.0 GHz M A A P G M 0042-D I E
11.5-16.0 GHz GaAs MMIC Amplifier
RO-P-DS-3037-
Preliminary Information
Features
? 11.5-16.0 GHz Operation
? 1.2 Watt Saturated Output Power Level ? Variable Drain Voltage (4-10V) Operation ? Self-Aligned MSAG ? MESFET Process
Primary Applications
? Point-to-Point Radio ? SatCom
? Radio Location
Description
The MAAPGM0042-DIE is a 3-stage 1.2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG ?) MESFET Process. This process features silicon oxynitride passivation and polyimide scratch protection.
Electrical Characteristics: T B = 40°C 1, Z 0 = 50 ?, V DD = 8V, V GG = -2V, P in = 18 dBm
Parameter Symbol
Typical
Units
Bandwidth f 11.5-16.0 GHz
Output Power P OUT 31 dBm
Power Added Efficiency PAE 30 %
1-dB Compression Point P1dB 28 dBm
Small Signal Gain
G
20 dB
VSWR VSWR 1.9:1 Gate Current I GG < 5 mA Drain Current
I DD < 600 mA Output Third Order Intercept
OTOI 35 dBm Noise Figure NF 10 dB 2nd Harmonic 2f -27 dBc
1.2W X/Ku-Band Power Amplifier MAAPGM0042-DIE
1.2W X/Ku-Band Power Amplifier
MAAPGM0042-DIE
010********
10.5
11.5
12.5
13.5
14.5
15.5
16.5
Frequency (GHz)
1.2W X/Ku-Band Power Amplifier
MAAPGM0042-DIE
10
20
30
40
50
1.2W X/Ku-Band Power Amplifier
MAAPGM0042-DIE
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Mechanical Information
Chip Size: 2.980 x 1.980 x 0.075 mm (117 x 78 x 3 mils)
Figure 5. Die Layout
1.2W X/Ku-Band Power Amplifier
MAAPGM0042-DIE
Figure 6. Recommended operational configuration. Wire bond as shown .
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For