IXTH12N100中文资料
Symbol Test Conditions Maximum Ratings
V DSS T J = 25°C to 150°C
1000V V DGR T J = 25°C to 150°C; R GS = 1 M ?1000V V GS Continuous ±20V V GSM Transient ±30V I D25T C
= 25°C
10N10010
A 12N10012A I DM T C = 25°C, pulse width limited by T JM 10N10040A 12N100
48A P D T C = 25°C
300
W T J -55 ... +150
°C T JM 150
°C T stg -55 ... +150
°C
M d Mounting torque 1.13/10Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300
°C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
MegaMOS TM FET
N-Channel Enhancement Mode
TO-204 AA (IXTM)
V DSS I D25R DS(on)IXTH / IXTM 10N1001000 V 10 A 1.20 ?IXTH / IXTM 12N100
1000 V
12 A
1.05 ?
G = Gate, D = Drain,S = Source,
TAB = Drain
G
Symbol Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.typ.max.
V DSS V GS = 0 V, I D = 3 mA 1000
V
V GS(th)V DS = V GS , I D = 250 μA 2
4.5V I GSS V GS = ±20 V DC , V DS = 0±100
nA I DSS V DS = 0.8 ? V DSS T J = 25°C 250μA V GS = 0 V
T J = 125°C
1mA R DS(on)
V GS = 10 V, I D = 0.5 I D25
10N100 1.20?12N100
1.05
?
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
91540E(5/96)
Features
l International standard packages l Low R DS (on) HDMOS TM process
l Rugged polysilicon gate cell structure l
Low package inductance (< 5 nH)-easy to drive and to protect l
Fast switching times
Applications
l
Switch-mode and resonant-mode power supplies l
Motor controls
l Uninterruptible Power Supplies (UPS)l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)(isolated mounting screw hole)l Space savings l
High power density
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions
Characteristic Values
(T
= 25°C, unless otherwise specified)
T J - Degrees C
-50
-250255075100125150
B V /V G (t h ) - N o r m a l i z e d
0.50.6
0.70.80.91.01.1
1.2BV DSS
V GS(th)
T C - Degrees C -50
-250
25
50
75
100125150
I D - A m p e r e s
0246810121416
18
20T J - Degrees C
-50
-25
25
50
75
100125150
R D S (o n ) - N o r m a l i z e d
0.50
0.751.001.251.501.752.002.25
2.50I D - Amperes 0
5
10
15
20
25
R D S (o n ) - N o r m a l i z e d
0.9
1.01.11.21.31.4
1.5
V GS - Volts
012345678910
I D - A m p e r e s
2468101214161820V DS - Volts 05101520
I D - A m p e r e s
24681012141618206V
7V V GS = 10V
5V
T J = 25°C
Fig. 1Output Characteristics
Fig. 2Input Admittance
Fig. 3R DS(on) vs. Drain Current
Fig. 4Temperature Dependence
of Drain to Source Resistance
Fig. 5Drain Current vs.
Fig. 6Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
Fig.7Gate Charge Characteristic Curve
Fig.8Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9Capacitance Curves
Fig.10Source Current vs. Source
to Drain Voltage
V DS - Volts
1
10
100
1000
I D - A m p e r e s
0.1
1
10Gate Charge - nCoulombs
25
50
75
100
125
150
V G S - V o l t s
01234567
8910V SD - Volts
0.0
0.20.40.60.8 1.0 1.2 1.4
I D - A m p e r e s
02
468101214161820V DS - Volts 0
5
101520
C a p a c i t a n c e - p F
050010001500200025003000
3500
40004500Time - Seconds
0.00001
0.00010.0010.010.1110
T h e r m a l R e s p o n s e - K /W
0.001
0.010.11
C rss
C oss C iss
f = 1MHz V DS = 25V